公开(公告)号：US20090007416A1

公开(公告)日：2009-01-08

申请号：US12177069

申请日：2008-07-21

Applicant: Richard Jule Contreras ,  Michael Feldbaum ,  Mustafa Michael Pinarbasi

Inventor： Richard Jule Contreras ,  Michael Feldbaum ,  Mustafa Michael Pinarbasi

IPC: G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask. This avoids the formation of a bulbous or mushroom shaped photoresist mask and therefore, avoids shadowing effects during subsequent manufacturing processes.

Abstract translation: 一种用于构造磁阻传感器的方法，其在传感器定义期间避免掩模结构的阴影效应。 该方法包括使用沉积在其上的抗反射涂层（ARC）和感光掩模。 形成光敏掩模以覆盖所需的传感器区域，使非传感器区域暴露。 执行反应离子蚀刻以将感光掩模的图案转移到下面的ARC层上。 反应离子蚀刻（RIE）以相对高的压板功率进行。 较高的压板功率增加晶片的离子轰击，从而增加相对于化学组分的材料去除的物理（即机械）组分。 材料去除的物理组分的这种增加导致感光掩模材料相对于耐磨离子磨损掩模的去除速率增加。 这避免了球形或蘑菇状光致抗蚀剂掩模的形成，因此避免了后续制造过程中的阴影效应。

公开(公告)号：US20060168794A1

公开(公告)日：2006-08-03

申请号：US11046421

申请日：2005-01-28

Applicant: Richard Contreras ,  Michael Feldbaum ,  Mustafa Pinarbasi

Inventor： Richard Contreras ,  Michael Feldbaum ,  Mustafa Pinarbasi

IPC: G11B5/33 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask. This avoids the formation of a bulbous or mushroom shaped photoresist mask and therefore, avoids shadowing effects during subsequent manufacturing processes.

公开(公告)号：US20060002022A1

公开(公告)日：2006-01-05

申请号：US10883141

申请日：2004-06-30

Applicant: Michael Feldbaum ,  John Kim ,  Murali Ramasubramanian ,  Howard Zolla

Inventor： Michael Feldbaum ,  John Kim ,  Murali Ramasubramanian ,  Howard Zolla

IPC: G11B5/17 ,  G11B5/147 ,  G11B5/127 ,  G11B5/33 ,  H04R31/00

CPC classification number: G11B5/127 ,  G11B5/3163 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A first magnetic shield layer of the read head sensor is deposited upon a slider substrate surface. A patterned photoresist is then photolithographically fabricated upon the first magnetic shield layer with openings that are formed alongside the location at which the read sensor will be fabricated. An ion milling step is performed to create pockets within the surface of the magnetic shield layer at the location of the openings in the photoresist layer. The photoresist layer is then removed, and a fill layer is deposited across the surface of the magnetic shield layer in a depth greater than the depth of the pocket. Thereafter, a polishing step is conducted to remove portions of the fill layer down to the surface of the magnetic shield layer. A G1 insulation layer is deposited and a magnetic head sensor element is then fabricated upon the insulation layer.

Abstract translation: 读头传感器的第一磁屏蔽层沉积在滑块基板表面上。 然后将图案化的光致抗蚀剂光刻地制造在具有开口的第一磁屏蔽层上，该开口沿着读取传感器将被制造的位置形成。 执行离子铣削步骤以在光致抗蚀剂层中的开口的位置处在磁屏蔽层的表面内产生凹坑。 然后去除光致抗蚀剂层，并且以大于凹穴深度的深度横跨磁屏蔽层的表面沉积填充层。 此后，进行抛光步骤以将填充层的部分向下移动到磁屏蔽层的表面。 沉积G1绝缘层，然后在绝缘层上制造磁头传感器元件。

公开(公告)号：US08393073B2

公开(公告)日：2013-03-12

申请号：US12177069

申请日：2008-07-21

Applicant: Richard Jule Contreras ,  Michael Feldbaum ,  Mustafa Michael Pinarbasi

Inventor： Richard Jule Contreras ,  Michael Feldbaum ,  Mustafa Michael Pinarbasi

IPC: G11B5/187 ,  C23F1/12

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask. This avoids the formation of a bulbous or mushroom shaped photoresist mask and therefore, avoids shadowing effects during subsequent manufacturing processes.

