公开(公告)号：US08268726B2

公开(公告)日：2012-09-18

申请号：US12833081

申请日：2010-07-09

申请人： Hae-Jung Lee ,  Kang-Pok Lee ,  Kyeong-Hyo Lee

发明人： Hae-Jung Lee ,  Kang-Pok Lee ,  Kyeong-Hyo Lee

IPC分类号： H01L21/302

CPC分类号： H01L21/76802 ,  H01L21/31116 ,  H01L21/32135

摘要： A method for fabricating a semiconductor device includes forming a plurality of plugs over a die region and an edge bead removal (EBR) region of a wafer, forming metal lines coupled to the plugs, removing the metal lines in the EBR region, forming an inter-layer dielectric layer over the wafer, and forming a plurality of contact holes that expose the metal lines by selectively etching the inter-layer dielectric layer through a dry etch process using a plasma etch device.

摘要翻译： 一种制造半导体器件的方法包括在晶片的芯片区域和边缘珠去除（EBR）区域上形成多个插塞，形成耦合到插塞的金属线，去除EBR区域中的金属线， 并且通过使用等离子体蚀刻装置的干蚀刻工艺选择性地蚀刻层间电介质层而形成多个接触孔，以暴露金属线。

公开(公告)号：US20110159687A1

公开(公告)日：2011-06-30

申请号：US12833081

申请日：2010-07-09

申请人： Hae-Jung Lee ,  Kang-Pok Lee ,  Kyeong-Hyo Lee

发明人： Hae-Jung Lee ,  Kang-Pok Lee ,  Kyeong-Hyo Lee

IPC分类号： H01L21/3213

CPC分类号： H01L21/76802 ,  H01L21/31116 ,  H01L21/32135

摘要： A method for fabricating a semiconductor device includes forming a plurality of plugs over a die region and an edge bead removal (EBR) region of a wafer, forming metal lines coupled to the plugs, removing the metal lines in the EBR region, forming an inter-layer dielectric layer over the wafer, and forming a plurality of contact holes that expose the metal lines by selectively etching the inter-layer dielectric layer through a dry etch process using a plasma etch device.

摘要翻译： 一种制造半导体器件的方法包括在晶片的芯片区域和边缘珠去除（EBR）区域上形成多个插塞，形成耦合到插塞的金属线，去除EBR区域中的金属线， 并且通过使用等离子体蚀刻装置的干蚀刻工艺选择性地蚀刻层间电介质层而形成多个接触孔，以暴露金属线。