-
公开(公告)号：US20070169437A1
公开(公告)日：2007-07-26
申请号：US10587858
申请日：2005-01-20
摘要： A vial supply apparatus comprises: a vial supply part having a plurality of storage portions which store vials having different heights according to size, each storage portion comprising a rotatable endless member disposed at a predetermined interval from a partition wall, partitioning members disposed at predetermined intervals on the endless member, endless member driving means, and a supply port for dispensing a vial stored between adjacent partitioning members; a chute portion for dropping the vial dispensed from the supply port such that an opening of the vial faces upward; a robot arm for holding the vial supplied from the chute portion; and an adjustment table disposed below the robot arm, for adjusting an opening height of the vial supplied from the chute portion in accordance with the height of the vial.
摘要翻译： 小瓶供给装置包括：具有多个存储部的小瓶供给部，其具有根据尺寸存储具有不同高度的小瓶，每个存储部包括以分隔壁以预定间隔设置的可旋转环形构件，以预定间隔设置的分隔构件 在环形构件上，环形构件驱动装置和用于分配存储在相邻分隔构件之间的小瓶的供给口; 斜槽部分，用于使从所述供应口分配的小瓶下落，使得所述小瓶的开口面向上; 用于保持从斜槽部分供应的小瓶的机器人臂; 以及设置在所述机器人手臂下方的调节台，用于根据所述小瓶的高度来调节从所述滑槽部提供的所述小瓶的开口高度。
-
2.发明授权Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same 有权III族氮化物半导体生长衬底，III族氮化物半导体外延衬底，III族氮化物半导体元件和III族氮化物半导体自支撑衬底及其制造方法公开(公告)号：US08878189B2
公开(公告)日：2014-11-04
申请号：US13259788
申请日：2010-03-25
CPC分类号： H01L21/02365 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0254 , H01L21/02664
摘要： An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with AlxGa1-xN having a high Al composition, the growth temperature of which is high; a Group III nitride semiconductor growth substrate used for producing these, and a method for efficiently producing those. The present invention provides a Group III nitride semiconductor growth substrate comprising a crystal growth substrate including a surface portion composed of a Group III nitride semiconductor which contains at least Al, and a scandium nitride film formed on the surface portion are provided.
摘要翻译： 本发明的目的是提供具有良好结晶性的III族氮化物半导体外延衬底，III族氮化物半导体元件和III族氮化物半导体独立衬底，不仅AlGaN，GaN和GaInN 其生长温度为1050℃以下，同时也具有Al生成温度高的Al组分的Al x Ga 1-x N; 用于制造它们的III族氮化物半导体生长衬底及其有效生产方法。 本发明提供了一种III族氮化物半导体生长衬底，其包括晶体生长衬底，该晶体生长衬底包括由至少含有Al的III族氮化物半导体构成的表面部分和在表面部分上形成的钪氮化物膜。
-
3.发明授权III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinity 有权III族氮化物半导体生长衬底，III族氮化物半导体外延衬底，III族氮化物半导体元件，III族氮化物半导体独立式衬底，均具有改善的结晶度公开(公告)号：US08736025B2
公开(公告)日：2014-05-27
申请号：US13142115
申请日：2009-12-25
IPC分类号： H01L29/20
CPC分类号： H01L21/02491 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： An object of the present invention is to address the problems described herein and to provide a III-nitride semiconductor epitaxial substrate, a III-nitride semiconductor element, and a III-nitride semiconductor freestanding substrate, which have good crystallinity, not only with AlGaN, GaN, or GaInN, the growth temperature of which is at or below 1050° C., but also with AlxGa1-xN, the growth temperature of which is high and which has a high Al composition, as well as a III-nitride semiconductor growth substrate for fabricating these and a method for efficiently fabricating these. The invention is characterized by being equipped with: a crystal growth substrate, at least the surface portion of which substrate includes a III-nitride semiconductor containing Al; and a single metallic layer formed on the surface portion, the single metallic layer being made from Zr or Hf.
摘要翻译： 本发明的一个目的是解决本文所描述的问题，并提供具有良好结晶度的III族氮化物半导体外延衬底，III族氮化物半导体元件和III族氮化物半导体独立衬底，不仅与AlGaN， GaN或GaInN，其生长温度为或低于1050℃，而且还具有Al x Ga 1-x N，其生长温度高并且具有高Al组成，以及III族氮化物半导体生长 用于制造这些的基板和用于有效地制造这些的方法。 本发明的特征在于配备有：晶体生长衬底，至少其表面部分包括含有Al的III族氮化物半导体; 以及形成在表面部分上的单一金属层，该单一金属层由Zr或Hf制成。
-
公开(公告)号：US07575129B2
公开(公告)日：2009-08-18
申请号：US10587858
申请日：2005-01-20
IPC分类号： B65H31/20
摘要： A vial supply apparatus comprises: a vial supply part having a plurality of storage portions which store vials having different heights according to size, each storage portion comprising a rotatable endless member disposed at a predetermined interval from a partition wall, partitioning members disposed at predetermined intervals on the endless member, endless member driving means, and a supply port for dispensing a vial stored between adjacent partitioning members; a chute portion for dropping the vial dispensed from the supply port such that an opening of the vial faces upward; a robot arm for holding the vial supplied from the chute portion; and an adjustment table disposed below the robot arm, for adjusting an opening height of the vial supplied from the chute portion in accordance with the height of the vial.
