公开(公告)号：US20090309868A1

公开(公告)日：2009-12-17

申请号：US12453191

申请日：2009-05-01

申请人： Jisim Jung ,  Woochel Lee ,  Hyunsang Park ,  Sangmyeon Han ,  Minkoo Han

发明人： Jisim Jung ,  Woochel Lee ,  Hyunsang Park ,  Sangmyeon Han ,  Minkoo Han

IPC分类号： G09G5/00 ,  G09G3/32

CPC分类号： G09G3/3233 ,  G09G3/2037 ,  G09G3/2081 ,  G09G2300/0842

摘要： An active matrix organic light emitting diode (AMOLED) display including an organic light emitting diode (OLED), a driving transistor switching a supply of current to the OLED according to image signals, and at least one current controller including a plurality of current control transistors controlling the amount of the current supplied to the OLED.

摘要翻译： 一种有源矩阵有机发光二极管（AMOLED）显示器，包括有机发光二极管（OLED），驱动晶体管根据图像信号切换向OLED提供的电流，以及至少一个电流控制器，包括多个电流控制晶体管 控制供应给OLED的电流量。

公开(公告)号：US20100159642A1

公开(公告)日：2010-06-24

申请号：US12659148

申请日：2010-02-26

申请人： Jisim Jung ,  Youngsoo Park ,  Sangyoon Lee ,  Changjung Kim ,  Taesang Kim ,  Jangyeon Kwon ,  Kyungseok Son

发明人： Jisim Jung ,  Youngsoo Park ,  Sangyoon Lee ,  Changjung Kim ,  Taesang Kim ,  Jangyeon Kwon ,  Kyungseok Son

IPC分类号： H01L21/336 ,  H01L21/04

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100° C. or above.

摘要翻译： 提供了使用透明氧化物半导体作为沟道材料的氧化物半导体薄膜晶体管的制造方法。 氧化物半导体薄膜晶体管的制造方法包括在沟道层上形成钝化层，在约100℃以上的温度下进行1小时以上的退火处理。

公开(公告)号：US20090289877A1

公开(公告)日：2009-11-26

申请号：US12314516

申请日：2008-12-11

申请人： Jangyeon Kwon ,  Sangyoon Lee ,  Myungkwan Ryu ,  Taesang Kim ,  Kyungbae Park ,  Byungwook Yoo ,  Kyungseok Son ,  Jisim Jung

发明人： Jangyeon Kwon ,  Sangyoon Lee ,  Myungkwan Ryu ,  Taesang Kim ,  Kyungbae Park ,  Byungwook Yoo ,  Kyungseok Son ,  Jisim Jung

IPC分类号： G09G3/20 ,  G09G3/36 ,  G09G3/32

CPC分类号： G02F1/133305 ,  G09F9/35

摘要： A display apparatus may include: a flexible base having a first surface and a second surface; a hard base including a plurality of base members adhered onto the first surface of the flexible base; and/or an image display structure formed on the second surface of the flexible base. A method of manufacturing a display apparatus may include: preparing a flexible base having a first surface and a second surface; adhering a hard base onto the first surface of the flexible base; forming an image display structure on the second surface of the flexible base; and/or dividing the hard base into a plurality of base members.

摘要翻译： 显示装置可以包括：具有第一表面和第二表面的柔性基座; 包括粘附到柔性基底的第一表面上的多个基底构件的硬质基底; 和/或形成在柔性基座的第二表面上的图像显示结构。 制造显示装置的方法可以包括：制备具有第一表面和第二表面的柔性基底; 将坚硬的基底粘附到柔性基底的第一表面上; 在柔性基底的第二表面上形成图像显示结构; 和/或将硬底座分成多个基座构件。

公开(公告)号：US08610649B2

公开(公告)日：2013-12-17

申请号：US12314516

申请日：2008-12-11

申请人： Jangyeon Kwon ,  Sangyoon Lee ,  Myungkwan Ryu ,  Taesang Kim ,  Kyungbae Park ,  Byungwook Yoo ,  Kyungseok Son ,  Jisim Jung

发明人： Jangyeon Kwon ,  Sangyoon Lee ,  Myungkwan Ryu ,  Taesang Kim ,  Kyungbae Park ,  Byungwook Yoo ,  Kyungseok Son ,  Jisim Jung

IPC分类号： G09G3/32 ,  G09G3/36

CPC分类号： G02F1/133305 ,  G09F9/35

摘要： A display apparatus may include: a flexible base having a first surface and a second surface; a hard base including a plurality of base members adhered onto the first surface of the flexible base; and/or an image display structure formed on the second surface of the flexible base. A method of manufacturing a display apparatus may include: preparing a flexible base having a first surface and a second surface; adhering a hard base onto the first surface of the flexible base; forming an image display structure on the second surface of the flexible base; and/or dividing the hard base into a plurality of base members.

公开(公告)号：US08389344B2

公开(公告)日：2013-03-05

申请号：US12659148

申请日：2010-02-26

申请人： Jisim Jung ,  Youngsoo Park ,  Sangyoon Lee ,  Changjung Kim ,  Taesang Kim ,  Jangyeon Kwon ,  Kyungseok Son

发明人： Jisim Jung ,  Youngsoo Park ,  Sangyoon Lee ,  Changjung Kim ,  Taesang Kim ,  Jangyeon Kwon ,  Kyungseok Son

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100° C. or above.

公开(公告)号：US07799622B2

公开(公告)日：2010-09-21

申请号：US12320627

申请日：2009-01-30

申请人： Jisim Jung ,  Youngsoo Park ,  Sangyoon Lee ,  Changjung Kim ,  Taesang Kim ,  Jangyeon Kwon ,  Kyungseok Son

发明人： Jisim Jung ,  Youngsoo Park ,  Sangyoon Lee ,  Changjung Kim ,  Taesang Kim ,  Jangyeon Kwon ,  Kyungseok Son

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100° C. or above.

公开(公告)号：US20090305468A1

公开(公告)日：2009-12-10

申请号：US12320627

申请日：2009-01-30

申请人： Jisim Jung ,  Youngsoo Park ,  Sangyoon Lee ,  Changjung Kim ,  Taesang Kim ,  Jangyeon Kwon ,  Kyungseok Son

发明人： Jisim Jung ,  Youngsoo Park ,  Sangyoon Lee ,  Changjung Kim ,  Taesang Kim ,  Jangyeon Kwon ,  Kyungseok Son

IPC分类号： H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100° C. or above.

摘要翻译： 提供了使用透明氧化物半导体作为沟道材料的氧化物半导体薄膜晶体管的制造方法。 氧化物半导体薄膜晶体管的制造方法包括在沟道层上形成钝化层，在约100℃以上的温度下进行1小时以上的退火处理。