Abstract translation: 一种用于构造磁阻传感器的方法，其在传感器定义期间避免掩模结构的遮蔽效应。 该方法包括使用沉积在其上的抗反射涂层（ARC）和感光掩模。 形成光敏掩模以覆盖所需的传感器区域，使非传感器区域暴露。 执行反应离子蚀刻以将感光掩模的图案转移到下面的ARC层上。 反应离子蚀刻（RIE）以相对高的压板功率进行。 较高的压板功率增加晶片的离子轰击，从而增加相对于化学组分的材料去除的物理（即机械）组分。 材料去除的物理组分的这种增加导致感光掩模材料相对于耐磨离子磨损掩模的去除速率增加。 这避免了球形或蘑菇状光致抗蚀剂掩模的形成，因此避免了后续制造过程中的阴影效应。

公开(公告)号：US07444739B2

公开(公告)日：2008-11-04

申请号：US11095979

申请日：2005-03-30

Applicant: Michael Feldbaum ,  Wipul Pemsiri Jayasekara ,  Mustafa Michael Pinarbasi

Inventor： Michael Feldbaum ,  Wipul Pemsiri Jayasekara ,  Mustafa Michael Pinarbasi

IPC: G11B5/187 ,  C23F1/12

CPC classification number: G11B5/3903 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A magnetic head fabrication process in which a stencil layer is deposited upon a plurality of sensor layers. A photoresist mask in the desired read track width is fabricated upon the stencil layer. A reactive ion milling step is then conducted to remove the unmasked portions of the stencil layer. Where the stencil layer is composed of an organic compound, such as Duramide and/or diamond-like-carbon, a reactive ion milling step utilizing oxygen species produces a stencil of the present invention having exceptionally straight side walls with practically no undercuts. Thereafter, an ion milling step is undertaken in which the sensor layers that are not covered by the stencil are removed. The accurately formed stencil results in correspondingly accurately formed side walls of the remaining central sensor layers. A magnetic head sensor structure having a desired read track width and accurately formed side walls is thus fabricated.

Abstract translation: 一种磁头制造工艺，其中模版层沉积在多个传感器层上。 在模板层上制造具有所需读取磁道宽度的光致抗蚀剂掩模。 然后进行反应离子研磨步骤以去除模板层的未掩模部分。 当模版层由有机化合物如Duramide和/或类金刚石碳构成时，利用氧气的反应离子研磨步骤产生具有非常直的侧壁的本发明的蜡纸，实际上没有底切。 此后，进行离子研磨步骤，其中未被模板覆盖的传感器层被去除。 准确地形成的模板导致剩余的中央传感器层的相应精确地形成的侧壁。 因此制造了具有期望的读取磁道宽度和精确形成的侧壁的磁头传感器结构。

公开(公告)号：US20080100959A1

公开(公告)日：2008-05-01

申请号：US11588961

申请日：2006-10-27

Applicant: Michael Feldbaum ,  Quang Le ,  Aron Pentek ,  Sue Siyang Zhang

Inventor： Michael Feldbaum ,  Quang Le ,  Aron Pentek ,  Sue Siyang Zhang

IPC: G11B5/127

CPC classification number: G11B5/11 ,  G11B5/315

Abstract: A magnetic write head for perpendicular magnetic recording that has a write pole and a trailing or side shield that has a leading edge that extends to or beyond the leading edge of write pole, thereby ensuring complete side magnetic shielding. The write head can be formed by forming the write pole on a non-magnetic substrate that is constructed of a material that can be readily removed by reactive ion etching (RIE). The write pole can be formed by depositing a layer of magnetic write pole material over the substrate and then forming a mask over the magnetic write pole material. An ion mill can be performed to define the write pole, and then a reactive ion etch can be performed to notch the substrate, so that when a non-magnetic shield gap material is deposited it will be below or at the bottom of the write pole. Then a magnetic shield material can be deposited to form a shield having a leading edge that extends beyond the leading edge of the write pole.

