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    Compound for filling small gaps in a semiconductor device, composition including the compound, and method of fabricating a semiconductor capacitor
    7.
    发明授权
    Compound for filling small gaps in a semiconductor device, composition including the compound, and method of fabricating a semiconductor capacitor 有权
    用于填充半导体器件中的小间隙的化合物，包含该化合物的组合物以及制造半导体电容器的方法

    公开(公告)号：US08188576B2

    公开(公告)日：2012-05-29

    申请号：US13038608

    申请日：2011-03-02

    申请人： Sung Jae Lee ,  Hee Jae Kim ,  Tae Ho Kim ,  Sang Geun Yun ,  Chang Soo Woo

    发明人： Sung Jae Lee ,  Hee Jae Kim ,  Tae Ho Kim ,  Sang Geun Yun ,  Chang Soo Woo

    IPC分类号： H01L23/58

    CPC分类号： C08G77/04 ,  Y10T428/31663

    摘要： A compound for filling small gaps in a semiconductor device, a composition for filling small gaps in a semiconductor device, and a method of fabricating a semiconductor capacitor, the compound including hydrolysates prepared by hydrolysis, in the presence of an acid catalyst, of compounds represented by Formulae 1, 2, and 3: [RO]3Si—[CH2]nR′  (1) wherein, in Formula 1, n is an integer from 0 to about 10, and R and R′ are each independently a hydrogen atom, a C1-C12 alkyl group, or a C6-C20 aryl group; HOOC[CH2]nR2Si—O—SiR′2[CH2]nCOOH  (2) wherein, in Formula 2, each n is independently an integer from 0 to about 10, and R and R′ are each independently a C1-C12 alkyl group or a C6-C20 aryl group; and R3Si—O—X  (3) wherein, in Formula 3, X is R′ or SiR′3, and R and R′ are each independently a C1-C12 alkyl group or a C6-C20 aryl group, or a polycondensate prepared by polycondensation of the hydrolysates represented by Formulae 1, 2, and 3.

    摘要翻译： 一种用于填充半导体器件中的小间隙的化合物，用于填充半导体器件中的小间隙的组合物以及制造半导体电容器的方法，所述化合物包括通过水解制备的水解产物，在酸催化剂存在下，表示的化合物 通式1，2和3：[RO] 3Si- [CH 2] n R'（1）其中，在式1中，n为0至约10的整数，R和R'各自独立地为氢原子， C 1 -C 12烷基或C 6 -C 20芳基; HOOC [CH2] nR2Si-O-SiR'2 [CH2] nCOOH（2）其中，在式2中，每个n独立地为0至约10的整数，并且R和R'各自独立地为C 1 -C 12烷基 或C 6 -C 20芳基; 和R3Si-O-X（3）其中，在式3中，X为R'或SiR'3，R和R'各自独立地为C1-C12烷基或C6-C20芳基，或缩聚物 通过由式1,2和3表示的水解产物的缩聚。