公开(公告)号：US20090020415A1

公开(公告)日：2009-01-22

申请号：US11879136

申请日：2007-07-16

Applicant: Michael Gutkin ,  Alexander Bizyukov ,  Vladimir Sleptsov ,  Ivan Bizyukov ,  Konstantin Sereda

Inventor： Michael Gutkin ,  Alexander Bizyukov ,  Vladimir Sleptsov ,  Ivan Bizyukov ,  Konstantin Sereda

IPC: C23C14/46

CPC classification number: C23C14/3442 ,  C23C14/16 ,  H01J37/3266 ,  H01J37/34 ,  H01J2237/152 ,  H01J2237/3146

Abstract: The present invention discloses technology for thin film ion beam sputter deposition on a substrate. The apparatus is a self-contained ion beam deposition source, which can be attached to or positioned inside of a vacuum chamber where substrates are located. This source consists of one or more ion beam sources combined with one or more sputtering targets and a unified magnetic field acting as a devise controlling delivery of the charged particles to the treated by the Iontron workpiece (substrate). The ion beam emits ion beams toward the target that generate sputtered particles directed toward the substrate, thus creating a thin film on the surface of the substrate. The target can be electrically biased, not biased or floating, thus allowing for modulation of the location upon which the charged ions impinge the target. Additionally, the position of the target can be adjusted relatively to the ion beam.

Abstract translation: 本发明公开了一种薄膜离子束溅射沉积在基片上的技术。 该装置是独立的离子束沉积源，其可以附接到或位于基板所在的真空室内部。 该源包括与一个或多个溅射靶组合的一个或多个离子束源和用作控制通过Iontron工件（衬底）处理的带电粒子的设计的统一磁场。 离子束朝向靶产生离子束，产生朝向衬底的溅射颗粒，从而在衬底的表面上产生薄膜。 目标可以是电偏置的，而不是偏置的或浮动的，从而允许调制带电离子撞击目标的位置。 此外，可以相对于离子束来调整目标的位置。

公开(公告)号：US20080191629A1

公开(公告)日：2008-08-14

申请号：US11704476

申请日：2007-02-09

Applicant: Michael Gutkin ,  Alexander Bizyukov ,  Vladimir Sleptsov ,  Ivan Bizyukov ,  Konstantin Sereda

Inventor： Michael Gutkin ,  Alexander Bizyukov ,  Vladimir Sleptsov ,  Ivan Bizyukov ,  Konstantin Sereda

IPC: H01J27/00

CPC classification number: H01J27/143 ,  H01J3/20

Abstract: A focused ion source based on a Hall thruster with closed loop electron drift and a narrow acceleration zone is disclosed. The ion source of the invention has an ion focusing system consisting of two parts. The first part is a ballistic focusing system in which the aperture through which the beam exits the discharge channel is tilted. The second is a magnetic focusing system which focuses the ion beam exiting the discharge channel by canceling a divergent magnetic field present at the aperture through which the beam exits the discharge channel. The ion source of the invention also has an in-line hollow cathode capable of forming a self-sustaining discharge. The invention further reduces substrate contamination, while increasing the processing rate. Further the configuration disclosed allows the ion source to operate at lower operational gas pressures.

Abstract translation: 公开了一种基于具有闭环电子漂移的霍尔推进器和窄加速区的聚焦离子源。 本发明的离子源具有由两部分组成的离子聚焦系统。 第一部分是一种弹道聚焦系统，其中光束离开排放通道的孔倾斜。 第二个是磁聚焦系统，其通过消除光束离开放电通道的开口处的发散磁场来聚焦离开放电通道的离子束。 本发明的离子源还具有能够形成自持放电的直列空心阴极。 本发明进一步降低了衬底污染，同时提高了处理速度。 此外，所公开的配置允许离子源在较低的工作气体压力下操作。

公开(公告)号：US07622721B2

公开(公告)日：2009-11-24

申请号：US11704476

申请日：2007-02-09

Applicant: Michael Gutkin ,  Alexander Bizyukov ,  Vladimir Sleptsov ,  Ivan Bizyukov ,  Konstantin Sereda

Inventor： Michael Gutkin ,  Alexander Bizyukov ,  Vladimir Sleptsov ,  Ivan Bizyukov ,  Konstantin Sereda

IPC: H01J27/02 ,  G21K1/00

CPC classification number: H01J27/143 ,  H01J3/20

Abstract: A focused ion source based on a Hall thruster with closed loop electron drift and a narrow acceleration zone is disclosed. The ion source of the invention has an ion focusing system consisting of two parts. The first part is a ballistic focusing system in which the aperture through which the beam exits the discharge channel is tilted. The second is a magnetic focusing system which focuses the ion beam exiting the discharge channel by canceling a divergent magnetic field present at the aperture through which the beam exits the discharge channel. The ion source of the invention also has an in-line hollow cathode capable of forming a self-sustaining discharge. The invention further reduces substrate contamination, while increasing the processing rate. Further the configuration disclosed allows the ion source to operate at lower operational gas pressures.

Abstract translation: 公开了一种基于具有闭环电子漂移的霍尔推进器和窄加速区的聚焦离子源。 本发明的离子源具有由两部分组成的离子聚焦系统。 第一部分是一种弹道聚焦系统，其中光束离开排放通道的孔倾斜。 第二个是磁聚焦系统，其通过消除光束离开放电通道的开口处的发散磁场来聚焦离开放电通道的离子束。 本发明的离子源还具有能够形成自持放电的直列空心阴极。 本发明进一步降低了衬底污染，同时提高了处理速度。 此外，所公开的配置允许离子源在较低的工作气体压力下操作。