Abstract translation: 一种用于垂直磁记录的磁写头，具有写磁极和后屏蔽或侧屏蔽，其具有延伸到或超过写极的前沿的前沿，从而确保完全的侧磁屏蔽。 写头可以通过在由可以通过反应离子蚀刻（RIE）容易地去除的材料构成的非磁性衬底上形成写极来形成。 可以通过在衬底上沉积一层磁性写入磁极材料，然后在磁性写入磁极材料上形成掩模来形成写入极。 可以执行离子磨以限定写入极，然后可以执行反应离子蚀刻以蚀刻衬底，使得当非磁性屏蔽间隙材料沉积时，它将在写入极的下方或底部 。 然后，可以沉积磁屏蔽材料以形成具有延伸超过写柱的前缘的前缘的屏蔽。

公开(公告)号：US20070245557A1

公开(公告)日：2007-10-25

申请号：US11411555

申请日：2006-04-25

Applicant: Amanda Baer ,  Hamid Balamane ,  Michael Feldbaum ,  Ming Jiang ,  Aron Pentek

Inventor： Amanda Baer ,  Hamid Balamane ,  Michael Feldbaum ,  Ming Jiang ,  Aron Pentek

IPC: H01K3/10

CPC classification number: G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49126 ,  Y10T29/49139 ,  Y10T29/49153 ,  Y10T29/49155 ,  Y10T29/49165 ,  Y10T29/49169

Abstract: A method for forming a via in an alumina protective layer on a structure such as a magnetic write head for use in perpendicular magnetic recording. A substrate such as an alumina fill layer, magnetic shaping layer, etc. is formed with region having a contact pad formed therein. A structure such as a magnetic pole, and or magnetic trailing shield, is formed over the substrate and is covered with a thick layer of alumina. The alumina can be applied by a high deposition rate process that does not form voids or seams in the alumina layer. The alumina layer can then be planarized by a chemical mechanical polishing process (CMP) and then a mask structure, such as a photoresist mask, is formed over the alumina layer. The mask structure is formed with an opening disposed over the contact pad. A reactive ion mill is then performed to remove portions of the alumina layer that are exposed at the opening in the mask, thereby forming a via in the alumina layer. The mask can then be lifted off and an electrically conductive material can be deposited into the via. Forming the via by a subtractive method rather than by a liftoff process allows the alumina to be deposited in a manner that does not result in voids. The use of reactive ion milling allows the via to be well defined and formed with substantially vertical side walls rather than in a conical or outward spreading fashion as would be formed by other material removal processes such as wet etching.

Abstract translation: 在用于垂直磁记录的诸如磁写头的结构上的氧化铝保护层中形成通孔的方法。 在其中形成有形成有接触垫的区域形成诸如氧化铝填充层，磁性成形层等的基板。 诸如磁极和/或磁性后屏蔽的结构形成在衬底之上，并被厚层氧化铝覆盖。 可以通过在氧化铝层中不形成空隙或接缝的高沉积速率工艺来施加氧化铝。 然后可以通过化学机械抛光工艺（CMP）将氧化铝层平坦化，然后在氧化铝层上形成诸如光致抗蚀剂掩模的掩模结构。 掩模结构形成有设置在接触垫上方的开口。 然后执行反应离子研磨机以除去在掩模中的开口处暴露的部分氧化铝层，从而在氧化铝层中形成通孔。 然后可以将掩模剥离，并且可以将导电材料沉积到通孔中。 通过减法法而不是通过剥离工艺形成通孔允许以不会导致空隙的方式沉积氧化铝。 使用反应离子研磨允许通孔被良好地限定并且形成有基本垂直的侧壁，而不是以其它材料去除工艺（例如湿蚀刻）形成的锥形或向外扩展方式。

公开(公告)号：US07030035B2

公开(公告)日：2006-04-18

申请号：US10845651

申请日：2004-05-14

Applicant: Donald G. Allen ,  Richard Jule Contreras ,  Michael Feldbaum ,  Dominic Frank Truchetta

Inventor： Donald G. Allen ,  Richard Jule Contreras ,  Michael Feldbaum ,  Dominic Frank Truchetta

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01L21/6831

Abstract: To remove unwanted electrostatic charge from a substrate or substrate clamping mechanism in a plasma processing chamber following the plasma processing of the substrate, the process of shutting down the RF power supply is altered. Specifically, the present invention is a stepped RF power shut down sequence in which the RF power is lowered in a first step from full power to approximately 5 to 10 watts for a short period of time, such as approximately 1 second, and thereafter the RF power is turned off. As a result of this RF power shut down sequence, with its intermediate step, the plasma during the intermediate step acts to neutralize or discharge the electrostatic charge that has built up upon the wafer and/or clamping mechanism during full power operation. When the electrostatic charge has been removed, the wafer sticking problem is resolved.

