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    Light emitting diode of improved current blocking and light extraction structure
    1.
    发明授权
    Light emitting diode of improved current blocking and light extraction structure 失效
    具有改善电流阻塞和光提取结构的发光二极管

    公开(公告)号：US06420732B1

    公开(公告)日：2002-07-16

    申请号：US09604546

    申请日：2000-06-26

    申请人： Hsing Kung ,  Mark Devito ,  Chin-Wang Tu

    发明人： Hsing Kung ,  Mark Devito ,  Chin-Wang Tu

    IPC分类号： H01L2715

    CPC分类号： H01L33/145 ,  H01L33/02 ,  H01L33/382 ,  H01L2933/0083

    摘要： Structures for light emitting diodes are disclosed, which include improved current blocking and light extraction structures. The diodes typically include a substrate formed on a first electrode, a first confining layer of a first conductivity type formed on the substrate, an active region formed on the first confining layer, a second confining layer of a second conductivity type formed on the active region, and a window layer of the second conductivity type formed on the second confining layer. A contact layer of the second conductivity type is formed on the window layer for making ohmic contact, a conductive oxide layer is formed on the contact layer, and a second electrode is formed on the conductive oxide layer. The conductive oxide layer typically includes a central portion located below the second top electrode, which extends into the LED structure, typically beyond the contact layer and into the window layer, or even beyond the window layer, such as into the second confining layer. The improved LED structures preferably include a higher resistive or reverse biased pattern, typically built on or within the substrate, approximately below the second electrode, to further assist the current blocking function. The light emitting diodes preferably include one or more holes which are defined in the conductive oxide layer, or within both the conductive oxide layer and the contact layer, to promote the transmission of light from the upper surface of the light emitting diode. A Distributed Bragg Reflector is also preferably provided between the lower substrate and the first confining layer, to reduce light absorption within the substrate, and to promote efficient light extraction from the top of the LED structure.

    摘要翻译： 公开了用于发光二极管的结构，其包括改进的电流阻挡和光提取结构。 二极管通常包括形成在第一电极上的衬底，形成在衬底上的第一导电类型的第一限制层，形成在第一限制层上的有源区，形成在有源区上的第二导电类型的第二约束层 以及形成在第二限制层上的第二导电类型的窗口层。 第二导电类型的接触层形成在用于进行欧姆接触的窗口层上，在接触层上形成导电氧化物层，在导电氧化物层上形成第二电极。 导电氧化物层通常包括位于第二顶部电极下方的中心部分，该中心部分延伸到LED结构中，通常超出接触层并进入窗口层，或者甚至超出窗口层，例如进入第二限制层。 改进的LED结构优选地包括较高的电阻或反向偏压图案，通常建立在衬底上或衬底内，大致低于第二电极，以进一步辅助电流阻挡功能。 发光二极管优选地包括限定在导电氧化物层中的导电氧化物层和接触层中的一个或多个孔，以促进来自发光二极管的上表面的光的透射。 分布布拉格反射器还优选地设置在下基板和第一限制层之间，以减少基板内的光吸收，并且从LED结构的顶部促进有效的光提取。

    Semiconductor lasers utilizing AlGaAsP
    3.
    发明申请
    Semiconductor lasers utilizing AlGaAsP 审中-公开
    利用AlGaAsP的半导体激光器

    公开(公告)号：US20070053396A1

    公开(公告)日：2007-03-08

    申请号：US11212420

    申请日：2005-08-24

    申请人： Mark DeVito ,  Paul Crump ,  Jun Wang ,  Weimin Dong ,  Michael Grimshaw

    发明人： Mark DeVito ,  Paul Crump ,  Jun Wang ,  Weimin Dong ,  Michael Grimshaw

    IPC分类号： H01S3/14

    CPC分类号： H01S5/343 ,  B82Y20/00

    摘要： A means of controlling the stress in a laser diode structure through the use of AlGaAsP is provided. Depending upon the amount of phosphorous in the material, it can be used to either match the lattice constant of GaAs, thus forming a strainless structure, or mismatch the lattice constant of GaAs, thereby adding tensile stress to the structure. Tensile stress can be used to mitigate the compressive stress due to material mismatches within the structure (e.g., a highly strained compressive quantum well), or due to the heat sink bonding procedure.

    摘要翻译： 提供了通过使用AlGaAsP来控制激光二极管结构中的应力的手段。 取决于材料中磷的含量，它可以用于匹配GaAs的晶格常数，从而形成无应变结构，或使GaAs的晶格常数失配，从而为结构增加拉应力。 可以使用拉伸应力来减轻由于结构内的材料错配（例如，高应变压缩量子阱）或由于散热器结合过程引起的压缩应力。