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16 条记录 (耗时 0.017 秒)

    Development of positive-working photoresist compositions
    1.
    发明授权
    Development of positive-working photoresist compositions 失效
    正性光致抗蚀剂组合物的开发

    公开(公告)号：US4711836A

    公开(公告)日：1987-12-08

    申请号：US895628

    申请日：1986-08-11

    申请人： Lawrence Ferreira

    发明人： Lawrence Ferreira

    IPC分类号： G03F7/32 ,  G03C5/00 ,  G03F7/26

    CPC分类号： G03F7/322

    摘要： Disclosed is an aqueous developing solution containing a quaternary ammonium hydroxide developing agent, and as an additive an effective amount of a select compound which is either 1,3,5-trihydroxy benzene, 4-methylesculetin or a novolak-type resin. The aqueous developing solution is particularly useful in developing an imagewise-exposed layer of a positive-working photoresist composition containing a novolak-type resin and a photosensitive agent. In such application, it has been found that the developing solution more effectively removes the exposed portions of the photoresist composition without leaving a residue of exposed photoresist composition at the interface of the edges of the unexposed portions of the photoresist composition and the oxidized silicon substrate.

    摘要翻译： 公开了含有季铵氢氧化物显影剂的水性显影液，作为添加剂，作为添加剂，可以使用有效量的选自1,3,5-三羟基苯，4-甲基鞘氨醇或酚醛清漆型树脂的化合物。 含水显影液特别可用于显影含有酚醛清漆型树脂和感光剂的正性光致抗蚀剂组合物的成像曝光层。 在这种应用中，已经发现显影溶液更有效地除去光致抗蚀剂组合物的暴露部分，而不在光致抗蚀剂组合物的未曝光部分的边缘与氧化的硅衬底之间的界面处留下曝光的光致抗蚀剂组合物残留物。

    Non-corrosive cleaning compositions for removing etch residues
    2.
    发明授权
    Non-corrosive cleaning compositions for removing etch residues 有权
    用于去除蚀刻残留物的非腐蚀性清洁组合物

    公开(公告)号：US07935665B2

    公开(公告)日：2011-05-03

    申请号：US10421506

    申请日：2003-04-24

    申请人： Vincent G. Leon ,  Michelle Elderkin ,  Lawrence Ferreira

    发明人： Vincent G. Leon ,  Michelle Elderkin ,  Lawrence Ferreira

    IPC分类号： C11D1/00 ,  C11D3/20 ,  C11D3/26 ,  C11D3/43

    CPC分类号： H01L21/02063 ,  C11D7/265 ,  C11D7/28 ,  C11D7/32 ,  C11D7/3245 ,  C11D7/34 ,  C11D11/0041 ,  C11D11/0047 ,  C11D11/007 ,  G03F7/42 ,  G03F7/422 ,  H01L21/02071

    摘要： A non-corrosive cleaning composition that is aqueous-based, non-hazardous and will not harm the environment and is useful primarily for removing both fresh and aged plasma etch residues from a substrate. The composition comprises (a) water; and (b) a synergistic combination of at least one tricarboxylic acid and at least one carboxylic acid. Preferably, the at least one carboxylic acid has a pKa value ranging from 3 to 6. Also, a method for removing etch residues from a substrate. The method includes the steps of (a) providing a substrate with etch residue; and (b) contacting the substrate with a cleaning composition comprising water; and a synergistic combination of at least one tricarboxylic acid and at least one carboxylic acid.

