公开(公告)号：US07678657B1

公开(公告)日：2010-03-16

申请号：US11591850

申请日：2006-11-02

Applicant: Todd Patrick Thibeault ,  Steven J. Adler ,  Scott David Ruby

Inventor： Todd Patrick Thibeault ,  Steven J. Adler ,  Scott David Ruby

IPC: H01L21/44

CPC classification number: H01L21/8249

Abstract: A system and method are disclosed for manufacturing an emitter structure in a complementary bipolar complementary metal oxide semiconductor (CBiCMOS) transistor manufacturing process. A protective layer is formed over an emitter layer in a transistor structure and lateral portions of the protective layer and the emitter layer are etched to form an emitter structure. An oxide layer is then deposited over the transistor structure and an etchback process is performed to remove portions of the oxide layer from the top of the protective layer. A source/drain implant process is then performed to implant an extrinsic base region of the transistor. The protective layer protects the emitter structure from the implant process. Then the protective layer is removed from the emitter structure.

Abstract translation: 公开了用于制造互补双极互补金属氧化物半导体（CBiCMOS）晶体管制造工艺中的发射极结构的系统和方法。 在晶体管结构中的发射极层上形成保护层，并且保护层和发射极层的横向部分被蚀刻以形成发射极结构。 然后在晶体管结构上沉积氧化物层，并且执行回蚀工艺以从保护层的顶部去除氧化物层的部分。 然后执行源极/漏极注入工艺以注入晶体管的外部基极区域。 保护层保护发射器结构免受植入过程的影响。 然后从发射器结构去除保护层。

公开(公告)号：US07247544B1

公开(公告)日：2007-07-24

申请号：US10121242

申请日：2002-04-12

Applicant: Sergei Drizlikh ,  Todd Patrick Thibeault ,  Thomas Francis

Inventor： Sergei Drizlikh ,  Todd Patrick Thibeault ,  Thomas Francis

IPC: H01L21/76

CPC classification number: H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In an inductor integration process, a high Q inductor is achieved by forming an AlCu inductor via prior to depositing the inductor dielectric.

Abstract translation: 在电感器集成过程中，通过在沉积电感器电介质之前形成AlCu电感器来实现高Q电感。