公开(公告)号：US5187547A

公开(公告)日：1993-02-16

申请号：US616768

申请日：1990-11-19

申请人： Tatsuhiko Niina ,  Kiyoshi Ohta ,  Toshitake Nakata ,  Yasuhiko Matsushita ,  Takahiro Uetani ,  Yoshiharu Fujikawa

发明人： Tatsuhiko Niina ,  Kiyoshi Ohta ,  Toshitake Nakata ,  Yasuhiko Matsushita ,  Takahiro Uetani ,  Yoshiharu Fujikawa

IPC分类号： H01L33/00 ,  H01L33/20 ,  H01L33/34 ,  H01L33/40 ,  H01L33/44

CPC分类号： H01L33/44 ,  H01L33/0054 ,  H01L33/20 ,  H01L33/343 ,  H01L33/40 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/12041

摘要： A light emitting diode device comprises an n type silicon carbide substrate having first and second major surfaces opposite to each other at least inclined at a predetermined angle not less than 3.degree. from a {0001} plane, an n type silicon carbide layer grown on the first major surface, a p type silicon carbide layer grown on the n type silicon carbide layer, a p type ohmic electrode formed on a partial area of the p type silicon carbide layer, and an n type ohmic electrode formed on a partial area of the second major surface. The diode element has a substantially trapezoidal form in a cross section orthogonal to the first major surface. The diode element has the side of the p type silicon carbide layer broader than the side of the second major surface and is supported at the side of the type silicon carbide layer fixed to a supporting stem.

摘要翻译： 一种发光二极管器件包括n型碳化硅衬底，其具有彼此相对的第一和第二主表面，至少从{0001}面倾斜到不小于3°的预定角度，n型碳化硅层在 在n型碳化硅层上生长的第一主表面，ap型碳化硅层，形成在p型碳化硅层的局部区域上的p型欧姆电极，以及形成在第二主要部分区域上的n型欧姆电极 表面。 二极管元件在与第一主表面正交的横截面中具有基本上梯形的形式。 二极管元件的p型碳化硅层的侧面比第二主表面的侧面宽，并且被支撑在固定在支撑杆上的碳化硅层的侧面。