公开(公告)号：US08592871B2

公开(公告)日：2013-11-26

申请号：US13494321

申请日：2012-06-12

Applicant: Ryo Kajitani

Inventor： Ryo Kajitani

IPC: H01L29/737

CPC classification number: H01L29/7786 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/41766

Abstract: A nitride semiconductor device in which contact resistance between an ohmic electrode and an ohmic recess portion is reduced and a method of manufacturing the nitride semiconductor device are provided. The nitride semiconductor device includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a bandgap wider than a bandgap of the first nitride semiconductor layer; an ohmic recess portion formed in at least the second nitride semiconductor layer; and an ohmic electrode provided in contact with the ohmic recess portion. The ohmic recess portion includes a corrugated structure in at least a part of a plane in contact with the ohmic electrode.

Abstract translation: 提供了欧姆电极和欧姆凹部之间的接触电阻降低的氮化物半导体器件和制造氮化物半导体器件的方法。 氮化物半导体器件包括：形成在衬底上的第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层的带隙宽的带隙的第二氮化物半导体层; 至少形成在第二氮化物半导体层中的欧姆凹部; 以及设置成与欧姆凹部接触的欧姆电极。 欧姆凹部包括在与欧姆电极接触的平面的至少一部分中的波纹状结构。

公开(公告)号：US08076685B2

公开(公告)日：2011-12-13

申请号：US12556946

申请日：2009-09-10

Applicant: Satoshi Tamura ,  Ryo Kajitani

Inventor： Satoshi Tamura ,  Ryo Kajitani

IPC: H01L33/00

CPC classification number: H01L21/30617 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787 ,  H01S5/32341

Abstract: A nitride semiconductor device includes an active layer formed between an n-type cladding layer and a p-type cladding layer, and a current confining layer having a conductive area through which a current flows to the active layer. The current confining layer includes a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The second semiconductor layer is formed on and in contact with the first semiconductor layer and has a smaller lattice constant than that of the first semiconductor layer. The third semiconductor layer is formed on and in contact with the second semiconductor layer and has a lattice constant that is smaller than that of the first semiconductor layer and larger than that of the second semiconductor layer.

Abstract translation: 氮化物半导体器件包括形成在n型覆层和p型覆层之间的有源层和具有电流流向有源层的导电区域的电流限制层。 电流限制层包括第一半导体层，第二半导体层和第三半导体层。 第二半导体层形成在第一半导体层上并与第一半导体层接触，并且具有比第一半导体层的晶格常数更小的晶格常数。 第三半导体层形成在第二半导体层上并与第二半导体层接触，并且具有小于第一半导体层的晶格常数，并且大于第二半导体层的晶格常数。

公开(公告)号：US20110261853A1

公开(公告)日：2011-10-27

申请号：US13180134

申请日：2011-07-11

Applicant: Ryo KAJITANI ,  Satoshi Tamura ,  Hideki Kasugai

Inventor： Ryo KAJITANI ,  Satoshi Tamura ,  Hideki Kasugai

IPC: H01L29/20 ,  H01L29/80 ,  H01L21/20 ,  H01S5/323

CPC classification number: H01L29/7787 ,  B82Y20/00 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/32 ,  H01L29/365 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/66462 ,  H01S5/2081 ,  H01S5/2202 ,  H01S5/3054 ,  H01S5/34333 ,  H01S2301/173

Abstract: A nitride semiconductor device includes a first nitride semiconductor layer formed on a substrate, a defect induced layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the defect induced layer, contacting the defect induced layer, and having an opening through which the defect induced layer is exposed. The defect induced layer has a higher crystal defect density than those of the first and second nitride semiconductor layers.

