-
公开(公告)号：US06495305B1
公开(公告)日：2002-12-17
申请号：US09679661
申请日：2000-10-04
IPC分类号： G03F7004
CPC分类号： G03F7/091 , Y10S430/108
摘要： Anti-reflective coatings formed from new polymers and having high etch rates are provided. Broadly, the coatings are formed from a polymer binder and a light attenuating compound. The polymer binder has halogen atoms bonded thereto, preferably to functional groups on the polymer binder rather than to the polymer backbone. Preferred polymer binders comprise acrylic polymers while it is preferred that the halogenated functional groups of the polymer binders be dihalogenated, and more preferably trihalogenated, with chlorine, fluorine, or bromine atoms.
-
2.发明授权公开(公告)号：US07425399B2
公开(公告)日：2008-09-16
申请号：US10530349
申请日：2003-10-08
申请人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Nakayama , Yasuo Kawamura
发明人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Nakayama , Yasuo Kawamura
IPC分类号： G03C1/825 , C07D251/30 , C07D251/72
CPC分类号： H01L21/0276 , G03F7/038 , G03F7/091 , Y10S430/106
摘要： There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.
摘要翻译： 提供了一种用于形成用于抗反射涂层的抗反射涂层的组合物，其在用于制造半导体器件的波长处具有良好的吸收，其对光反射具有高保护效果，其具有高的干蚀刻速率 与光致抗蚀剂层相比。 具体地，用于形成抗反射涂层的组合物含有在氮原子上具有羟烷基结构作为取代基的三嗪三酮化合物，低聚物化合物或高分子化合物。
-
3.发明授权公开(公告)号：US07425347B2
公开(公告)日：2008-09-16
申请号：US10491954
申请日：2002-10-04
CPC分类号： C08L63/00 , C08G59/1455 , C08G59/18 , C08G59/3254 , C08G2650/56 , C08L33/00 , C08L71/00 , C09D161/06 , G03F7/091 , H01L21/0276 , Y10T428/31511 , Y10T428/31855 , C08L2666/02 , C08L2666/04
摘要： The present invention relates to a composition for forming anti-reflective coating for use in a lithography process in manufacture of a semiconductor device which comprises polymer (A) having a weight average molecular weight of 5,000 or less, and a polymer (B) having a weight average molecular weight of 20,000 or more. The composition provides an anti-reflective coating for use in a lithography which is excellent in step coverage on a substrate with an irregular surface, such as hole or trench, has a high anti-reflection effect, causes no intermixing with a resist layer, provides an excellent resist pattern, and has a higher dry etching rate compared with the resist layer.
摘要翻译： 本发明涉及用于制造半导体器件的光刻工艺中用于形成抗反射涂层的组合物，该半导体器件包括重均分子量为5,000以下的聚合物（A）和具有重均分子量为 重均分子量为20,000以上。 该组合物提供了用于光刻中的抗反射涂层，其在具有不规则表面的基底（例如孔或沟槽）上的阶梯覆盖性优异，具有高的抗反射效果，不会与抗蚀剂层混合，提供 抗蚀剂图案优异，并且与抗蚀剂层相比具有更高的干蚀刻速率。
-
公开(公告)号：US20050175927A1
公开(公告)日：2005-08-11
申请号：US10520461
申请日：2003-07-11
IPC分类号： G03F7/11 , C08K5/00 , C08L61/24 , C08L101/00 , G03F7/09 , H01L21/027 , G03F7/00 , G03F7/004
CPC分类号： G03F7/091 , H01L21/0276 , Y10S430/151
摘要： There is provided a composition for forming anti-reflective coating containing a urea compound substituted by hydroxyalkyl group or alkoxyalkyl group, and preferably a light absorbing compound and/or a light absorbing resin; a method of forming a anti-reflective coating for a semiconductor device by use of the composition; and a process for manufacturing a semiconductor device by use of the composition. The composition according to the present invention exhibits a good light-absorption to a light having a wavelength used for manufacturing a semiconductor device. Therefore, the composition exerts a high protection effect against light reflection, and has a high dry etching rate compared with photoresist layers.
