公开(公告)号：US07122878B2

公开(公告)日：2006-10-17

申请号：US11143229

申请日：2005-06-02

申请人： Chi-Feng Huang ,  Chun-Hon Chen ,  Shy Chy Wong ,  Chih Hsien Lin

发明人： Chi-Feng Huang ,  Chun-Hon Chen ,  Shy Chy Wong ,  Chih Hsien Lin

IPC分类号： H01L29/00

CPC分类号： H01L28/60 ,  H01L21/28568 ,  H01L21/3143 ,  H01L21/31608 ,  H01L21/31637 ,  H01L21/3185 ,  H01L21/76838 ,  H01L28/75

摘要： A new method is provided for the creation of a high-reliability metal capacitor as part of back-end processing. A first layer of metal interconnect is created, ac contact point is provided in the surface of the first layer of interconnect aligned with which a capacitor is to be created. A copper interconnect is formed overlying the contact point using TaN for the bottom plate, a high dielectric-constant dielectric material capacitor and using TaN for the top plate. The deposited layers are patterned and etched, a spacer layer is formed over sidewalls of the capacitor to prevent capacitor sidewall leakage. Top interconnect metal is then formed by first depositing a layer of etch stop material for further interconnection of the capacitor and the semiconductor devices provided in the underlying substrate.

摘要翻译： 提供了一种用于创建高可靠性金属电容器作为后端处理的一部分的新方法。 产生金属互连的第一层，在要与其形成电容器的第一互连层的表面上提供交流接触点。 使用用于底板的TaN，高介电常数介电材料电容器和使用TaN作为顶板，形成覆盖接触点的铜互连。 沉积的层被图案化和蚀刻，在电容器的侧壁上形成间隔层以防止电容器侧壁泄漏。 然后通过首先沉积一层蚀刻停止材料形成顶部互连金属，用于电容器和设置在下面的衬底中的半导体器件的进一步互连。

公开(公告)号：US06916722B2

公开(公告)日：2005-07-12

申请号：US10307617

申请日：2002-12-02

申请人： Chi-Feng Huang ,  Chun-Hon Chen ,  Shy-Chy Wong ,  Chih Hsien Lin

发明人： Chi-Feng Huang ,  Chun-Hon Chen ,  Shy-Chy Wong ,  Chih Hsien Lin

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L21/20

CPC分类号： H01L28/60 ,  H01L21/28568 ,  H01L21/3143 ,  H01L21/31608 ,  H01L21/31637 ,  H01L21/3185 ,  H01L21/76838 ,  H01L28/75

摘要： A new method is provided for the creation of a high-reliability metal capacitor as part of back-end processing. A first layer of metal interconnect is created, a contact point is provided in the surface of the first layer of interconnect aligned with which a capacitor is to be created. A copper interconnect is formed overlying the contact point using TaN for the bottom plate, a high dielectric-constant dielectric material capacitor and using TaN for the top plate. The deposited layers are patterned and etched, a spacer layer is formed over sidewalls of the capacitor to prevent capacitor sidewall leakage. Top interconnect metal is then formed by first depositing a layer of etch stop material for further interconnection of the capacitor and the semiconductor devices provided in the underlying substrate.

摘要翻译： 提供了一种用于创建高可靠性金属电容器作为后端处理的一部分的新方法。 产生第一层金属互连，在第一层互连层的表面上提供一个接触点，与其形成电容器。 使用用于底板的TaN，高介电常数介电材料电容器和使用TaN作为顶板，形成覆盖接触点的铜互连。 沉积的层被图案化和蚀刻，在电容器的侧壁上形成间隔层以防止电容器侧壁泄漏。 然后通过首先沉积一层蚀刻停止材料形成顶部互连金属，以便电容器和设置在下面的衬底中的半导体器件进一步互连。

公开(公告)号：US20050221575A1

公开(公告)日：2005-10-06

申请号：US11143229

申请日：2005-06-02

申请人： Chi-Feng Huang ,  Chun-Hon Chen ,  Shy-Chy Wong ,  Chih Lin

发明人： Chi-Feng Huang ,  Chun-Hon Chen ,  Shy-Chy Wong ,  Chih Lin

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/20

CPC分类号： H01L28/60 ,  H01L21/28568 ,  H01L21/3143 ,  H01L21/31608 ,  H01L21/31637 ,  H01L21/3185 ,  H01L21/76838 ,  H01L28/75

摘要： A new method is provided for the creation of a high-reliability metal capacitor as part of back-end processing. A first layer of metal interconnect is created, ac contact point is provided in the surface of the first layer of interconnect aligned with which a capacitor is to be created. A copper interconnect is formed overlying the contact point using TaN for the bottom plate, a high dielectric-constant dielectric material capacitor and using TaN for the top plate. The deposited layers are patterned and etched, a spacer layer is formed over sidewalls of the capacitor to prevent capacitor sidewall leakage. Top interconnect metal is then formed by first depositing a layer of etch stop material for further interconnection of the capacitor and the semiconductor devices provided in the underlying substrate.

摘要翻译： 提供了一种用于创建高可靠性金属电容器作为后端处理的一部分的新方法。 产生金属互连的第一层，在要与其形成电容器的第一互连层的表面上提供交流接触点。 使用用于底板的TaN，高介电常数介电材料电容器和使用TaN作为顶板，形成覆盖接触点的铜互连。 沉积的层被图案化和蚀刻，在电容器的侧壁上形成间隔层以防止电容器侧壁泄漏。 然后通过首先沉积一层蚀刻停止材料形成顶部互连金属，以便电容器和设置在下面的衬底中的半导体器件进一步互连。