Light source optical system, light source device, and image projection apparatus

    公开(公告)号:US11640106B2

    公开(公告)日:2023-05-02

    申请号:US17287523

    申请日:2019-10-07

    Abstract: A light source optical system used with an excitation light source configured to emit first color light includes a wavelength conversion unit configured to receive the first color light emitted by the excitation light source and emit second color light with a wavelength different from a wavelength of the first color light, There is a first optical system having a positive power and a second optical system having a positive power provided in this order in an optical path between the excitation light source and the wavelength conversion unit. When a ray parallel to an optical axis of the first optical system is incident on the first optical system, a ray emitted from the first optical system is incident on the second optical system while approaching the optical axis. The second optical system has under-corrected spherical aberration at a paraxial focal position of the second optical system.

    LIGHT GUIDE AND VIRTUAL IMAGE DISPLAY DEVICE

    公开(公告)号:US20230039870A1

    公开(公告)日:2023-02-09

    申请号:US17876543

    申请日:2022-07-29

    Abstract: A light guide includes: a light guide board configured to allow light incident on an optical entrance to propagate through the light guide board, the light guide board including: the optical entrance; a first face; and at least one partial reflection layer within the light guide board and tilted to the first face. The at least one partial reflection layer is configured to reflect a part of light incident on the at least one partial reflection layer at an incident angle of greater than or equal to a critical angle θr to allow the reflected light to exit the light guide board through the first surface while transmitting therethrough a remainder of the light incident on the at least one partial reflection layer. Formula below is satisfied: θr=sin−1(n2/n1) where θr is the critical angle; n1 is a refractive index of the light guide board; and n2 is a refractive index of the at least one partial reflection layer.

    Light source unit, lighting apparatus and image projection apparatus
    9.
    发明授权
    Light source unit, lighting apparatus and image projection apparatus 有权
    光源单元,照明装置和图像投影装置

    公开(公告)号:US09354498B2

    公开(公告)日:2016-05-31

    申请号:US14189142

    申请日:2014-02-25

    CPC classification number: G03B21/2066 G02B19/0028 G02B19/0061 G03B21/2013

    Abstract: A light source unit includes a first reflector having a reflection face; a second reflector having a reflection face; a plurality of light sources; and a light condensing optical system disposed between the first reflector and the second reflector. Light beams emitted from the plurality of light sources are reflected at a first reflection position on the reflection face of the first reflector, and then reflected at a second reflection position on the reflection face of the second reflector. The second reflection position is close to an optical axis of the light condensing optical system compared to the first reflection position. The light condensing optical system is configured such that the light beam passes through the light condensing optical system at least two times when the light beams reflect between the first reflector and the second reflector.

    Abstract translation: 光源单元包括具有反射面的第一反射器; 具有反射面的第二反射体; 多个光源; 以及设置在第一反射器和第二反射器之间的聚光光学系统。 从多个光源发射的光束在第一反射器的反射面上的第一反射位置被反射,然后在第二反射器的反射面上的第二反射位置被反射。 与第一反射位置相比,第二反射位置接近聚光光学系统的光轴。 聚光光学系统被构造成使得当光束在第一反射器和第二反射器之间反射时,光束通过聚光系统至少两次。

    Semiconductor laser
    10.
    发明授权
    Semiconductor laser 有权
    半导体激光器

    公开(公告)号:US09008140B2

    公开(公告)日:2015-04-14

    申请号:US13798376

    申请日:2013-03-13

    Applicant: Naoki Nakamura

    Inventor: Naoki Nakamura

    CPC classification number: H01S5/323 H01L33/30 H01S5/2226 H01S5/2275 H01S5/3235

    Abstract: A semiconductor laser includes: a p-type semiconductor substrate; a ridge having an active layer and cladding layers on the semiconductor substrate; a current blocking layer embedding side surfaces of the ridge; and an n-type contact layer on the ridge and the current blocking layer. The current blocking layer includes a first p-type layer, an n-type layer or a hole-trapping insulating semiconductor layer, a second p-type layer, a diffusion inhibiting layer, and a third p-type layer stacked, in order, from the semiconductor substrate. The n-type contact layer includes a p-type inverted region located in a portion of the n-type contact layer, in contact with the third p-type layer. Dopants in the third p-type layer diffuse into the p-type inverted region. The diffusion inhibiting layer is an undoped semiconductor material or a semi-insulating semiconductor material and inhibits dopants in the third p-type layer from being diffused into the active layer.

    Abstract translation: 半导体激光器包括:p型半导体衬底; 在半导体衬底上具有有源层和包层的脊; 嵌入脊的侧表面的电流阻挡层; 和脊上的n型接触层和电流阻挡层。 电流阻挡层按顺序包括第一p型层,n型层或空穴俘获绝缘半导体层,第二p型层,扩散抑制层和第三p型层, 从半导体衬底。 n型接触层包括位于n型接触层的与第三p型层接触的部分中的p型反转区域。 第三p型层中的掺杂剂扩散到p型反转区域。 扩散抑制层是未掺杂的半导体材料或半绝缘半导体材料,并且抑制第三p型层中的掺杂剂扩散到有源层中。

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