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1.发明申请Semiconductor Device with L-Shaped Spacer and Method of Manufacturing the Same 有权具有L形隔板的半导体器件及其制造方法公开(公告)号：US20070272962A1
公开(公告)日：2007-11-29
申请号：US11465881
申请日：2006-08-21
Applicant: Chung-We Pan , Shi-Cheng Lin , Ching-Hung Fu , Chih-Ping Chung
Inventor： Chung-We Pan , Shi-Cheng Lin , Ching-Hung Fu , Chih-Ping Chung
IPC: H01L29/94 , H01L21/336 , H01L27/108 , H01L29/76 , H01L31/119
CPC classification number: H01L21/28273 , H01L27/115 , H01L27/11521
Abstract: A semiconductor device with an L-shape spacer and the method for manufacturing the same are provided. The semiconductor device comprises a substrate, a composite spacer, and a tunnel insulating layer. The substrate comprises a shallow trench isolation structure and a neighboring active area. The composite spacer is formed on the sidewall of the shallow trench isolation structure, and further comprises a first insulating layer and an L-shape second insulating layer spacer, wherein the first insulating layer is located between the L-shape second insulating layer spacer and the substrate. The tunnel insulating layer is located on the substrate of the active area and connects to the first insulating layer of the composite spacer on its corresponding side.
Abstract translation: 提供具有L形间隔物的半导体器件及其制造方法。 半导体器件包括衬底，复合间隔物和隧道绝缘层。 衬底包括浅沟槽隔离结构和相邻有源区。 复合间隔物形成在浅沟槽隔离结构的侧壁上，还包括第一绝缘层和L形第二绝缘层间隔物，其中第一绝缘层位于L形第二绝缘层间隔物和 基质。 隧道绝缘层位于有源区的衬底上，并与其相应侧上的复合衬垫的第一绝缘层相连。
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2.发明授权Manufacturing multilayer conjugate polymer optoelectronics device by using buffer layer 有权通过使用缓冲层制造多层共轭聚合物光电子器件公开(公告)号：US08017175B2
公开(公告)日：2011-09-13
申请号：US11313043
申请日：2005-12-20
Applicant: Hsin-Fei Meng , Sheng-Fu Horng , Chain-Shu Hsu , Shi-Cheng Lin , Hua-Hsien Liao
Inventor： Hsin-Fei Meng , Sheng-Fu Horng , Chain-Shu Hsu , Shi-Cheng Lin , Hua-Hsien Liao
IPC: B05D5/06
CPC classification number: H01L51/56 , H01L51/007 , Y10T428/31504
Abstract: A highly stable, multilayer organic molecular photoelectric element without interlayer miscibility phenomenon during manufacturing process, and a method for producing multilayer organic molecular photoelectric elements with simplified solution process are disclosed.
Abstract translation: 公开了一种在制造过程中不具有层间混溶性现象的高度稳定的多层有机分子光电元件，以及简化溶液法制造多层有机分子光电元件的方法。
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3.发明授权Semiconductor device with L-shaped spacer and method of manufacturing the same 有权具有L形间隔件的半导体器件及其制造方法公开(公告)号：US07524732B2
公开(公告)日：2009-04-28
申请号：US11465881
申请日：2006-08-21
Applicant: Chung-We Pan , Shi-Cheng Lin , Ching-Hung Fu , Chih-Ping Chung
Inventor： Chung-We Pan , Shi-Cheng Lin , Ching-Hung Fu , Chih-Ping Chung
IPC: H01L21/20
CPC classification number: H01L21/28273 , H01L27/115 , H01L27/11521
Abstract: A semiconductor device with an L-shape spacer and the method for manufacturing the same are provided. The semiconductor device comprises a substrate, a composite spacer, and a tunnel insulating layer. The substrate comprises a shallow trench isolation structure and a neighboring active area. The composite spacer is formed on the sidewall of the shallow trench isolation structure, and further comprises a first insulating layer and an L-shape second insulating layer spacer, wherein the first insulating layer is located between the L-shape second insulating layer spacer and the substrate. The tunnel insulating layer is located on the substrate of the active area and connects to the first insulating layer of the composite spacer on its corresponding side.
Abstract translation: 提供具有L形间隔物的半导体器件及其制造方法。 半导体器件包括衬底，复合间隔物和隧道绝缘层。 衬底包括浅沟槽隔离结构和相邻有源区。 复合间隔物形成在浅沟槽隔离结构的侧壁上，还包括第一绝缘层和L形第二绝缘层间隔物，其中第一绝缘层位于L形第二绝缘层间隔物和 基质。 隧道绝缘层位于有源区的衬底上，并与其相应侧上的复合衬垫的第一绝缘层相连。
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4.发明申请Manufacturing multilayer conjugate polymer optoelectronics device by using buffer layer 有权通过使用缓冲层制造多层共轭聚合物光电子器件公开(公告)号：US20070111006A1
公开(公告)日：2007-05-17
申请号：US11313043
申请日：2005-12-20
Applicant: Hsin-Fei Meng , Sheng-Fu Horng , Chain-Shu Hsu , Shi-Cheng Lin , Hua-Hsien Liao
Inventor： Hsin-Fei Meng , Sheng-Fu Horng , Chain-Shu Hsu , Shi-Cheng Lin , Hua-Hsien Liao
CPC classification number: H01L51/56 , H01L51/007 , Y10T428/31504
Abstract: A highly stable, multilayer organic molecular photoelectric element without interlayer miscibility phenomenon during manufacturing process, and a method for producing multilayer organic molecular photoelectric elements with simplified solution process are disclosed.
Abstract translation: 公开了一种在制造过程中不具有层间混溶性现象的高度稳定的多层有机分子光电元件，以及简化溶液法制造多层有机分子光电元件的方法。
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