摘要翻译： 小瓶供给装置包括：具有多个存储部的小瓶供给部，其具有根据尺寸存储具有不同高度的小瓶，每个存储部包括以分隔壁以预定间隔设置的可旋转环形构件，以预定间隔设置的分隔构件 在环形构件上，环形构件驱动装置和用于分配存储在相邻分隔构件之间的小瓶的供给口; 斜槽部分，用于使从所述供应口分配的小瓶下落，使得所述小瓶的开口面向上; 用于保持从斜槽部分供应的小瓶的机器人臂; 以及设置在所述机器人手臂下方的调节台，用于根据所述小瓶的高度来调节从所述滑槽部提供的所述小瓶的开口高度。
-
公开(公告)号：US20070163133A1
公开(公告)日：2007-07-19
申请号：US10587486
申请日：2005-01-20
IPC分类号： G01C9/00
CPC分类号： G07F13/10 , G07F11/44 , G07F11/70 , G07F17/0092
摘要： A device (1) for containing and dispensing tablets, wherein vial bottles (3) filled with tablets wait in waiting spaces (701a, b, c) and the vial bottles (3) are taken out from the waiting spaces (701a, b, c). A plurality of pair of holding members (703a, b) facing each other for holding the bodies of the vial bottles (3) are installed in the waiting spaces (701a, b, c), and stock sensors (710) of the same quantity as the pair of holding members (703a, b) are installed to check for each pair of holding members whether the vial bottles are held on the pair of holding members (703a, b) or not.
摘要翻译： 一种用于容纳和分配片剂的装置（1），其中填充有片剂的小瓶瓶（3）在等待空间（701a，b，c）中等待，并且小瓶瓶（3）从等待空间（701a， b，c）。 在等待空间（701a，b，c）中安装有用于保持小瓶瓶（3）的主体的彼此面对的多对保持构件（703a，b），并且 安装与一对保持构件（703a，b）相同的量来检查每对保持构件，不管瓶瓶是否保持在一对保持构件（703a，b）上。
-
公开(公告)号：US20070158357A1
公开(公告)日：2007-07-12
申请号：US10587203
申请日：2005-01-19
摘要： A medicine storing and dispensing apparatus includes: a cap container 501 storing a plurality of caps 2 for closing openings of vial bottles 3 and having a plurality of slits 508 formed on the bottom surface thereof; a plurality of cap stirring members 511 formed in a rotating shaft 509 in the state of protruding inside the cap container 501 through-each of the slits 508; a cap stirring member 502 for steering the caps 2 by the stirring sections 510 through rotational driving; and a cap pathway 503 which continues to the cap container 501, has a clearance allowing only one cap 2 to pass through, and which is inclined downward so as to align the passing caps 2.
摘要翻译： 一种药物储存和分配装置，包括：容器盖501，其容纳用于封闭小瓶瓶3的开口的多个盖子2，并且具有形成在其底面上的多个狭缝508; 形成在旋转轴509中的多个帽搅拌构件511，其通过每个狭缝508在盖容器501内突出的状态; 用于通过旋转驱动通过搅拌部510转动盖2的盖子搅拌构件502; 并且连接到盖容器501的盖通路503具有仅允许一个盖2穿过的间隙，并且向下倾斜以使通过盖2对准。
-
公开(公告)号：US08082957B2
公开(公告)日：2011-12-27
申请号：US10587486
申请日：2005-01-20
IPC分类号： B65B43/42
CPC分类号： G07F13/10 , G07F11/44 , G07F11/70 , G07F17/0092
摘要： A device (1) for containing and dispensing tablets, wherein vial bottles (3) filled with tablets wait in waiting spaces (701a, b, c) and the vial bottles (3) are taken out from the waiting spaces (701a, b, c). A plurality of pairs of holding members (703a, b) facing each other for holding the bodies of the vial bottles (3) are installed in the waiting spaces (701a, b, c). Also, stock sensors (710) in the same quantity as the pair of holding members (703a, b) are installed to check for each pair of holding members whether a vial bottle is held on the pair of holding members (703a, b) or not.
