公开(公告)号：US20110199106A1

公开(公告)日：2011-08-18

申请号：US13026524

申请日：2011-02-14

Applicant: Christian Lotto ,  Peter Seitz ,  Simon Neukom

Inventor： Christian Lotto ,  Peter Seitz ,  Simon Neukom

IPC: G01R27/08

CPC classification number: H04N5/335 ,  H03F3/505 ,  H04N5/3575 ,  H04N5/378

Abstract: The present invention discloses a solid-state electric charge sensor (200, 600) comprising at least one signal-readout circuit (205, 605) that comprises a current source (140, 640) and a column line (120, 620). The sensor also comprises at least one charge detector circuit (210, 610) that is operatively coupled with the at least one signal-readout circuit (205, 605). The at least one signal-readout circuit (205, 605) is characterized by further comprising at least one open-loop amplifier (250, 650), the input of which is operatively connectable with the at least one column signal line (220, 620) and with the at least one current source (240, 640); at least one feedback line (230, 630) that is operatively connectable with the output (254, 654) of the at least one open-loop amplifier (250, 650); and operative to selectively form a negative feedback loop; and wherein the open-loop amplifier (250, 650) has an inverting voltage gain.

Abstract translation: 本发明公开了一种固态电荷传感器（200,600），其包括至少一个包括电流源（140,640）和列线（120,620）的信号读出电路（205,605）。 所述传感器还包括至少一个与所述至少一个信号读出电路（205,605）可操作地耦合的电荷检测器电路（210,610）。 所述至少一个信号读出电路（205,605）的特征在于还包括至少一个开环放大器（250,650），其输入可操作地与所述至少一个列信号线（220,620） ）和所述至少一个电流源（240,640）; 至少一个反馈线（230,630），其可操作地与所述至少一个开环放大器（250,650）的输出（254,654）连接; 并且可操作地选择性地形成负反馈回路; 并且其中所述开环放大器（250,650）具有反相电压增益。

公开(公告)号：US07671671B2

公开(公告)日：2010-03-02

申请号：US12090433

申请日：2006-10-05

Applicant: Bernhard Buettgen ,  Michael Lehmann ,  Simon Neukom ,  Thierry Oggier ,  Felix Lustenberger

Inventor： Bernhard Buettgen ,  Michael Lehmann ,  Simon Neukom ,  Thierry Oggier ,  Felix Lustenberger

IPC: G01R25/00 ,  H03D13/00 ,  H03K17/693

CPC classification number: H03D7/00

Abstract: A demodulation device (1) in semiconductor technology is disclosed. The device (1) is capable of demodulating an injected modulated current. The device (1) comprises an input node (IN1), a sampling stage (DG1, IG1, GS1, IG2, DG2) and at least two output nodes (D1, D2). The sampling stage DG1, IG1, GS1, IG2, DG2) comprises transfer means (GL, GM, GR) for transferring a modulated charge-current signal from the input node (IN1) to one of the output nodes (D1, D2) allocated to the respective time interval within the modulation period. The small size and the ability to reproduce the device (1) in standard semiconductor technologies make possible a cost-efficient integration of the device (1).

Abstract translation: 公开了半导体技术中的解调装置（1）。 装置（1）能够解调注入的调制电流。 设备（1）包括输入节点（IN1），采样级（DG1，IG1，GS1，IG2，DG2）和至少两个输出节点（D1，D2）。 采样级DG1，IG1，GS1，IG2，DG2）包括用于将调制的充电电流信号从输入节点（IN1）传送到分配的输出节点（D1，D2）之一的传送装置（GL，GM，GR） 到调制周期内的相应时间间隔。 在标准半导体技术中，小尺寸和再现设备（1）的能力使得设备（1）的成本有效的集成成为可能。

公开(公告)号：US07973841B2

公开(公告)日：2011-07-05

申请号：US12250997

申请日：2008-10-14

Applicant: Simon Neukom

Inventor： Simon Neukom

IPC: H04N3/14 ,  H04N5/335 ,  H01L31/062 ,  H01L31/113

CPC classification number: H04N5/355 ,  H04N5/3575 ,  H04N5/37452

Abstract: A photo sensor exhibiting low noise, low smear, low dark current, high dynamic range and global shutter functionality consists either of a pinned (or buried) photodiode or a photo-sensitive charge-coupled device, each with associated transfer gate, a sub-linear element, a shutter transistor, a reset circuit and a read-out circuit. Using two output paths global shutter and high speed operation are possible for the linear and the sub-linear output of the sensor. Because of its compact size, the photo sensor can be employed in one- and two-dimensional image sensors, fabricated with industry-standard CMOS and CCD technologies.

