公开(公告)号：US20080296682A1

公开(公告)日：2008-12-04

申请号：US11755930

申请日：2007-05-31

Applicant: Jianhong ZHU ,  Jinrong ZHOU ,  David WU ,  James F. BULLER

Inventor： Jianhong ZHU ,  Jinrong ZHOU ,  David WU ,  James F. BULLER

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L21/84 ,  H01L21/76895 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823475 ,  H01L27/1203 ,  H01L29/7843

Abstract: MOS structures with remote contacts and methods for fabricating such MOS structures are provided. In one embodiment, a method for fabricating an MOS structure comprises providing a semiconductor layer that is at least partially surrounded by an isolation region and that has an impurity-doped first portion. First and second MOS transistors are formed on and within the first portion. The transistors are substantially parallel and define a space therebetween. An insulating material is deposited overlying the first portion of the semiconductor layer and at least a portion of the isolation region. A contact is formed through the insulating material outside the space such that the contact is in electrical communication with the transistors.

Abstract translation: 提供了具有远程触点的MOS结构和用于制造这种MOS结构的方法。 在一个实施例中，一种用于制造MOS结构的方法包括提供半导体层，该半导体层至少部分地被隔离区包围，并且具有杂质掺杂的第一部分。 第一和第二MOS晶体管形成在第一部分内部和第一部分内。 晶体管基本上平行并且在它们之间限定了一个空间。 沉积覆盖半导体层的第一部分和隔离区域的至少一部分的绝缘材料。 通过空间外部的绝缘材料形成触点，使得触点与晶体管电连通。

公开(公告)号：US10092616B2

公开(公告)日：2018-10-09

申请号：US15381068

申请日：2016-12-15

Applicant: Tianfeng Jiang ,  Zhenghua Jiang ,  Jinrong Zhou

Inventor： Tianfeng Jiang ,  Zhenghua Jiang ,  Jinrong Zhou

IPC: A61K36/00 ,  A61K36/888 ,  A61K36/754 ,  A61K36/236 ,  A61K36/28 ,  A61K36/232 ,  A61K36/536 ,  A61K36/185 ,  A61K36/481 ,  A61K36/74 ,  A61K36/268

Abstract: A composition of Chinese medicines for externally treatment for hypertension includes following herbs: evodia rutaecarpa, chuanxiong, sunflower disc, rhizoma typhonii, angelica, prunella vulgaris, taxillus chinenesis, herba siegesbeckiae, chamomile, astragalus, uncaria rhynchophylla, asarum, and burdock, wherein a weight ratio of the composition is: evodia rutaecarpa 40-50, chuanxiong 30-40, sunflower disc 20-30, rhizoma typhonii 20-25, angelica 20-25, prunella vulgaris 20-30, herba siegesbeckiae 20-30, taxillus chinenesis 20-30, chamomile 20-25, astragalus 20-25, uncaria rhynchophylla 20-30, asarum 20-25, and burdock 20-25.

公开(公告)号：US20170368129A1

公开(公告)日：2017-12-28

申请号：US15381068

申请日：2016-12-15

Applicant: Tianfeng JIANG ,  Zhenghua JIANG ,  Jinrong ZHOU

Inventor： Tianfeng JIANG ,  Zhenghua JIANG ,  Jinrong ZHOU

IPC: A61K36/888 ,  A61K36/74 ,  A61K36/536 ,  A61K36/28 ,  A61K36/185 ,  A61K36/268 ,  A61K36/236 ,  A61K36/232 ,  A61K36/754 ,  A61K36/481

CPC classification number: A61K36/888 ,  A61K36/185 ,  A61K36/232 ,  A61K36/236 ,  A61K36/268 ,  A61K36/28 ,  A61K36/481 ,  A61K36/536 ,  A61K36/74 ,  A61K36/754 ,  A61K2300/00

Abstract: A composition of Chinese medicines for externally treatment for hypertension includes following herbs: evodia rutaecarpa, chuanxiong, sunflower disc, rhizoma typhonii, angelica, prunella vulgaris, taxillus chinenesis, herba siegesbeckiae, chamomile, astragalus, uncaria rhynchophylla, asarum, and burdock, wherein a weight ratio of the composition is: evodia rutaecarpa 40-50, chuanxiong 30-40, sunflower disc 20-30, rhizoma typhonii 20-25, angelica 20-25, prunella vulgaris 20-30, herba siegesbeckiae 20-30, taxillus chinenesis 20-30, chamomile 20-25, astragalus 20-25, uncaria rhynchophylla 20-30, asarum 20-25, and burdock 20-25.

公开(公告)号：US07989891B2

公开(公告)日：2011-08-02

申请号：US11755930

申请日：2007-05-31

Applicant: Jianhong Zhu ,  Jinrong Zhou ,  David Wu ,  James F. Buller

Inventor： Jianhong Zhu ,  Jinrong Zhou ,  David Wu ,  James F. Buller

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L21/84 ,  H01L21/76895 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823475 ,  H01L27/1203 ,  H01L29/7843

Abstract: MOS structures with remote contacts and methods for fabricating such MOS structures are provided. In one embodiment, a method for fabricating an MOS structure comprises providing a semiconductor layer that is at least partially surrounded by an isolation region and that has an impurity-doped first portion. First and second MOS transistors are formed on and within the first portion. The transistors are substantially parallel and define a space therebetween. An insulating material is deposited overlying the first portion of the semiconductor layer and at least a portion of the isolation region. A contact is formed through the insulating material outside the space such that the contact is in electrical communication with the transistors.

Abstract translation: 提供具有远程触点的MOS结构和用于制造这种MOS结构的方法。 在一个实施例中，一种用于制造MOS结构的方法包括提供半导体层，该半导体层至少部分地被隔离区包围，并且具有杂质掺杂的第一部分。 第一和第二MOS晶体管形成在第一部分内部和第一部分内。 晶体管基本上平行并且在它们之间限定了一个空间。 沉积覆盖半导体层的第一部分和隔离区域的至少一部分的绝缘材料。 通过空间外部的绝缘材料形成触点，使得触点与晶体管电连通。