公开(公告)号：US07629227B1

公开(公告)日：2009-12-08

申请号：US11925514

申请日：2007-10-26

Applicant: Feng Wang ,  Victor Y. Lu ,  Brian Lu ,  Wai-Fan Yau ,  Nerissa Draeger

Inventor： Feng Wang ,  Victor Y. Lu ,  Brian Lu ,  Wai-Fan Yau ,  Nerissa Draeger

IPC: H01L21/76

CPC classification number: H01L21/76224

Abstract: Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

Abstract translation: 提供了通过产生可流动的含氧化硅膜在衬底上衬里和/或填充间隙的方法。 所述方法包括将气相含硅前体和氧化剂反应物引入含有基材的反应室中，使得在基材上形成冷凝的可流动的膜。 可流动膜至少部分地填充衬底上的间隙，然后转换成氧化硅膜。 在某些实施方案中，所述方法包括在形成膜中使用催化剂，例如亲核试剂或鎓催化剂。 催化剂可以并入到一种反应物中和/或作为单独的反应物引入。 还提供了将可流动膜转化为固体电介质膜的方法。 本发明的方法可用于对高纵横比间隙进行线或填充，包括具有3:1至10:1的纵横比的间隙。

公开(公告)号：US07381442B2

公开(公告)日：2008-06-03

申请号：US10507411

申请日：2002-04-10

Applicant: Victor Y. Lu ,  Roger Y. Leung ,  Eric Deng ,  Songyuan Xie

Inventor： Victor Y. Lu ,  Roger Y. Leung ,  Eric Deng ,  Songyuan Xie

IPC: B05D3/02

CPC classification number: C08J9/26 ,  C08J2201/046 ,  C08J2383/04 ,  C09D183/02 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10T428/249953

Abstract: The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.

Abstract translation: 本发明涉及纳米多孔二氧化硅介电膜的制造以及包括这些改进膜的半导体器件和集成电路。 使用含硅预聚物制备本发明的纳米多孔膜，并且通过允许通过无金属离子的鎓或亲核试剂催化剂在较低凝胶温度下进行交联的方法制备。

公开(公告)号：US08187951B1

公开(公告)日：2012-05-29

申请号：US12625468

申请日：2009-11-24

Applicant: Feng Wang ,  Victor Y. Lu ,  Brian Lu ,  Wai-Fan Yau ,  Nerissa Draeger

Inventor： Feng Wang ,  Victor Y. Lu ,  Brian Lu ,  Wai-Fan Yau ,  Nerissa Draeger

IPC: H01L21/76

CPC classification number: H01L21/76224

Abstract: Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

Abstract translation: 提供了通过产生可流动的含氧化硅膜在衬底上衬里和/或填充间隙的方法。 所述方法包括将气相含硅前体和氧化剂反应物引入含有基材的反应室中，使得在基材上形成冷凝的可流动的膜。 可流动膜至少部分地填充衬底上的间隙，然后转换成氧化硅膜。 在某些实施方案中，所述方法包括在形成膜中使用催化剂，例如亲核试剂或鎓催化剂。 催化剂可以并入到一种反应物中和/或作为单独的反应物引入。 还提供了将可流动膜转化为固体电介质膜的方法。 本发明的方法可以用于线或填充高纵横比间隙，包括具有3:1至10:1的纵横比的间隙。

公开(公告)号：US07888273B1

公开(公告)日：2011-02-15

申请号：US11834581

申请日：2007-08-06

Applicant: Feng Wang ,  Victor Y. Lu ,  Brian Lu ,  Wai-Fan Yau

Inventor： Feng Wang ,  Victor Y. Lu ,  Brian Lu ,  Wai-Fan Yau

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76224

Abstract: Multi-cycle methods result in dense, seamless and void-free dielectric gap fill are provided. The methods involve forming liquid or flowable films that partially fill a gap, followed by a solidification and/or anneal process that uniformly densifies the just-formed film. The thickness of the layer formed is such that the subsequent anneal process creates a film that does not have a density gradient. The process is then repeated as necessary to wholly or partially fill or line the gap as desired. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios greater than about 6:1 with widths less than about 0.13 μm.

Abstract translation: 多循环方法可提供密集，无缝隙和无空隙的电介质间隙填充。 所述方法包括形成部分填充间隙的液体或可流动膜，随后进行均匀地致密刚形成膜的凝固和/或退火工艺。 所形成的层的厚度使得随后的退火工艺产生不具有密度梯度的膜。 然后根据需要重复该过程以根据需要完全或部分填充或排列间隙。 本发明的方法可用于对高纵横比间隙进行排列或填充，包括具有大于约6:1的纵横比的间隙，宽度小于约0.13μm。

公开(公告)号：US07381441B2

公开(公告)日：2008-06-03

申请号：US10507410

申请日：2002-04-10

Applicant: Roger Y. Leung ,  Eric Deng ,  Songyuan Xie ,  Victor Y. Lu

Inventor： Roger Y. Leung ,  Eric Deng ,  Songyuan Xie ,  Victor Y. Lu

IPC: B05D3/02

CPC classification number: C08J9/26 ,  C08J2201/046 ,  C08J2383/04 ,  C09D183/02 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10T428/249953

Abstract: The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.

Abstract translation: 本发明涉及纳米多孔二氧化硅介电膜的制造以及包括这些改进膜的半导体器件和集成电路。 使用含硅预聚物制备本发明的纳米多孔膜，并且通过允许通过无金属离子的鎓或亲核试剂催化剂在较低凝胶温度下进行交联的方法制备。