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公开(公告)号：US07652852B2
公开(公告)日：2010-01-26
申请号：US11161675
申请日：2005-08-11
申请人： Hiroki Maehara , Tomoaki Osada , Mihoko Doi , Koji Tsunekawa , Naoki Watanabe
发明人： Hiroki Maehara , Tomoaki Osada , Mihoko Doi , Koji Tsunekawa , Naoki Watanabe
CPC分类号： H01L43/12 , H01L43/08 , Y10T428/1121 , Y10T428/1143 , Y10T428/1164 , Y10T428/1171
摘要： A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.
摘要翻译： 制造磁阻效应器件的方法能够防止或最小化MR比的下降并且保持磁阻效应器件的高性能，即使通过氧化形成作为构成保护层的最表层的氧化物层 在真空中进行干法蚀刻的微加工生产过程中不可避免地包含这一过程。 用于微处理的两个掩模层被叠加起来。 制造包括至少两个磁性层的磁性多层膜的磁阻效应器的这种制造方法包括在第一掩模材料下面提供作为无机材料的第二掩模材料的步骤，第二掩模材料能够与其它原子反应以形成导电物质 ，以及根据该方法制造的装置。
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公开(公告)号：US20080217289A1
公开(公告)日：2008-09-11
申请号：US12117753
申请日：2008-05-09
申请人： Hiroki Maehara , Tomoaki Osada , Mihoko Doi , Koji Tsunekawa , Naoki Watanabe
发明人： Hiroki Maehara , Tomoaki Osada , Mihoko Doi , Koji Tsunekawa , Naoki Watanabe
CPC分类号： H01L43/12 , H01L43/08 , Y10T428/1121 , Y10T428/1143 , Y10T428/1164 , Y10T428/1171
摘要： A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.
摘要翻译： 制造磁阻效应器件的方法能够防止或最小化MR比的下降并且保持磁阻效应器件的高性能，即使通过氧化形成作为构成保护层的最表层的氧化物层 在真空中进行干法蚀刻的微加工生产过程中不可避免地包含这一过程。 用于微处理的两个掩模层被叠加起来。 制造包括至少两个磁性层的磁性多层膜的磁阻效应器的这种制造方法包括在第一掩模材料下面提供作为无机材料的第二掩模材料的步骤，第二掩模材料能够与其它原子反应以形成导电物质 ，以及根据该方法制造的装置。
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公开(公告)号：US20060038246A1
公开(公告)日：2006-02-23
申请号：US11161675
申请日：2005-08-11
申请人： Hiroki Maehara , Tomoaki Osada , Mihoko Doi , Koji Tsunekawa , Naoki Watanabe
发明人： Hiroki Maehara , Tomoaki Osada , Mihoko Doi , Koji Tsunekawa , Naoki Watanabe
CPC分类号： H01L43/12 , H01L43/08 , Y10T428/1121 , Y10T428/1143 , Y10T428/1164 , Y10T428/1171
摘要： A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.
摘要翻译： 制造磁阻效应器件的方法能够防止或最小化MR比的下降并且保持磁阻效应器件的高性能，即使通过氧化形成作为构成保护层的最表层的氧化物层 在真空中进行干法蚀刻的微加工生产过程中不可避免地包含这一过程。 用于微处理的两个掩模层被叠加起来。 制造包括至少两个磁性层的磁性多层膜的磁阻效应器的这种制造方法包括在第一掩模材料下面提供作为无机材料的第二掩模材料的步骤，第二掩模材料能够与其它原子反应以形成导电物质 ，以及根据该方法制造的装置。
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公开(公告)号：US07727409B2
公开(公告)日：2010-06-01
申请号：US12117753
申请日：2008-05-09
申请人： Hiroki Maehara , Tomoaki Osada , Mihoko Doi , Koji Tsunekawa , Naoki Watanabe
发明人： Hiroki Maehara , Tomoaki Osada , Mihoko Doi , Koji Tsunekawa , Naoki Watanabe
CPC分类号： H01L43/12 , H01L43/08 , Y10T428/1121 , Y10T428/1143 , Y10T428/1164 , Y10T428/1171
摘要： A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.
摘要翻译： 制造磁阻效应器件的方法能够防止或最小化MR比的下降并且保持磁阻效应器件的高性能，即使通过氧化形成作为构成保护层的最表层的氧化物层 在真空中进行干法蚀刻的微加工生产过程中不可避免地包含这一过程。 用于微处理的两个掩模层被叠加起来。 制造包括至少两个磁性层的磁性多层膜的磁阻效应器的这种制造方法包括在第一掩模材料下面提供作为无机材料的第二掩模材料的步骤，第二掩模材料能够与其它原子反应以形成导电物质 ，以及根据该方法制造的装置。
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