公开(公告)号：US06688017B2

公开(公告)日：2004-02-10

申请号：US10152479

申请日：2002-05-21

申请人： Tai-Kun Kao ,  Kuo-I Huang

发明人： Tai-Kun Kao ,  Kuo-I Huang

IPC分类号： G01D2100

CPC分类号： H01J37/023 ,  H01J37/3171 ,  H01J2237/08

摘要： A method for aligning an extraction electrode to an arc chamber of an ion implantation apparatus can be carried out by first providing a calibration tool that is shaped essentially of a flat key that has sections of different widths. The extraction electrode can then be tilted by switching on a tilt motor, while being moved horizontally by switching on an alignment motor until the calibration tool can be smoothly inserted into the slit openings in the arc chamber and in the extraction electrode. The tilt motor and the alignment motor are controlled by a tilt/align controller. When such insertion is not possible, the extraction electrode can be continuously tilted and moved horizontally until such smooth insertion is possible. The present invention further discloses a calibration tool that can be used easily for aligning an extraction electrode to an arc chamber of an ion implantation apparatus.

摘要翻译： 可以通过首先提供基本上由具有不同宽度的部分的平面键形成的校准工具来执行用于将引出电极对准离子注入装置的电弧室的方法。 然后可以通过接通倾斜电动机同时通过打开对准电动机水平移动直到校准工具能够平滑地插入到电弧室和提取电极中的狭缝开口中来使抽出电极倾斜。 倾斜电机和对位电机由倾斜/对准控制器控制。 当这种插入是不可能的时，提取电极可以被连续地倾斜并水平移动，直到可以这样平滑地插入。 本发明还公开了一种校准工具，其可以容易地用于将引出电极与离子注入装置的电弧室对准。

公开(公告)号：US20050205808A1

公开(公告)日：2005-09-22

申请号：US10804890

申请日：2004-03-18

申请人： Chen-Chung Li ,  Jui-Chun Weng ,  Chi-Chieh Wang ,  Tai-Kun Kao

发明人： Chen-Chung Li ,  Jui-Chun Weng ,  Chi-Chieh Wang ,  Tai-Kun Kao

IPC分类号： H01J37/302 ,  H01J37/304 ,  H01J37/317

CPC分类号： H01J37/302 ,  H01J37/3171

摘要： An ion implanter is provided having an ion source; an AMU analyzing magnet having a fixed radius Ram; an ion extraction voltage source; a communication interface for monitoring implantation parameters; and an equipment server having a data log. The ion implanter further has an arithmetic processor capable of determining a real-time estimated radius Re of a circular path of ions being implanted into a target wafer. A method of using the ion implanter provide an interlock on an AMU of each of a plurality of ions being implanted into the target wafer. The method has the step of determining in real-time if an ion implanter is implanting a desired ion into a target wafer. Also, the method determines if an absolute value of an offset between the Ram and Re exceeds a predetermined radius tolerance level L and adjusts the implanter accordingly if L is exceeded.

摘要翻译： 提供具有离子源的离子注入机; 具有固定半径R am的AMU分析磁体; 离子提取电压源; 用于监测植入参数的通信接口; 以及具有数据日志的设备服务器。 离子注入机还具有算术处理器，该算术处理器能够确定注入目标晶片的离子的圆形路径的实时估计半径R e E。 使用离子注入机的方法在被注入到目标晶片中的多个离子中的每一个的AMU上提供互锁。 该方法具有实时确定离子注入机是否将期望的离子注入目标晶片的步骤。 此外，该方法确定R＆gt; am和＆lt;＆gt;＆lt; / SUB之间的偏移的绝对值是否超过预定的半径公差等级L，并且如果超过L则相应地调整注入机。

公开(公告)号：US07023003B2

公开(公告)日：2006-04-04

申请号：US10804890

申请日：2004-03-18

申请人： Chen-Chung Li ,  Jui-Chun Weng ,  Chi-Chieh Wang ,  Tai-Kun Kao

发明人： Chen-Chung Li ,  Jui-Chun Weng ,  Chi-Chieh Wang ,  Tai-Kun Kao

IPC分类号： H01J37/00 ,  H01J37/08 ,  H01J37/20

CPC分类号： H01J37/302 ,  H01J37/3171

摘要： An ion implanter is provided having an ion source; an AMU analyzing magnet having a fixed radius Ram; an ion extraction voltage source; a communication interface for monitoring implantation parameters; and an equipment server having a data log. The ion implanter further has an arithmetic processor capable of determining a real-time estimated radius Re of a circular path of ions being implanted into a target wafer. A method of using the ion implanter provide an interlock on an AMU of each of a plurality of ions being implanted into the target wafer. The method has the step of determining in real-time if an ion implanter is implanting a desired ion into a target wafer. Also, the method determines if an absolute value of an offset between the Ram and Re exceeds a predetermined radius tolerance level L and adjusts the implanter accordingly if L is exceeded.

摘要翻译： 提供具有离子源的离子注入机; 具有固定半径R am的AMU分析磁体; 离子提取电压源; 用于监测植入参数的通信接口; 以及具有数据日志的设备服务器。 离子注入机还具有算术处理器，该算术处理器能够确定注入目标晶片的离子的圆形路径的实时估计半径R e E。 使用离子注入机的方法在被注入到目标晶片中的多个离子中的每一个的AMU上提供互锁。 该方法具有实时确定离子注入机是否将期望的离子注入目标晶片的步骤。 此外，该方法确定R＆gt; am和＆lt;＆gt;＆lt; / SUB之间的偏移的绝对值是否超过预定的半径公差等级L，并且如果超过L则相应地调整注入机。