摘要翻译： 提供一种用于形成抗羟基烷基或烷氧基烷基取代的尿素化合物的抗反射涂层的组合物，优选光吸收性化合物和/或光吸收树脂; 通过使用该组合物形成用于半导体器件的抗反射涂层的方法; 以及使用该组合物制造半导体器件的方法。 根据本发明的组合物对具有用于制造半导体器件的波长的光表现出良好的光吸收。 因此，该组合物对光反射具有高保护效果，与光致抗蚀剂层相比具有高的干蚀刻速率。
-
5.发明申请公开(公告)号：US20050008964A1
公开(公告)日：2005-01-13
申请号：US10491954
申请日：2002-10-04
IPC分类号： C08G59/16 , C08G59/18 , C08G59/32 , C08L33/00 , C08L63/00 , C08L71/00 , C09D161/06 , G02B1/11 , G02B1/111 , G03F7/09 , H01L21/027 , G03C1/76 , H01L21/4763
CPC分类号： C08L63/00 , C08G59/1455 , C08G59/18 , C08G59/3254 , C08G2650/56 , C08L33/00 , C08L71/00 , C09D161/06 , G03F7/091 , H01L21/0276 , Y10T428/31511 , Y10T428/31855 , C08L2666/02 , C08L2666/04
摘要： The present invention relates to a composition for forming anti-reflective coating for use in a lithography process in manufacture of a semiconductor device which comprises polymer (A) having a weight average molecular weight of 5,000 or less, and a polymer (B) having a weight average molecular weight of 20,000 or more. The composition provides an anti-reflective coating for use in a lithography which is excellent in step coverage on a substrate with an irregular surface, such as hole or trench, has a high anti-reflection effect, causes no intermixing with a resist layer, provides an excellent resist pattern, and has a higher dry etching rate compared with the resist layer.
摘要翻译： 本发明涉及用于制造半导体器件的光刻工艺中用于形成抗反射涂层的组合物，该半导体器件包括重均分子量为5,000以下的聚合物（A），和具有 重均分子量为20,000以上。 该组合物提供了用于光刻中的抗反射涂层，其在具有不规则表面的基底（例如孔或沟槽）上的阶梯覆盖性优异，具有高的抗反射效果，不会与抗蚀剂层混合，提供 抗蚀剂图案优异，并且与抗蚀剂层相比具有更高的干蚀刻速率。
-
公开(公告)号：US20060290429A1
公开(公告)日：2006-12-28
申请号：US10530349
申请日：2003-10-08
申请人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Kanayama , Yasuo Kawamura
发明人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Kanayama , Yasuo Kawamura
IPC分类号： H03F1/14
CPC分类号： H01L21/0276 , G03F7/038 , G03F7/091 , Y10S430/106
摘要： There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.
摘要翻译： 提供了一种用于形成用于抗反射涂层的抗反射涂层的组合物，其在用于制造半导体器件的波长处具有良好的吸收，其对光反射具有高保护效果，其具有高的干蚀刻速率 与光致抗蚀剂层相比。 具体地，用于形成抗反射涂层的组合物含有在氮原子上具有羟烷基结构作为取代基的三嗪三酮化合物，低聚物化合物或高分子化合物。
-
7.发明申请公开(公告)号：US20060216652A1
公开(公告)日：2006-09-28
申请号：US11444392
申请日：2006-06-01
IPC分类号： G03C5/00
CPC分类号： H01L21/0276 , C08G18/791 , C08G73/0655 , C09D179/04 , G03F7/091
摘要： A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): and can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists.