摘要翻译： 一种用于容纳和分配片剂的装置（1），其中填充有片剂的小瓶瓶（3）在等待空间（701a，b，c）中等待，并且小瓶瓶（3）从等待空间（701a，b， C）。 多个成对的保持构件（703a，b）安装在等候空间（701a，b，c）中，面对彼此以保持小瓶瓶（3）的主体。 此外，安装与一对保持构件（703a，b）相同数量的储存传感器（710），以检查每对保持构件，瓶型瓶是否保持在一对保持构件（703a，b）上，或 不。
-
公开(公告)号：US07549266B2
公开(公告)日：2009-06-23
申请号：US10586945
申请日：2005-01-17
IPC分类号： B65B5/08
CPC分类号： G07F11/70 , G07F11/165 , G07F13/10 , G07F17/0092
摘要： A compact tablet storage and take-out apparatus capable of quickly discharging and filing tablets. The tablet storage and take-out apparatus includes: a cylindrical drum; a drum driving device; a plurality of tablet cassette mounting bases fitted to an outer surface of the drum; tablet cassettes which are detachably mounted on the tablet cassette mounting bases; and a guide passage for guiding discharged tablets inside the drum. Moreover, the apparatus includes a transfer robot provided inside the drum so as to be liftable and also rotatable. The transfer robot is operable to transfers a vial between a delivery position located outside an opening formed in an upper end or a lower end of the drum and a tablet filling position. The position of at least one of the drum and the transfer robot is controlled so that an opening of the vial held by the transfer robot agrees with an outlet of the guide passage.
摘要翻译： 一种紧凑的片剂储存和取出装置，能够快速排出和归档片剂。 片剂储存和取出装置包括：圆筒形鼓; 鼓驱动装置; 多个安装在所述滚筒的外表面上的平板盒安装基座; 可拆卸地安装在药片盒安装基座上的平板盒; 以及用于引导滚筒内的排出片剂的引导通道。 此外，该设备包括设置在滚筒内部以便可升降并且也可旋转的传送机器人。 传送机器人可操作以在位于鼓的上端或下端的开口之外的输送位置和药片填充位置之间传送小瓶。 控制滚筒和传送机器人中的至少一个的位置，使得由传送机器人保持的小瓶的开口与引导通道的出口一致。
-
公开(公告)号：US20070157551A1
公开(公告)日：2007-07-12
申请号：US10586945
申请日：2005-01-17
IPC分类号： B65B5/10
CPC分类号： G07F11/70 , G07F11/165 , G07F13/10 , G07F17/0092
摘要： The present invention provides a compact tablet storage and take-out apparatus capable of quickly discharging and filing tablets. The tablet storage and take-out apparatus includes: a cylindrical drum; drum driving means; a plurality of tablet cassette mounting bases (341) which are fitted to an outer surface of the drum; tablet cassettes which are detachably mounted on the tablet cassette mounting bases; and a guide passage which guides inside the drum tablets discharged from the tablet cassettes. Moreover, the apparatus includes: a transfer robot which is provided inside the drum so as to be liftable and also rotatable, and which transfers the vial held by arms between a delivery position located outside an opening formed in an upper end or a lower end of the drum and a tablet filling position where the tablets discharged through the guide passage are filled. The position of at least one of the drum and the transfer robot is controlled so that an opening of the vial held by the transfer robot agrees with an outlet of the guide passage.
摘要翻译： 本发明提供一种能够快速排出片剂的小型片剂储存和取出装置。 片剂储存和取出装置包括：圆筒形鼓; 鼓驱动手段; 多个平板盒安装座（341），其安装在所述滚筒的外表面上; 可拆卸地安装在药片盒安装基座上的平板盒; 以及引导通道，其引导从片剂盒排出的滚筒片内。 此外，该装置包括：传送机器人，其设置在滚筒内部以便可升降并且也可旋转，并且将由手臂保持的小瓶传送到位于形成在上端或下端的开口外侧的传送位置之间 鼓和片剂填充位置，其中通过引导通道排出的药片被填充。 控制滚筒和传送机器人中的至少一个的位置，使得由传送机器人保持的小瓶的开口与引导通道的出口一致。
-
10.发明申请SUBSTRATE FOR FILM GROWTH OF GROUP III NITRIDES, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE USING THE SAME 审中-公开III类氮化物的膜生长用基板，其制造方法以及使用其的半导体器件公开(公告)号：US20070045662A1
公开(公告)日：2007-03-01
申请号：US11467319
申请日：2006-08-25
IPC分类号： H01L31/00
CPC分类号： H01L21/0242 , H01L21/0237 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L21/0262
摘要： A substrate for film growth of group III nitride, a method of manufacturing the same, and a semiconductor device using the same are provided which can make an AlN thin film relatively thin without cloudiness, as well as cracks and pits are reduced in a group III nitride thin film layer constituting the device grown thereon. A substrate 10 for film growth of group III nitride is constituted which includes a substrate material 11 and an AlN thin film 12 formed on said substrate as a buffer layer, and a semiconductor device comprising group III nitride thin film is formed thereon, and the AlN thin film is formed at plural steps at least one of which changes film growth conditions during the film growth.
摘要翻译： 提供了III族氮化物的膜生长用基板及其制造方法以及使用其的半导体装置，能够使AlN薄膜相对薄而没有混浊，并且III组氮化物的裂纹和凹坑减少 构成其上生长的器件的氮化物薄膜层。 构成了用于III族氮化物的膜生长的衬底10，其包括衬底材料11和形成在所述衬底上的作为缓冲层的AlN薄膜12，并且在其上形成包含III族氮化物薄膜的半导体器件，并且AlN 在多个步骤中形成薄膜，其中至少一个在膜生长期间改变膜生长条件。
-
-
-
-
-
-
-
-
-
搜索结果
13 条记录 (耗时 0.02 秒)