Abstract translation: 表现出低噪声，低污迹，低暗电流，高动态范围和全局快门功能的光电传感器包括固定（或掩埋）光电二极管或光敏电荷耦合器件，每个具有相关的传输门， 线性元件，快门晶体管，复位电路和读出电路。 对于传感器的线性和亚线性输出，可以使用两个输出路径全局快门和高速运行。 由于其尺寸紧凑，所以光电传感器可用于采用行业标准CMOS和CCD技术制造的一维和二维图像传感器。

公开(公告)号：US20110101241A1

公开(公告)日：2011-05-05

申请号：US12987669

申请日：2011-01-10

Applicant: Kaspar Cottier ,  Rolf Kaufmann ,  Rino E. Kunz ,  Thierry Oggier ,  Guy Voirin ,  Simon Neukom ,  Michael Lehmann

Inventor： Kaspar Cottier ,  Rolf Kaufmann ,  Rino E. Kunz ,  Thierry Oggier ,  Guy Voirin ,  Simon Neukom ,  Michael Lehmann

IPC: G01N21/64

CPC classification number: H01L31/0232 ,  H01L27/14601 ,  H01L27/14623 ,  H01L27/148 ,  H01L31/02005

Abstract: A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).

Abstract translation: 在具有用于光电检测器的平面的半导体基板（S）中形成像素。 它包括用于将入射光（In）转换成电荷载体的有源区域，用于在有源区域上产生横向电位（Φ（x））的摄像机（PGL，PGM，PGR）和用于存储的积分栅极 在活动区域​​中生成的电荷载体和转储位点（Ddiff）。 像素还包括分离增强装置（SL），用于另外增强有源区域中的电荷分离和从有源区域到积分栅极（IG）的电荷传输。 分离增强装置（SL）例如是设计成使得对于给定的横向电位（Φ（x）），入射光（In）不会撞击到电荷载体不会在其上的部分的屏蔽层 运送到集成门（IG）。

公开(公告)号：US20090095986A1

公开(公告)日：2009-04-16

申请号：US12250997

申请日：2008-10-14

Applicant: Simon Neukom

Inventor： Simon Neukom

IPC: H01L31/00

CPC classification number: H04N5/355 ,  H04N5/3575 ,  H04N5/37452

Abstract: A photo sensor exhibiting low noise, low smear, low dark current, high dynamic range and global shutter functionality consists either of a pinned (or buried) photodiode or a photo-sensitive charge-coupled device, each with associated transfer gate, a sub-linear element, a shutter transistor, a reset circuit and a read-out circuit. Using two output paths global shutter and high speed operation are possible for the linear and the sub-linear output of the sensor. Because of its compact size, the photo sensor can be employed in one- and two-dimensional image sensors, fabricated with industry-standard CMOS and CCD technologies.

Abstract translation: 表现出低噪声，低污迹，低暗电流，高动态范围和全局快门功能的光电传感器包括固定（或掩埋）光电二极管或光敏电荷耦合器件，每个具有相关的传输门， 线性元件，快门晶体管，复位电路和读出电路。 对于传感器的线性和亚线性输出，可以使用两个输出路径全局快门和高速运行。 由于其尺寸紧凑，所以光电传感器可用于采用行业标准CMOS和CCD技术制造的一维和二维图像传感器。

公开(公告)号：US20090014658A1

公开(公告)日：2009-01-15

申请号：US11658516

申请日：2005-07-25

Applicant: Kaspar Cottier ,  Rolf Kaufmann ,  Rino E. Kunz ,  Thierry Oggier ,  Guy Voirin ,  Simon Neukom ,  Michael Lehmann

Inventor： Kaspar Cottier ,  Rolf Kaufmann ,  Rino E. Kunz ,  Thierry Oggier ,  Guy Voirin ,  Simon Neukom ,  Michael Lehmann

IPC: G01T1/24

CPC classification number: H01L31/0232 ,  H01L27/14601 ,  H01L27/14623 ,  H01L27/148 ,  H01L31/02005

Abstract: A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).

Abstract translation: 在具有用于光电检测器的平面的半导体基板（S）中形成像素。 它包括用于将入射光（In）转换成电荷载体的有源区域，用于在有源区域产生横向电势（Phi（x））的摄摄门（PGL，PGM，PGR）和用于存储的积分栅极 在活动区域​​中生成的电荷载体和转储位点（Ddiff）。 像素还包括分离增强装置（SL），用于另外增强有源区域中的电荷分离和从有源区域到积分栅极（IG）的电荷传输。 分离增强装置（SL）例如是设计成对于给定的横向电势（Phi（x））的屏蔽层，入射光（In）不会撞击载流子不会在其上的部分 运送到集成门（IG）。