摘要翻译： 一种用于制造半导体器件的光刻工艺中用于形成抗反射涂层的组合物，其包含含有三聚氰酸或其衍生物的树脂或含有衍生自氰尿酸或其衍生物的结构单元的树脂 。 结构单元优选由式（1）表示：并且可以包含在树脂的主链或侧链或主链和侧链中。 由组合物获得的用于光刻的抗反射涂层具有高的反射降低效果，并且不会引起与抗蚀剂层的混合，以产生优异的抗蚀剂图案。 与抗蚀剂相比，它在干蚀刻中具有更高的选择性。
-
公开(公告)号：US06927266B2
公开(公告)日：2005-08-09
申请号：US10078108
申请日：2002-02-20
IPC分类号： G03F7/004 , G03F7/038 , G03F7/09 , C08F122/40
摘要： The present invention relates to a bottom anti-reflective coat forming composition having the resin with the structural unit comprising maleimide or maleimide derivative for the lithography process in the preparation of semiconductor device. The resin comprises maleimide or derivative thereof in the principal chain or the side chain and its weight-average molecular weight is 700-1000000. The invention offers the bottom anti-reflective coating for lithography showing high anti-reflective effect, no intermixing with resist layer, excellent resist pattern, and large dry etching rate in comparison to resist.
摘要翻译： 本发明涉及具有该树脂的底部抗反射涂层形成组合物，该树脂具有包含马来酰亚胺或马来酰亚胺衍生物，用于制备半导体器件的光刻工艺。 该树脂包含主链或侧链中的马来酰亚胺或其衍生物，其重均分子量为700-1000000。 与抗蚀剂相比，本发明提供了用于光刻的底部抗反射涂层，其具有高抗反射效果，不与抗蚀剂层混合，优异的抗蚀剂图案和大的干蚀刻速率。
-
9.发明授权公开(公告)号：US06444320B1
公开(公告)日：2002-09-03
申请号：US09756537
申请日：2001-01-08
申请人： Satoshi Takei , Yasuhisa Sone , Ken-Ichi Mizusawa
发明人： Satoshi Takei , Yasuhisa Sone , Ken-Ichi Mizusawa
IPC分类号： B32B2738
CPC分类号： G03F7/091 , C08G59/1455 , C08G59/1461 , C08L63/10 , C09D163/10 , Y10S430/136 , Y10T428/31511
摘要： New polymers and anti-reflective or fill compositions including those polymers are provided. The polymer comprises recurring monomers according to the formula wherein R comprises a light attenuating compound. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process.
摘要翻译： 提供了包括那些聚合物在内的新型聚合物和抗反射或填充组合物。 该聚合物包含根据式的重复单体，R包含光衰减化合物。 本发明的组合物可用于在双镶嵌工艺中的后续蚀刻期间保护接触或通孔免于降解。
-
公开(公告)号：US07947424B2
公开(公告)日：2011-05-24
申请号：US10520461
申请日：2003-07-11
CPC分类号： G03F7/091 , H01L21/0276 , Y10S430/151
摘要： There is provided a composition for forming anti-reflective coating containing a urea compound substituted by hydroxyalkyl group or alkoxyalkyl group, and preferably a light absorbing compound and/or a light absorbing resin; a method of forming a anti-reflective coating for a semiconductor device by use of the composition; and a process for manufacturing a semiconductor device by use of the composition. The composition according to the present invention exhibits a good light-absorption to a light having a wavelength used for manufacturing a semiconductor device. Therefore, the composition exerts a high protection effect against light reflection, and has a high dry etching rate compared with photoresist layers.
摘要翻译： 提供一种用于形成抗羟基烷基或烷氧基烷基取代的尿素化合物的抗反射涂层的组合物，优选光吸收性化合物和/或光吸收树脂; 通过使用该组合物形成用于半导体器件的抗反射涂层的方法; 以及使用该组合物制造半导体器件的方法。 根据本发明的组合物对具有用于制造半导体器件的波长的光表现出良好的光吸收。 因此，该组合物对光反射具有高保护效果，与光致抗蚀剂层相比具有高的干蚀刻速率。
-
-
-
-
-
-
-
-
-
搜索结果
19 条记录 (耗时 0.018 秒)