Abstract translation: 为了在基板的等离子体处理之后的等离子体处理室中的基板或基板夹紧机构中除去不需要的静电电荷，则改变关闭RF电源的过程。 具体地说，本发明是一个步进式RF功率关闭序列，其中RF功率在第一步骤中从全功率降低到大约5到10瓦特，在短时间内，例如大约1秒，然后RF 电源关闭。 作为这种RF功率关闭顺序的结果，通过其中间步骤，中间步骤期间的等离子体用于在全功率操作期间中和或排出已经积聚在晶片和/或夹紧机构上的静电电荷。 当静电电荷被去除时，晶片粘附问题得以解决。

公开(公告)号：US20060043280A1

公开(公告)日：2006-03-02

申请号：US10930277

申请日：2004-08-30

Applicant: Michael Feldbaum ,  Hung-Chin Guthrie ,  Wipul Jayasekara ,  Aron Pentek

Inventor： Michael Feldbaum ,  Hung-Chin Guthrie ,  Wipul Jayasekara ,  Aron Pentek

IPC: B01D59/44

CPC classification number: H01L22/20 ,  H01J2237/3114 ,  H01L21/31116 ,  H01L21/32136

Abstract: A system for improving drift compensation for ion mill applications defines a reference step for purposes of time duration. The reference step is controlled by an end point detector and monitored for use with subsequent process steps. The time duration for a subsequent step is adjusted as a percentage of the reference step. A time scaling factor determines the actual duration of the subsequent step. Rather than directly using times of step duration, the system uses a percentage of the reference step for the latter step. The duration of the reference step varies depending on the tool drift. The overall duration is changed in the same proportion as the duration of the reference step, and thereby compensates for the influence of drift on the end product.

公开(公告)号：US20050255705A1

公开(公告)日：2005-11-17

申请号：US10845651

申请日：2004-05-14

Applicant: Donald Allen ,  Richard Contreras ,  Michael Feldbaum ,  Dominic Truchetta

Inventor： Donald Allen ,  Richard Contreras ,  Michael Feldbaum ,  Dominic Truchetta

IPC: C23F1/00 ,  H01L21/00 ,  H01L21/306 ,  H01L21/31 ,  H01L21/469 ,  H01L21/683

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01L21/6831

Abstract: To remove unwanted electrostatic charge from a substrate or substrate clamping mechanism in a plasma processing chamber following the plasma processing of the substrate, the process of shutting down the RF power supply is altered. Specifically, the present invention is a stepped RF power shut down sequence in which the RF power is lowered in a first step from full power to approximately 5 to 10 watts for a short period of time, such as approximately 1 second, and thereafter the RF power is turned off. As a result of this RF power shut down sequence, with its intermediate step, the plasma during the intermediate step acts to neutralize or discharge the electrostatic charge that has built up upon the wafer and/or clamping mechanism during full power operation. When the electrostatic charge has been removed, the wafer sticking problem is resolved.

Abstract translation: 为了在基板的等离子体处理之后的等离子体处理室中的基板或基板夹紧机构中除去不需要的静电电荷，则改变关闭RF电源的过程。 具体地说，本发明是一个步进式RF功率关闭序列，其中RF功率在第一步骤中从全功率降低到大约5到10瓦特，在短时间内，例如大约1秒，然后RF 电源关闭。 作为这种RF功率关闭顺序的结果，通过其中间步骤，中间步骤期间的等离子体用于在全功率操作期间中和或排出已经积聚在晶片和/或夹紧机构上的静电电荷。 当静电电荷被去除时，晶片粘附问题得以解决。