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公开(公告)号：US07443090B2
公开(公告)日：2008-10-28
申请号：US11237637
申请日：2005-09-28
申请人： Michael W. Geis , Theodore H. Fedynyshyn , Sandra J. Deneault , Keith E. Krohn , Theodore M. Lyszczarz , Michael F. Marchant
发明人： Michael W. Geis , Theodore H. Fedynyshyn , Sandra J. Deneault , Keith E. Krohn , Theodore M. Lyszczarz , Michael F. Marchant
IPC分类号： H01J1/00
摘要： A surface-emission cathode formed on an insulating surface having cantilevered, i.e. “undercut,” electrodes. Suitable insulating surfaces include negative electron affinity (NEA) insulators such as glass or diamond. The cathode can operate in a comprised vacuum (e.g., 10−7 Torr) with no bias on the electrodes and low vacuum electric fields (e.g., at least 10 V cm−1). Embodiments of the present invention are inexpensive to fabricate, requiring lithographic resolution of approximately 10 micrometers. These cathodes can be formed over large areas for use in lighting and displays and are suitable for satellite applications, such as cathodes for tethers, thrusters and space-charging neutralizers.
摘要翻译： 形成在具有悬臂的绝缘表面上的表面发射阴极，即“底切”电极。 合适的绝缘表面包括负电子亲和力（NEA）绝缘体，如玻璃或金刚石。 阴极可以在电极和低真空电场（例如，至少10V cm -1 -1以上）没有偏压的情况下在包含的真空（例如，10 -7托）中操作 >）。 本发明的实施例制造成本低廉，需要约10微米的光刻分辨率。 这些阴极可以形成在用于照明和显示器的大面积上，并且适用于卫星应用，例如系绳阴极，推进器和空间充电中和剂。
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2.发明授权
公开(公告)号：US5713775A
公开(公告)日：1998-02-03
申请号：US432848
申请日：1995-05-02
CPC分类号： H01J9/025 , H01J1/3042 , H01J2201/30457
摘要： Improved field-emission devices are based on composing the back contact to the emitter material such that electron-injection efficiency into the emitter material is enhanced. Alteration of the emitter material structure near the contact or geometric field enhancement due to contact morphology gives rise to the improved injection efficiency. The devices are able to emit electrons at high current density and lower applied potential differences and temperatures than previously achieved. Wide-bandgap emitter materials without shallow donors benefit from this approach. The emission characteristics of diamond substitutionally doped with nitrogen, having a favorable emitter/vacuum band structure but being limited by the efficiency of electron injection into it, show especial improvement in the context of the invention. The injection-enhancing contacts can be created by combining the emitter material with an appropriate metal compound and annealing or by conventional dry anisotropic etching or ion bombardment techniques.
摘要翻译： 改进的场致发射器件基于构成与发射极材料的背接触，使得增加到发射极材料中的电子注入效率。 由接触形态引起的接触或几何场增强附近的发射极材料结构的改变提高了注入效率的提高。 器件能够以高电流密度发射电子，并且能够比以前实现的更低的施加电位差和温度。 没有浅供体的宽带隙发射体材料受益于这种方法。 替代地掺杂有氮的金刚石的发射特性具有良好的发射极/真空带结构但被电子注入的效率所限制，在本发明的上下文中显示出特别的改进。 注入增强触点可以通过将发射极材料与适当的金属化合物组合并进行退火或通过常规的干各向异性蚀刻或离子轰击技术来产生。
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3.发明申请System and method for providing a high frequency response silicon photodetector 有权提供高频响应硅光电探测器的系统和方法公开(公告)号：US20100025787A1
公开(公告)日：2010-02-04
申请号：US11541975
申请日：2006-10-02
申请人： Michael W. Geis , Steven J. Spector , Donna M. Lennon , Matthew E. Grein , Robert T. Schulein , Jung U. Yoon , Franz Xaver Kaertner , Fuwan Gan , Theodore M. Lyszczarz
发明人： Michael W. Geis , Steven J. Spector , Donna M. Lennon , Matthew E. Grein , Robert T. Schulein , Jung U. Yoon , Franz Xaver Kaertner , Fuwan Gan , Theodore M. Lyszczarz
IPC分类号： H01L31/0352 , H01L21/30 , H01L31/0232
CPC分类号： H01L27/144 , H01L31/102
摘要： A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.
