公开(公告)号：US5505158A

公开(公告)日：1996-04-09

申请号：US334088

申请日：1994-11-04

Applicant: Thomas P. Thorpe, Jr. ,  Ronald A. Weimer

Inventor： Thomas P. Thorpe, Jr. ,  Ronald A. Weimer

IPC: C30B25/02 ,  C30B25/14

CPC classification number: C30B25/02 ,  C30B29/04

Abstract: A novel apparatus and method for the cyclic growth-etch deposition of diamond on a substrate by flame chemical vapor deposition (CVD) is developed. The cyclic growth-etch diamond deposition is accomplished by placing a suitable substrate to be coated under a CVD flame and providing a disk or face plate or other shapes having one or more teeth (or holes) wherein upon rotation of the disk, or face plate, or other shape, the teeth attached to the disk, or face plate, or other shape obstruct the path of the CVD flame from contacting the substrate at a desired time scale of .tau..sub.growth and t.sub.cycle to produce high quality (FWHM of 1-3.5 cm.sup.-1) diamond.

Abstract translation: 开发了通过火焰化学气相沉积（CVD）在金属基体上循环生长蚀刻沉积金刚石的新型设备和方法。 循环生长蚀刻金刚石沉积通过将待涂覆的合适基底放置在CVD火焰下并提供具有一个或多个齿（或孔）的盘或面板或其它形状，其中在圆盘或面板 或其他形状，附着到盘或面板或其它形状的牙齿阻碍CVD火焰的路径以期望的时间尺度的tau生长和tcycle与基底接触以产生高质量（FWHM为1-3.5 厘米-1）金刚石。