公开(公告)号：US08563916B2

公开(公告)日：2013-10-22

申请号：US13026524

申请日：2011-02-14

Applicant: Christian Lotto ,  Peter Seitz ,  Simon Neukom

Inventor： Christian Lotto ,  Peter Seitz ,  Simon Neukom

IPC: H01L27/00

CPC classification number: H04N5/335 ,  H03F3/505 ,  H04N5/3575 ,  H04N5/378

Abstract: The present invention discloses a solid-state electric charge sensor (200, 600) comprising at least one signal-readout circuit (205, 605) that comprises a current source (140, 640) and a column line (120, 620). The sensor also comprises at least one charge detector circuit (210, 610) that is operatively coupled with the at least one signal-readout circuit (205, 605). The at least one signal-readout circuit (205, 605) is characterized by further comprising at least one open-loop amplifier (250, 650), the input of which is operatively connectable with the at least one column signal line (220, 620) and with the at least one current source (240, 640); at least one feedback line (230, 630) that is operatively connectable with the output (254, 654) of the at least one open-loop amplifier (250, 650); and operative to selectively form a negative feedback loop; and wherein the open-loop amplifier (250, 650) has an inverting voltage gain.

Abstract translation: 本发明公开了一种固态电荷传感器（200,600），其包括至少一个包括电流源（140,640）和列线（120,620）的信号读出电路（205,605）。 所述传感器还包括至少一个与所述至少一个信号读出电路（205,605）可操作地耦合的电荷检测器电路（210,610）。 所述至少一个信号读出电路（205,605）的特征在于还包括至少一个开环放大器（250,650），其输入可操作地与所述至少一个列信号线（220,620） ）和所述至少一个电流源（240,640）; 至少一个反馈线（230,630），其可操作地与所述至少一个开环放大器（250,650）的输出（254,654）连接; 并且可操作地选择性地形成负反馈回路; 并且其中所述开环放大器（250,650）具有反相电压增益。

公开(公告)号：US07897928B2

公开(公告)日：2011-03-01

申请号：US11658516

申请日：2005-07-25

Applicant: Rolf Kaufmann ,  Thierry Oggier ,  Simon Neukom ,  Michael Lehmann

Inventor： Rolf Kaufmann ,  Thierry Oggier ,  Simon Neukom ,  Michael Lehmann

IPC: G01T1/24 ,  H01L27/148

CPC classification number: H01L31/0232 ,  H01L27/14601 ,  H01L27/14623 ,  H01L27/148 ,  H01L31/02005

Abstract: A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).

Abstract translation: 在具有用于光电检测器的平面的半导体基板（S）中形成像素。 它包括用于将入射光（In）转换成电荷载体的有源区域，用于在有源区域上产生横向电位（Φ（x））的照相门（PGL，PGM，PGR）和用于存储的积分栅极 在活动区域​​中生成的电荷载体和转储位点（Ddiff）。 像素还包括分离增强装置（SL），用于另外增强有源区域中的电荷分离和从有源区域到积分栅极（IG）的电荷传输。 分离增强装置（SL）例如是设计成使得对于给定的横向电位（Φ（x）），入射光（In）不会撞击到电荷载体不会在其上的部分的屏蔽层 运送到集成门（IG）。

公开(公告)号：US20080247033A1

公开(公告)日：2008-10-09

申请号：US12090433

申请日：2006-10-05

Applicant: Bernhard Buettgen ,  Michael Lehmann ,  Simon Neukom ,  Thierry Oggier ,  Felix Lustenberger

Inventor： Bernhard Buettgen ,  Michael Lehmann ,  Simon Neukom ,  Thierry Oggier ,  Felix Lustenberger

IPC: G02F2/00 ,  H03D3/02

CPC classification number: H03D7/00

Abstract: A demodulation device (1) in semiconductor technology is disclosed. The device (1) is capable of demodulating an injected modulated current. The device (1) comprises an input node (IN1), a sampling stage (DG1, IG1, GS1 IG2, DG2) and at least two output nodes (D1, D2). The sampling stage DG1, IG1, GS1, IG2, DG2) comprises transfer means (GL, GM, GR) for transferring a modulated charge-current signal from the input node (IN1) to one of the output nodes (D1, D2) allocated to the respective time interval within the modulation period. The small size and the ability to reproduce the device (1) in standard semiconductor technologies make possible a cost-efficient integration of the device (1).

Abstract translation: 公开了半导体技术中的解调装置（1）。 装置（1）能够解调注入的调制电流。 装置（1）包括输入节点（IN 1），采样级（DG 1，IG 1，GS 1 IG 2，DG 2）和至少两个输出节点（D 1，D 2）。 采样级DG 1，IG 1，GS 1，IG 2，DG 2）包括用于将调制的充电电流信号从输入节点（IN 1）传送到输出节点之一的传送装置（GL，GM，GR） （D 1，D 2）分配给调制周期内的各个时间间隔。 在标准半导体技术中，小尺寸和再现设备（1）的能力使得设备（1）的成本有效的集成成为可能。