公开(公告)号：US20240102170A1

公开(公告)日：2024-03-28

申请号：US18370752

申请日：2023-09-20

Applicant: LoMaRe Chip Technology Changzhou Co., Ltd. ,  LoMaRe Technologies Limited

Inventor： Fengzhi Yu ,  Xudong Sun ,  Andrei Paul Mihai ,  Bin Zou ,  Jan Zemen ,  Kapildeb Dolui

IPC: C23C16/56 ,  C23C16/30 ,  H01G7/06 ,  H01L21/02

CPC classification number: C23C16/56 ,  C23C16/30 ,  H01G7/06 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/0234 ,  H01L28/55

Abstract: The present invention provides a high-crystallinity barium titanate film structure, a method of preparation and an application thereof, and relates to the field of materials and devices. The method includes the steps of depositing, on a substrate, a barium titanate layer with a (001) or (111) crystal orientation by atomic layer deposition in a high vacuum environment and at a low temperature of 450° C. or below, wherein a Ba/Ti ratio in the barium titanate layer is 0.9-1.5; and performing plasma annealing treatment on the barium titanate layer at a low temperature of 450° C. or below without breaking vacuum to form a high-crystallinity barium titanate layer having the (001) or (111) crystal orientation. The film structure may further comprise top and bottom electrodes formed above and below the barium titanate layer. The present invention solves the problem that an existing method for obtaining a crystalline BTO film is not applicable to back-end of line (BEOL) integration processes.