公开(公告)号：US20070181981A1

公开(公告)日：2007-08-09

申请号：US11349608

申请日：2006-02-08

申请人： Neal Hollenbeck ,  Kenneth Haddad ,  William Roeckner

发明人： Neal Hollenbeck ,  Kenneth Haddad ,  William Roeckner

IPC分类号： H01L23/552

CPC分类号： H01L23/585 ,  H01L23/60 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： An edge seal structure and fabrication method are described. The edge seal structure includes a high impedance substrate containing a base material and a grounded floating edge seal that is on the substrate but is isolated from the base material. The edge seal contacts a first doped well in the substrate that has the same conductivity type as and is more heavily doped than the base material. The first doped well is in a second doped well that has a different conductivity type than the first doped well. The first and second doped wells and the base material form back-to-back series connected diodes. The wells are effectively connected to power and ground such that the diodes are reverse-biased. The edge seal is formed by a stack of conductive layers, at least some of which are surrounded by a stack of insulating layers.

摘要翻译： 描述了边缘密封结构和制造方法。 边缘密封结构包括含有基材的高阻抗衬底和位于衬底上但与基底材料隔离的接地浮动边缘密封。 边缘密封接触衬底中的第一掺杂阱，其具有与基底材料相同的导电类型和比基底材料更重的掺杂。 第一掺杂阱位于具有与第一掺杂阱不同的导电类型的第二掺杂阱中。 第一和第二掺杂阱和基体材料形成背对背串联连接的二极管。 这些阱有效地连接到电源和接地，使得二极管被反向偏置。 边缘密封由一叠导电层形成，其中至少一些被一叠绝缘层包围。