    摘要翻译： 一种非腐蚀性清洁组合物，其是基于水性的，无危害的并且不会对环境造成伤害，并且主要用于从底物中除去新鲜和老化的等离子体蚀刻残留物。 组合物包含（a）水; 和（b）至少一种三羧酸和至少一种羧酸的协同组合。 优选地，所述至少一种羧酸具有3至6的pKa值。另外，用于从基底去除蚀刻残留物的方法。 该方法包括以下步骤：（a）向衬底提供蚀刻残留物; 和（b）使基材与包含水的清洁组合物接触; 和至少一种三羧酸和至少一种羧酸的协同组合。

    t-butyl cinnamate polymers and their use in photoresist compositions
    3.
    发明授权
    t-butyl cinnamate polymers and their use in photoresist compositions 失效
    肉桂酸叔丁酯聚合物及其在光致抗蚀剂组合物中的用途

    公开(公告)号：US06312870B1

    公开(公告)日：2001-11-06

    申请号：US09619180

    申请日：2000-07-19

    申请人： Sanjay Malik ,  Lawrence Ferreira ,  Jeffrey Eisele ,  Whewell Allyn

    发明人： Sanjay Malik ,  Lawrence Ferreira ,  Jeffrey Eisele ,  Whewell Allyn

    IPC分类号： G03C173

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111

    摘要： A resist composition containing a polymer of t-butyl cinnamate, a photacid generator, and a solvent. Optionally, the resist composition may include a basic compound. The polymer of t-butyl cinnamate has the monomeric units: wherein a=0.3 to 0.9, b=0.1 to 0.7, and c=0 to 0.3; R1=H, methyl, or CH2OR4; R4=H or C1-C4 alkyl group; R2=H, methyl, CH2OR4, CH2CN, or CH2X; X=Cl, I, Br, F, or CH2COOR5; R5=C1-C4 alkyl group; and R3=isobomyl, cyclohexyl methyl, cyclohexyl ethyl, benzyl, or phenethyl.

    摘要翻译： 含有肉桂酸叔丁酯聚合物，光电酸产生剂和溶剂的抗蚀剂组合物。 任选地，抗蚀剂组合物可以包括碱性化合物。肉桂酸叔丁酯的聚合物具有单体单元：其中a = 0.3至0.9，b = 0.1至0.7，c = 0至0.3; R1 = H，甲基或CH2OR4; R4 = H或C1-C4烷基; R2 = H，甲基，CH2OR4，CH2CN或CH2X; X = Cl，I，Br，F或CH 2 COOR 5; R5 = C1-C4烷基; 并且R 3 =异丁基，环己基甲基，环己基乙基，苄基或苯乙基。

    Method of purifying photoacid generators for use in photoresist compositions
    10.
    发明授权
    Method of purifying photoacid generators for use in photoresist compositions 失效
    光致抗蚀剂组合物中使用的光酸发生剂的纯化方法

    公开(公告)号：US06200480B1

    公开(公告)日：2001-03-13

    申请号：US09006409

    申请日：1998-01-13

    申请人： Lawrence Ferreira ,  Sanjay Malik

    发明人： Lawrence Ferreira ,  Sanjay Malik

    IPC分类号： B01D1504

    CPC分类号： G03F7/0045 ,  B01J41/07 ,  B01J45/00

    摘要： The present invention is directed to a process of removing trace acidic impurities from an impure solution of photoacid generating compounds in a solvent, comprising contacting an impure solution of at least one photoacid generating compound containing trace amounts of acidic impurities with an amine-containing ion exchange resin for a sufficient amount of time to remove substantially all of the acidic impurities from the impure solution, thereby producing a pure solution of at least one photoacid generating compounds substantially free of trace acidic impurities. The invention is also directed to a solution of at least one photoacid generating compound substantially free of trace acidic impurities made by the above process.

    摘要翻译： 本发明涉及一种从溶剂中产生光致酸化合物的不纯溶液中除去痕量酸性杂质的方法，包括使含至少一种含有微量酸性杂质的光产酸化合物的不纯溶液与含胺离子交换 树脂足够的时间以从不纯的溶液中除去基本上所有的酸性杂质，从而产生至少一种基本上不含痕量酸性杂质的光产酸化合物的纯溶液。 本发明还涉及至少一种基于上述方法制备的基本上不含微量酸性杂质的光产酸化合物的溶液。