公开(公告)号：US20130265108A1

公开(公告)日：2013-10-10

申请号：US13591061

申请日：2012-08-21

申请人： Joos Dieter ,  Wim Philibert ,  Patrick Reynaert ,  Dixian Zhao

发明人： Joos Dieter ,  Wim Philibert ,  Patrick Reynaert ,  Dixian Zhao

IPC分类号： H03F3/45

CPC分类号： H03F1/0277 ,  H03F3/195 ,  H03F3/211 ,  H03F3/213 ,  H03F3/72 ,  H03F2200/06 ,  H03F2200/09 ,  H03F2200/222 ,  H03F2200/312 ,  H03F2200/396 ,  H03F2200/411 ,  H03F2200/414 ,  H03F2200/417 ,  H03F2200/421 ,  H03F2200/451 ,  H03F2200/534 ,  H03F2200/537 ,  H03F2200/541 ,  H03F2200/72 ,  H03F2200/75 ,  H03F2203/21106 ,  H03F2203/21142 ,  H03F2203/21175 ,  H03F2203/45018 ,  H03F2203/45036 ,  H03F2203/45172 ,  H03F2203/45206 ,  H03F2203/45556 ,  H03F2203/45566 ,  H03F2203/45592 ,  H03F2203/45621 ,  H03F2203/45638 ,  H03F2203/45726 ,  H03F2203/45728 ,  H03F2203/45731 ,  H03F2203/7221 ,  H03F2203/7224 ,  H03H7/48

摘要： An Extremely High Frequency (EHF) dual-mode PA with a power combiner is designed using 40-nm bulk CMOS technology. One of the unit PAs can be switched off for the low power applications. In the design, circuit level optimization and trade-off are performed to ensure the good performance in both modes. The PA achieves a PSAT of 17.4 dBm with 29.3% PAE in high power mode and a PSAT of 12.6 dBm with 19.6% PAE in low power mode. The reliability measurements are also conducted and a lifetime of 80613 hours is estimated based on a commonly used empirical model. The excellent performance (e.g., highest reported PAE) achieved in this design further confirms the scaling of CMOS technology will continue to benefit the mm-wave transceiver design.

摘要翻译： 具有功率组合器的极高频（EHF）双模PA采用40-nm大容量CMOS技术设计。 对于低功率应用，其中一个单元PA可以关闭。 在设计中，执行电路级优化和权衡，以确保两种模式的良好性能。 PA在高功率模式下实现了17.4dBm的PSAT和29.3％的PAE，在低功率模式下，PAAT为12.6dBm，PAE为19.6％。 还进行可靠性测量，并且基于常用的经验模型估计80613小时的寿命。 在该设计中实现的优异性能（例如，报告最高的PAE）进一步证实了CMOS技术的扩展将继续有利于mm波收发器设计。

公开(公告)号：US08823449B2

公开(公告)日：2014-09-02

申请号：US13591061

申请日：2012-08-21

申请人： Joos Dieter ,  Wim Philibert ,  Patrick Reynaert ,  Dixian Zhao

发明人： Joos Dieter ,  Wim Philibert ,  Patrick Reynaert ,  Dixian Zhao

IPC分类号： H03F1/14

CPC分类号： H03F1/0277 ,  H03F3/195 ,  H03F3/211 ,  H03F3/213 ,  H03F3/72 ,  H03F2200/06 ,  H03F2200/09 ,  H03F2200/222 ,  H03F2200/312 ,  H03F2200/396 ,  H03F2200/411 ,  H03F2200/414 ,  H03F2200/417 ,  H03F2200/421 ,  H03F2200/451 ,  H03F2200/534 ,  H03F2200/537 ,  H03F2200/541 ,  H03F2200/72 ,  H03F2200/75 ,  H03F2203/21106 ,  H03F2203/21142 ,  H03F2203/21175 ,  H03F2203/45018 ,  H03F2203/45036 ,  H03F2203/45172 ,  H03F2203/45206 ,  H03F2203/45556 ,  H03F2203/45566 ,  H03F2203/45592 ,  H03F2203/45621 ,  H03F2203/45638 ,  H03F2203/45726 ,  H03F2203/45728 ,  H03F2203/45731 ,  H03F2203/7221 ,  H03F2203/7224 ,  H03H7/48

摘要： An Extremely High Frequency (EHF) dual-mode PA with a power combiner is designed using 40-nm bulk CMOS technology. One of the unit PAs can be switched off for the low power applications. In the design, circuit level optimization and trade-off are performed to ensure the good performance in both modes. The PA achieves a PSAT of 17.4 dBm with 29.3% PAE in high power mode and a PSAT of 12.6 dBm with 19.6% PAE in low power mode. The reliability measurements are also conducted and a lifetime of 80613 hours is estimated based on a commonly used empirical model. The excellent performance (e.g., highest reported PAE) achieved in this design further confirms the scaling of CMOS technology will continue to benefit the mm-wave transceiver design.

摘要翻译： 具有功率组合器的极高频（EHF）双模PA采用40-nm大容量CMOS技术设计。 对于低功率应用，其中一个单元PA可以关闭。 在设计中，执行电路级优化和权衡，以确保两种模式的良好性能。 PA在高功率模式下实现了17.4dBm的PSAT和29.3％的PAE，在低功率模式下，PAAT为12.6dBm，PAE为19.6％。 还进行可靠性测量，并且基于常用的经验模型估计80613小时的寿命。 在该设计中实现的优异性能（例如，报告最高的PAE）进一步证实了CMOS技术的扩展将继续有利于mm波收发器设计。