摘要:
An energy storage device includes a middle section (610) including a plurality of double-sided porous structures (500), each of which contain multiple channels (511) in two opposing surfaces (515, 525) thereof, an upper section (620) comprising a single-sided porous structure (621) containing multiple channels (622) in a surface (625) thereof, and a lower section (630) including a single-sided porous structure (631) containing multiple channels (632) in a surface (635) thereof.
摘要:
A method, device and system for representing numbers in a computer including storing a floating-point number M in a computer memory; representing the floating-point number M as an interval with lower and upper bounds A and B when it is accessed by using at least two floating-point numbers in the memory; and then representing M as an interval with lower and upper bounds A and B when it is used in a calculation by using at least three floating-point numbers in the memory. Calculations are performed using the interval and when the data is written back to the memory it may be stored as an interval if the size of the interval is significant, i.e. larger than a first threshold value. A warning regarding the suspect accuracy of any data stored as an interval may be issued if the interval is too large, i.e. larger than a second threshold value.
摘要:
An energy storage structure includes an energy storage device containing at least one porous structure (110, 120, 510, 1010) that contains multiple channels (111, 121), each one of which has an opening (112, 122) to a surface (115, 116, 515, 516, 1015, 1116) of the porous structure, and further includes a support structure (102, 402, 502, 1002) for the energy storage device. In a particular embodiment, the porous structure and the support structure are both formed from a first material, and the support structure physically contacts a first portion (513, 813, 1213) of the energy storage device and exposes a second portion (514, 814, 1214) of the energy storage device.
摘要:
Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure.
摘要:
In one embodiment a charge storage device includes first (110) and second (120) electrically conductive structures separated from each other by a separator (130). At least one of the first and second electrically conductive structures includes a porous structure containing multiple channels (111, 121). Each one of the channels has an opening (112, 122) to a surface (115, 125) of the porous structure. In another embodiment the charge storage device includes multiple nanostructures (610) and an electrolyte (650) in physical contact with at least some of the nanostructures. A material (615) having a dielectric constant of at least 3.9 may be located between the electrolyte and the nanostructures.
摘要:
Methods of forming microelectronic structures are described. Embodiments of those methods may include forming an electrochemical capacitor device by forming pores in low-purity silicon materials. Various embodiments described herein enable the fabrication of high capacitive devices using low cost techniques.
摘要:
In one embodiment of the invention, a method of forming an energy storage device is described in which a porous structure of an electrically conductive substrate is measured in-situ while being electrochemically etched in an electrochemical etching bath until a predetermined value is obtained, at which point the electrically conductive substrate may be removed from the electrochemical etching bath. In another embodiment, a method of forming an energy storage device is described in which an electrically conductive porous structure is measured to determine the energy storage capacity of the electrically conductive porous structure. The energy storage capacity of the electrically conductive porous structure is then reduced until a predetermined energy storage capacity value is obtained.
摘要:
Methods of forming microelectronic structures are described. Embodiments of those methods may include forming an electrochemical capacitor device by forming pores in low-purity silicon materials. Various embodiments described herein enable the fabrication of high capacitive devices using low cost techniques.
摘要:
An electronic device comprises a processor, a light source, and a controller coupled to the light source. The controller comprises logic to cycle the light source between an active state and an inactivate state at with a pulse duration that measures between 30 milliseconds and 100 milliseconds and jitter a time onset of the active state by a quasi-random time that measures between 0 and 30 milliseconds for one or more cycles. Other embodiments may be described.
摘要:
A method for accuracy-aware analysis of a program involving obtaining source code for the program comprising a floating point variable, instrumenting the source code to associate an accuracy-aware tracking structure with the floating-point variable to obtain instrumented source code, compiling to instrumented source code to obtain instrumented compiled code, and executing the instrumented compiled code, wherein executing the instrumented compiled code comprises using the accuracy-aware tracking structure to track an operation on the floating-point variable.