摘要:
A method of manufacturing a semiconductor device includes forming a mold structure including alternately stacked mold insulating and sacrificial layers on a substrate, forming a vertical structure through the mold structure, forming side openings by removing the sacrificial, forming a preliminary dielectric layer in the side openings, forming a dielectric layer by heat-treating the preliminary dielectric layer, removing a surface layer of the dielectric layer, forming a first conductive layer covering the dielectric layer in the side openings, and forming a second conductive layer covering the first conductive layer and filling the side openings.
摘要:
A three-dimensional semiconductor device includes a plurality of stack structures extending in one direction on a substrate and spaced apart from each other, a plurality of vertical structures penetrating the stack structures, a common source plug between the stack structures that are adjacent to each other and extending in parallel to the stack structures, and a spacer structure at each side of the common source plug. The stack structure has a sidewall defining recess regions vertically spaced apart from each other. The spacer structure covers sidewalls of the stack structures. The spacer structure includes an insulating spacer and a protection spacer. The insulating spacer fills the recess regions of the stack structure and includes a surface having grooves. The protection spacer fills the grooves of the surface of the insulating spacer and has a substantially flat surface.
摘要:
A semiconductor device is provided. The semiconductor device includes a stack structure comprising insulating patterns and electrode structures alternately stacked on a substrate, and a vertical channel structure vertically penetrating the stack structure. Each of the electrode structures includes a conductive pattern having a first sidewall and a second sidewall opposite to the first sidewall, a first etching prevention pattern on the first sidewall, and a second etching prevention pattern on the second sidewall.
摘要:
The present invention relates to a metering pump for continuously feeding a predetermined amount of a fluid. The present invention uses a used tire as a compression member 200b including a compression chamber 200a for pumping fluid. Fluid may be continuously pumped in a unit of a predetermined amount by check valves v1 and v2 of a fluid introduction pipe 401 and a fluid discharge pipe connected to the compression chamber 200a by a flexible operation of the compression member 200b by performing a reciprocating motion for a shaft 305 connected to a crank 303 cooperating with a plurality of compression members 200b by a drive motor in an axial direction of the compression member.
摘要:
A virtual screen sound source is spatially synchronized with a visual object displayed on a display. A plurality of loudspeaker sets, which each include at least three of a plurality of loudspeakers installed at the periphery of a display, are selected, individual sound sources corresponding to the respective selected loudspeaker sets are generated, and a multi-sound source is generated by overlapping the generated individual sound sources and output through loudspeakers included in the loudspeaker sets.
摘要:
A sound enhancement apparatus and method which produce low IMD over a broadband frequency region and performs BSE to offer a sound which is natural to the human ears, are provided. The sound enhancement apparatus includes a preprocessor, a BSE signal generator, and a gain controller. The preprocessor divides a source signal into a high-frequency signal and a low-frequency signal and analyzes the low-frequency signal to obtain prediction information regarding a degree of distortion that will be generated by the low-frequency signal. The BSE signal generator generates a higher harmonic signal for the low-frequency signal as a BSE signal to be substituted for the low-frequency signal, wherein the order of the higher harmonic signal is adjusted based on the prediction information regarding the degree of distortion. The gain controller adjusts a synthesis ratio of the low-frequency signal and the BSE signal adaptively depending on the prediction information regarding the degree of distortion.
摘要:
A method of processing an ultrasound image includes generating a plurality of two-dimensional (2D) ultrasound images from three-dimensional (3D) ultrasound volume data of an object to be diagnosed, generating a plurality of tissue edge images of an edge of at least one tissue component in the object to be diagnosed based on values of a plurality of pixels forming each of the 2D ultrasound images generated from the 3D ultrasound volume data, and generating a 2D ultrasound image from which a noise component has been removed by discriminating the edge of the at least one tissue component from a position of the noise component based on a difference between a similarity of the edge of the at least one tissue component in the tissue edge images and a similarity of the noise component in the tissue edge images.
摘要:
A system for measuring electrical resistivity survey checks a border of bedrock or a thickness of a sedimentary layer in a riverbed of a river or lake within a short time. A method for analysis of an underground structure of a riverbed using the same is also provided. The system for streamer electric resistivity survey using a survey boat includes a streamer cable connected to the survey boat and having a plurality of electrodes attached thereto, a multi-channel resistivity meter loaded on the survey boat to measure electric resistivity from the plurality of electrodes, a first RTK GPS (Real Time Kinematic Global Positioning System) loaded on the survey boat to measure a position of the survey boat in real time, and a second RTK GPS installed to a tail of the streamer cable to measure a position of the tail in real time.
摘要:
Methods of fabricating a semiconductor device include alternatingly and repeatedly stacking sacrificial layers and first insulating layers on a substrate, forming an opening penetrating the sacrificial layers and the first insulating layers, and forming a spacer on a sidewall of the opening, wherein a bottom surface of the opening is free of the spacer. A semiconductor layer is formed in the opening. Related devices are also disclosed.
摘要:
Methods of forming vertical nonvolatile memory devices may include forming an electrically insulating layer, which includes a composite of a sacrificial layer sandwiched between first and second mold layers. An opening extends through the electrically insulating layer and exposes inner sidewalls of the first and second mold layers and the sacrificial layer. A sidewall of the opening may be lined with an electrically insulating protective layer and a first semiconductor layer may be formed on an inner sidewall of the electrically insulating protective layer within the opening. At least a portion of the sacrificial layer may then be selectively etched from between the first and second mold layers to thereby define a lateral recess therein, which exposes an outer sidewall of the electrically insulating protective layer.