公开(公告)号：US20070264820A1

公开(公告)日：2007-11-15

申请号：US11434318

申请日：2006-05-15

Applicant: Wuping Liu ,  Raymond Joy ,  Beichao Zhang ,  Liang Hsia ,  Boon Seah ,  Shyam Pal

Inventor： Wuping Liu ,  Raymond Joy ,  Beichao Zhang ,  Liang Hsia ,  Boon Seah ,  Shyam Pal

IPC: H01L21/4763

CPC classification number: H01L21/76802 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76814

Abstract: An embodiment of the invention shows a process to form a damascene opening preferably without hardmask overhang or dielectric layer undercut/void. The low-k dielectric material can be sandwiched in two hardmask films to form the dielectric film through which an interconnect opening is etched. A first example embodiment comprises the following. We form a lower interconnect and an insulating layer over a semiconductor structure. We form a first hardmask a dielectric layer, and a second hardmask layer, over the lower interconnect and insulating layer. We etch a first interconnect opening in the first hardmask, the dielectric layer and the second hardmask layer. Lastly, we form an interconnect in the first interconnect opening.

Abstract translation: 本发明的一个实施例示出了一种形成镶嵌开口的方法，优选地不具有硬掩模悬垂或电介质层底切/空隙。 低k电介质材料可以被夹在两个硬掩模膜中以形成蚀刻互连开口的电介质膜。 第一示例性实施例包括以下。 我们在半导体结构上形成下互连和绝缘层。 我们在下互连和绝缘层上形成第一硬掩模介电层和第二硬掩模层。 我们蚀刻第一硬掩模，电介质层和第二硬掩模层中的第一互连开口。 最后，我们在第一个互连开口中形成互连。

公开(公告)号：US07601607B2

公开(公告)日：2009-10-13

申请号：US11434318

申请日：2006-05-15

Applicant: Wuping Liu ,  Raymond Joy ,  Beichao Zhang ,  Liang Choo Hsia ,  Boon Meng Seah ,  Shyam Pal

Inventor： Wuping Liu ,  Raymond Joy ,  Beichao Zhang ,  Liang Choo Hsia ,  Boon Meng Seah ,  Shyam Pal

IPC: H01L21/4763

CPC classification number: H01L21/76802 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76814

Abstract: An embodiment of the invention shows a process to form a damascene opening preferably without hardmask overhang or dielectric layer undercut/void. The low-k dielectric material can be sandwiched in two hardmask films to form the dielectric film through which an interconnect opening is etched. A first example embodiment comprises the following. We form a lower interconnect and an insulating layer over a semiconductor structure. We form a first hardmask a dielectric layer, and a second hardmask layer, over the lower interconnect and insulating layer. We etch a first interconnect opening in the first hardmask, the dielectric layer and the second hardmask layer. Lastly, we form an interconnect in the first interconnect opening.

Abstract translation: 本发明的一个实施例示出了一种形成镶嵌开口的方法，优选地不具有硬掩模悬垂或电介质层底切/空隙。 低k电介质材料可以被夹在两个硬掩模膜中以形成蚀刻互连开口的电介质膜。 第一示例性实施例包括以下。 我们在半导体结构上形成下互连和绝缘层。 我们在下互连和绝缘层上形成第一硬掩模介电层和第二硬掩模层。 我们蚀刻第一硬掩模，电介质层和第二硬掩模层中的第一互连开口。 最后，我们在第一个互连开口中形成互连。