摘要翻译： 硅光电检测器包含具有顶表面和底表面的绝缘基底。 硅层位于绝缘基板的顶表面上，其中硅层包含中心区域，中心区域的厚度大于硅层的其余部分。 顶部二氧化硅层位于中心区域的顶表面上。 中心区域的左翼和中心区域的右翼被掺杂。 硅光电探测器还具有位于中心区域内的有源区域，其中有源区域包含定制的晶体缺陷 - 杂质组合和氧原子。
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公开(公告)号：US4618261A
公开(公告)日：1986-10-21
申请号：US570918
申请日：1984-01-16
CPC分类号： G03F9/7026 , G01B11/14 , G03F9/7049
摘要： A lens or fiberoptic cable focuses energy from a collimated helium neon laser beam upon a point on a mask. Some of the focused energy is reflected from the mask upon a photodetector array in an image plane, and some of this energy is reflected from a substrate closely adjacent to the mask after passing through the mask upon the photodetector array to produce an interference pattern that is sensed and characterized by a spatial frequency representative of the distance between the mask and substrate.
摘要翻译： 透镜或光纤电缆将来自准直的氦氖激光束的能量聚焦在掩模上的点上。 一些聚焦能量从掩模在图像平面中的光电检测器阵列上被反射，并且这些能量中的一些在通过光电检测器阵列上的掩模之后从与掩模紧密相邻的基板反射，以产生干涉图案， 感测并表征为代表掩模和衬底之间的距离的空间频率。
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公开(公告)号：US08818150B2
公开(公告)日：2014-08-26
申请号：US11731338
申请日：2007-03-30
申请人： Matthew E. Grein , Theodore M. Lyszczarz , Michael W. Geis , Steven J. Spector , Donna M. Lennon , Yoon Jung
发明人： Matthew E. Grein , Theodore M. Lyszczarz , Michael W. Geis , Steven J. Spector , Donna M. Lennon , Yoon Jung
IPC分类号： G02B6/26
CPC分类号： G02F1/025 , B82Y20/00 , G02F1/0136
摘要： Method and apparatus for modulation of both the intensity and the polarization of radiation in silicon waveguides by applying a biasing voltage to the waveguide.
摘要翻译： 通过向波导施加偏置电压来调制硅波导中的辐射的强度和极化两者的方法和装置。
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6.发明授权System and method for providing a high frequency response silicon photodetector 有权提供高频响应硅光电探测器的系统和方法公开(公告)号：US07880204B2
公开(公告)日：2011-02-01
申请号：US11541975
申请日：2006-10-02
申请人： Michael W. Geis , Steven J. Spector , Donna M. Lennon , Matthew E. Grein , Robert T. Schulein , Jung U. Yoon , Franz Xaver Kaertner , Fuwan Gan , Theodore M. Lyszczarz
发明人： Michael W. Geis , Steven J. Spector , Donna M. Lennon , Matthew E. Grein , Robert T. Schulein , Jung U. Yoon , Franz Xaver Kaertner , Fuwan Gan , Theodore M. Lyszczarz
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/144 , H01L31/102
摘要： A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.
摘要翻译： 硅光电检测器包含具有顶表面和底表面的绝缘基底。 硅层位于绝缘基板的顶表面上，其中硅层包含中心区域，中心区域的厚度大于硅层的其余部分。 顶部二氧化硅层位于中心区域的顶表面上。 中心区域的左翼和中心区域的右翼被掺杂。 硅光电探测器还具有位于中心区域内的有源区域，其中有源区域包含定制的晶体缺陷 - 杂质组合和氧原子。
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公开(公告)号：US5990604A
公开(公告)日：1999-11-23
申请号：US17361
申请日：1998-02-02
CPC分类号： H01J9/025 , H01J1/3042 , H01J2201/30457
摘要： Improved field-emission devices are based on composing the back contact to the emitter material such that electron-injection efficiency into the emitter material is enhanced. Alteration of the emitter material structure near the contact or geometric field enhancement due to contact morphology gives rise to the improved injection efficiency. The devices are able to emit electrons at high current density and lower applied potential differences and temperatures than previously achieved. Wide-bandgap emitter materials without shallow donors benefit from this approach. The emission characteristics of diamond substitutionally doped with nitrogen, having a favorable emitter/vacuum band structure but being limited by the efficiency of electron injection into it, show especial improvement in the context of the invention. The injection-enhancing contacts can be created by combining the emitter material with an appropriate metal compound and annealing or by conventional dry anisotropic etching or ion bombardment techniques.
