SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, AND PATTERN FORMING METHOD
    3.
    发明申请
    SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, AND PATTERN FORMING METHOD 有权
    含硅成膜组合物,含硅膜和图案形成方法

    公开(公告)号:US20100233632A1

    公开(公告)日:2010-09-16

    申请号:US12722529

    申请日:2010-03-12

    IPC分类号: G03F7/20 C08L83/04

    摘要: A silicon-containing film-forming composition includes a polysiloxane and organic solvent. The polysiloxane includes a first structural unit, a second structural unit, and a third structural unit. The first structural unit is derived from a tetraalkoxysilane. The second structural unit is derived from a compound shown by a formula (1), wherein R1 represents a hydrogen atom or an electron-donating group, at least one R1 is an electron-donating group, R2 represents a monovalent organic group, and n represents 0 or 1. The third structural unit is derived from a compound shown by a formula (2), wherein R3 represents an alkyl group having 1 to 8 carbon atoms, and R4 represents a monovalent organic group.

    摘要翻译: 含硅膜组合物包含聚硅氧烷和有机溶剂。 聚硅氧烷包括第一结构单元,第二结构单元和第三结构单元。 第一结构单元衍生自四烷氧基硅烷。 第二结构单元衍生自式(1)所示的化合物,其中R1表示氢原子或给电子基团,至少一个R 1是给电子基团,R 2表示一价有机基团,n 表示0或1.第三结构单元衍生自式(2)所示的化合物,其中R 3表示具有1至8个碳原子的烷基,R 4表示一价有机基团。