公开(公告)号：US20130288880A1

公开(公告)日：2013-10-31

申请号：US13884636

申请日：2011-11-10

申请人： Tatsuya Hinoki ,  Yi-Hyun Park

发明人： Tatsuya Hinoki ,  Yi-Hyun Park

IPC分类号： C04B35/575

CPC分类号： C04B35/575 ,  B32B18/00 ,  C04B35/565 ,  C04B35/573 ,  C04B35/645 ,  C04B35/806 ,  C04B38/0032 ,  C04B38/068 ,  C04B2111/28 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3826 ,  C04B2235/383 ,  C04B2235/3834 ,  C04B2235/422 ,  C04B2235/5244 ,  C04B2235/5264 ,  C04B2235/614 ,  C04B2235/616 ,  C04B2235/662 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/365 ,  C04B2237/38 ,  G21B1/13 ,  G21C7/10 ,  G21C15/00 ,  G21C17/017 ,  H05H2001/4695 ,  Y02E30/128 ,  C04B38/0074

摘要： A SiC ceramic material includes a bundle of SiC continuous fibers in a porous SiC ceramic matrix, has thermal insulation properties, a high level of strength and a high degree of toughness. A SiC ceramic structure is made of the SiC ceramic material. It is produced by preparing a pressure-sintered compact using a slurry prepared by mixing SiC powder and carbon powder in a liquid and by gasifying and releasing the carbon powder. The SiC ceramic structure can be produced by heating a reaction preparation containing a bundle of SiC continuous fibers and Si powder to a temperature equal to or higher than the melting point of silicon causing a reaction of the carbon component and Si powder and thereby obtaining a reaction-sintered compact, and by gasifying and releasing the carbon component from the reaction-sintered compact. The SiC ceramic can be produced by a chemical vapor deposition method.

摘要翻译： SiC陶瓷材料在多孔SiC陶瓷基体中包括一束SiC连续纤维，具有绝热性能，高水平的强度和高韧性。 SiC陶瓷结构由SiC陶瓷材料制成。 通过使用通过将SiC粉末和碳粉末混合在液体中并通过气化和释放碳粉而制备的浆料来制备压力烧结体。 SiC陶瓷结构体可以通过将包含一束SiC连续纤维和Si粉末的反应制剂加热至硅的熔点以上的温度，从而引起碳成分与Si粉末的反应，从而得到反应 并且通过从反应烧结体中气化和释放碳组分。 SiC陶瓷可以通过化学气相沉积法制造。

公开(公告)号：US09353013B2

公开(公告)日：2016-05-31

申请号：US13884636

申请日：2011-11-10

申请人： Tatsuya Hinoki ,  Yi-Hyun Park

发明人： Tatsuya Hinoki ,  Yi-Hyun Park

IPC分类号： C04B35/575 ,  C04B35/565 ,  B32B18/00 ,  C04B35/573 ,  C04B35/645 ,  C04B35/80 ,  C04B38/00 ,  C04B38/06 ,  G21B1/13 ,  C04B111/28 ,  G21C7/10 ,  G21C15/00 ,  G21C17/017 ,  H05H1/46

CPC分类号： C04B35/575 ,  B32B18/00 ,  C04B35/565 ,  C04B35/573 ,  C04B35/645 ,  C04B35/806 ,  C04B38/0032 ,  C04B38/068 ,  C04B2111/28 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3826 ,  C04B2235/383 ,  C04B2235/3834 ,  C04B2235/422 ,  C04B2235/5244 ,  C04B2235/5264 ,  C04B2235/614 ,  C04B2235/616 ,  C04B2235/662 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/365 ,  C04B2237/38 ,  G21B1/13 ,  G21C7/10 ,  G21C15/00 ,  G21C17/017 ,  H05H2001/4695 ,  Y02E30/128 ,  C04B38/0074

摘要： A SiC ceramic material includes a bundle of SiC continuous fibers in a porous SiC ceramic matrix, has thermal insulation properties, a high level of strength and a high degree of toughness. A SiC ceramic structure is made of the SiC ceramic material. It is produced by preparing a pressure-sintered compact using a slurry prepared by mixing SiC powder and carbon powder in a liquid and by gasifying and releasing the carbon powder. The SiC ceramic structure can be produced by heating a reaction preparation containing a bundle of SiC continuous fibers and Si powder to a temperature equal to or higher than the melting point of silicon causing a reaction of the carbon component and Si powder and thereby obtaining a reaction-sintered compact, and by gasifying and releasing the carbon component from the reaction-sintered compact. The SiC ceramic can be produced by a chemical vapor deposition method.

摘要翻译： SiC陶瓷材料在多孔SiC陶瓷基体中包括一束SiC连续纤维，具有绝热性能，高水平的强度和高韧性。 SiC陶瓷结构由SiC陶瓷材料制成。 通过使用通过将SiC粉末和碳粉末混合在液体中并通过气化和释放碳粉而制备的浆料来制备压力烧结体。 SiC陶瓷结构体可以通过将包含一束SiC连续纤维和Si粉末的反应制剂加热至硅的熔点以上的温度，从而引起碳成分与Si粉末的反应，从而得到反应 并且通过从反应烧结体中气化和释放碳组分。 SiC陶瓷可以通过化学气相沉积法制造。