摘要翻译： 改进的场致发射器件基于构成与发射极材料的背接触，使得增加到发射极材料中的电子注入效率。 由接触形态引起的接触或几何场增强附近的发射极材料结构的改变提高了注入效率的提高。 器件能够以高电流密度发射电子，并且能够比以前实现的更低的施加电位差和温度。 没有浅供体的宽带隙发射体材料受益于这种方法。 替代地掺杂有氮的金刚石的发射特性具有良好的发射极/真空带结构但被电子注入的效率所限制，在本发明的上下文中显示出特别的改进。 注入增强触点可以通过将发射极材料与适当的金属化合物组合并进行退火或通过常规的干各向异性蚀刻或离子轰击技术来产生。
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公开(公告)号：US5729094A
公开(公告)日：1998-03-17
申请号：US632026
申请日：1996-04-15
CPC分类号： H01J1/304
摘要： An energetic-electron emitter providing electrons having kinetic energies on the order of one thousand electron volts without acceleration through vacuum. An average electric field of 10.sup.5 V/m to 10.sup.10 V/m applied across a layer of emissive cathode material accelerates electrons inside the layer. The cathode material is a high-dielectric strength, rigid-structure, wide-bandgap semiconductors, especially type Ib diamond. A light-emitting device incorporates the energetic-electron emitter as a source of excitation to luminescence.
摘要翻译： 能量电子发射体提供具有一千电子伏特的动能的电子，而没有加速通过真空。 施加在发射阴极材料层上的105V / m至1010V / m的平均电场加速层内的电子。 阴极材料是高介电强度，刚性结构的宽带隙半导体，特别是Ib型金刚石。 发光装置将能量 - 电子发射体作为激发源发光。
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公开(公告)号：US20100089443A1
公开(公告)日：2010-04-15
申请号：US12566278
申请日：2009-09-24
IPC分类号： H01L31/0256 , H01L31/0236 , H01L31/0216 , H01L31/18
CPC分类号： H01L51/447 , H01L31/0236 , H01L51/0096 , H01L51/4246 , Y02E10/549
摘要： Methods, devices, and compositions related to organic solar cells, sensors, and other photon processing devices are disclosed. In some aspects, an organic semiconducting composition is formed with nano-sized features, e.g., a layer conforming to a shape exhibiting nano-sized tapered features. Such structures can be formulated as an organic n-type and/or an organic p-type layer incorporated in a device that exhibits enhanced conductor mobility relative to conventional structures such as planar layered formed organic semiconductors. The nanofeatures can be formed on an exciton blocking layer (“EBL”) surface, with an organic semiconducting layer deposited thereon to conform with the EBL's surface features. A variety of material possibilities are disclosed, as well as a number of different configurations. Such organic structures can be used to form flexible solar cells in a roll-out format.
摘要翻译： 公开了与有机太阳能电池，传感器和其他光子处理装置有关的方法，装置和组合物。 在一些方面，有机半导体组合物形成有纳米尺寸的特征，例如符合呈纳米尺寸锥形特征的形状的层。 这种结构可以配制成结合在相对于常规结构如平面层状形成的有机半导体的表现出增强的导体迁移率的器件中的有机n型和/或有机p型层。 纳米尺度可以在激子阻挡层（“EBL”）表面上形成，其上沉积有机半导体层以符合EBL的表面特征。 公开了各种材料的可能性，以及许多不同的配置。 这种有机结构可用于以滚出格式形成柔性太阳能电池。
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公开(公告)号：US5973451A
公开(公告)日：1999-10-26
申请号：US794361
申请日：1997-02-04
申请人： Michael W. Geis , Nickolai N. Efremow , Kevin E. Krohn , Jonathan C. Twichell , Theodore M. Lyszczarz
发明人： Michael W. Geis , Nickolai N. Efremow , Kevin E. Krohn , Jonathan C. Twichell , Theodore M. Lyszczarz
IPC分类号： H01J1/30
CPC分类号： H01J1/30
摘要： The surface-emission cathodes of the invention are constructed so that the cathode body has a free surface over which electrons are efficiently accelerated after injection from a conductive contact. The junction between the free surface and the contact has the property that the height of the barrier to tunneling from the contact to floating surface states associated with the free surface of the cathode body is lower than both the barrier to emission from the contact to vacuum and the barrier to injection from the contact into the conduction band of the cathode body material. Thus under an applied potential, electrons are injected from the contact into floating surface states associated with the free surface. After acceleration, electrons leave the free surface, either emitted to vacuum or injected into another medium.
摘要翻译： 本发明的表面发射阴极被构造成使得阴极体具有自由表面，电子在从导电接触点注入之后被有效地加速。 自由表面和接触之间的接合点具有这样的特性，即从接触到与阴极体的自由表面相关联的浮动表面状态的穿透的屏障的高度低于从接触到真空的发射屏障， 从触点注入阴极体材料的导带的阻挡层。 因此，在施加电位下，电子从触点注入与自由表面相关的浮动表面状态。 加速后，电子离开自由表面，发射到真空或注入另一种介质。
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