Abstract:
The use of at least one diazonium salt bearing an initiator function, for forming an undercoat obtained by grafting a graft derived from the diazonium salt and bearing an initiator function at the surface of a conductive or semiconductive material on the undercoat, and for forming on the undercoat a polymeric layer obtained by polymerization, in particular free radical polymerization, in situ of at least one monomer, initiated from the initiator function.
Abstract:
The invention concerns the use of at least one diazonium salt bearing an initiator function, for forming an undercoat obtained by grafting a graft derived from said diazonium salt and bearing an initiator function at the surface of a conductive or semiconductive material on said undercoat, and for forming on said undercoat a polymeric layer obtained by polymerization, in particular free radical polymerization, in situ of at least one monomer, initiated from said initiator function.
Abstract:
The use of at least one diazonium salt bearing an initiator function, for forming an undercoat obtained by grafting a graft derived from the diazonium salt and bearing an initiator function at the surface of a conductive or semiconductive material on the undercoat, and for forming on the undercoat a polymeric layer obtained by polymerization, in particular free radical polymerization, in situ of at least one monomer, initiated from the initiator function.
Abstract:
The use of at least one diazonium salt bearing an initiator function, for forming an undercoat obtained by grafting a graft derived from the diazonium salt and bearing an initiator function at the surface of a conductive or semiconductive material on the undercoat, and for forming on the undercoat a polymeric layer obtained by polymerization, in particular free radical polymerization, in situ of at least one monomer, initiated from the initiator function.