公开(公告)号：US06638874B2

公开(公告)日：2003-10-28

申请号：US10198298

申请日：2002-07-17

Applicant: Sang In Yi ,  Seowoo Nam ,  Kenlin Huang ,  Padmapani C. Nallan

Inventor： Sang In Yi ,  Seowoo Nam ,  Kenlin Huang ,  Padmapani C. Nallan

IPC: H01L21302

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/32136

Abstract: One embodiment of the present invention is a method used to fabricate a device on a substrate, which method is utilized at a stage of processing wherein a metal gate stack is disposed or formed over a gate oxide, which metal stack includes a refractory metal layer disposed or formed over a refractory metal barrier/adhesion layer, which method includes steps of: (a) etching the refractory metal layer and stopping on or in the refractory metal barrier/adhesion layer; and (b) etching the refractory metal barrier/adhesion layer using a passivation etching chemistry without oxygen.

Abstract translation: 本发明的一个实施方案是用于在衬底上制造器件的方法，该方法在处理阶段被利用，其中在栅极氧化物上设置或形成金属栅极堆叠，该金属堆叠包括设置的难熔金属层 或形成在难熔金属阻挡层/粘合层上，该方法包括以下步骤：（a）蚀刻难熔金属层并停留在难熔金属屏障/粘合层上或其中; 和（b）使用无氧的钝化蚀刻化学蚀刻难熔金属阻挡层/粘附层。