Abstract translation: 氮化物半导体器件包括形成在衬底上的第一氮化物半导体层，形成在第一氮化物半导体层上的缺陷感应层和形成在缺陷感应层上的第二氮化物半导体层，与缺陷感应层接触，并且具有开口 缺陷诱导层暴露于其中。 缺陷感应层比第一和第二氮化物半导体层具有更高的晶体缺陷密度。

公开(公告)号：US20120248500A1

公开(公告)日：2012-10-04

申请号：US13494321

申请日：2012-06-12

Applicant: Ryo KAJITANI

Inventor： Ryo KAJITANI

IPC: H01L29/06 ,  H01L21/20

CPC classification number: H01L29/7786 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/41766

Abstract: A nitride semiconductor device in which contact resistance between an ohmic electrode and an ohmic recess portion is reduced and a method of manufacturing the nitride semiconductor device are provided. The nitride semiconductor device includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a bandgap wider than a bandgap of the first nitride semiconductor layer; an ohmic recess portion formed in at least the second nitride semiconductor layer; and an ohmic electrode provided in contact with the ohmic recess portion. The ohmic recess portion includes a corrugated structure in at least a part of a plane in contact with the ohmic electrode.

Abstract translation: 提供了欧姆电极和欧姆凹部之间的接触电阻降低的氮化物半导体器件和制造氮化物半导体器件的方法。 氮化物半导体器件包括：形成在衬底上的第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层的带隙宽的带隙的第二氮化物半导体层; 至少形成在第二氮化物半导体层中的欧姆凹部; 以及设置成与欧姆凹部接触的欧姆电极。 欧姆凹部包括在与欧姆电极接触的平面的至少一部分中的波纹状结构。

公开(公告)号：US08253220B2

公开(公告)日：2012-08-28

申请号：US13180134

申请日：2011-07-11

Applicant: Ryo Kajitani ,  Satoshi Tamura ,  Hideki Kasugai

Inventor： Ryo Kajitani ,  Satoshi Tamura ,  Hideki Kasugai

IPC: H01L29/207 ,  H01L21/20

CPC classification number: H01L29/7787 ,  B82Y20/00 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/32 ,  H01L29/365 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/66462 ,  H01S5/2081 ,  H01S5/2202 ,  H01S5/3054 ,  H01S5/34333 ,  H01S2301/173

Abstract: A nitride semiconductor device includes a first nitride semiconductor layer formed on a substrate, a defect induced layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the defect induced layer, contacting the defect induced layer, and having an opening through which the defect induced layer is exposed. The defect induced layer has a higher crystal defect density than those of the first and second nitride semiconductor layers.

Abstract translation: 氮化物半导体器件包括形成在衬底上的第一氮化物半导体层，形成在第一氮化物半导体层上的缺陷感应层和形成在缺陷感应层上的第二氮化物半导体层，与缺陷感应层接触，并且具有开口 缺陷诱导层暴露于其中。 缺陷感应层比第一和第二氮化物半导体层具有更高的晶体缺陷密度。

公开(公告)号：US20100072516A1

公开(公告)日：2010-03-25

申请号：US12556946

申请日：2009-09-10

Applicant: Satoshi TAMURA ,  Ryo KAJITANI

Inventor： Satoshi TAMURA ,  Ryo KAJITANI

IPC: H01L29/205 ,  H01L21/337 ,  H01L29/80

CPC classification number: H01L21/30617 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787 ,  H01S5/32341

Abstract: A nitride semiconductor device includes an active layer formed between an n-type cladding layer and a p-type cladding layer, and a current confining layer having a conductive area through which a current flows to the active layer. The current confining layer includes a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The second semiconductor layer is formed on and in contact with the first semiconductor layer and has a smaller lattice constant than that of the first semiconductor layer. The third semiconductor layer is formed on and in contact with the second semiconductor layer and has a lattice constant that is smaller than that of the first semiconductor layer and larger than that of the second semiconductor layer.

Abstract translation: 氮化物半导体器件包括形成在n型覆层和p型覆层之间的有源层和具有电流流向有源层的导电区域的电流限制层。 电流限制层包括第一半导体层，第二半导体层和第三半导体层。 第二半导体层形成在第一半导体层上并与第一半导体层接触，并且具有比第一半导体层的晶格常数更小的晶格常数。 第三半导体层形成在第二半导体层上并与第二半导体层接触，并且具有小于第一半导体层的晶格常数，并且大于第二半导体层的晶格常数。