公开(公告)号：US5580702A

公开(公告)日：1996-12-03

申请号：US357179

申请日：1994-12-13

Applicant: Rumiko Hayase ,  Yasunobu Onishi ,  Hirokazu Niki ,  Noahiko Oyasato ,  Yoshihito Kobayashi ,  Shuzi Nayase

Inventor： Rumiko Hayase ,  Yasunobu Onishi ,  Hirokazu Niki ,  Noahiko Oyasato ,  Yoshihito Kobayashi ,  Shuzi Nayase

IPC: G03F7/023 ,  G03F7/039 ,  G03F7/30

CPC classification number: G03F7/0233 ,  G03F7/0392 ,  Y10S430/111 ,  Y10S430/146

Abstract: Disclosed herein is a resist for forming patterns, which is greatly sensitive to ultraviolet rays an ionizing radiation, and which can therefore form a high-resolution resist pattern if exposed to ultra violet rays or an unionizing radiation. Hence, the resist is useful in a method of manufacturing semicon ductor devices having high integration densities. The resist comprises tert-butoxycarbonyl methoxypolyhydroxy styrene and an o-quinonediazide compound.

Abstract translation: 本文公开了用于形成图案的抗蚀剂，其对于紫外线对电离辐射非常敏感，并且因此如果暴露于紫外线或组合辐射则可形成高分辨率抗蚀剂图案。 因此，抗蚀剂可用于制造具有高积分密度的半导体器件的方法。 抗蚀剂包括叔丁氧基羰基甲氧基聚羟基苯乙烯和邻醌二叠氮化合物。