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公开(公告)号:US4774164A
公开(公告)日:1988-09-27
申请号:US34250
申请日:1987-04-06
申请人: Paula E. Peavey , Jerris H. Peavey
发明人: Paula E. Peavey , Jerris H. Peavey
摘要: Patterning a chrome mask with PBS (polybutenesulfone) photoresist is enabled in a plasma reactor by covering the patterned photoresist with a glass layer, planarizing the glass layer, etching the photoresist and then etching the chrome mask. The pattern transferred to the chrome mask is the negative or inverse of the pattern in the photoresist layer.
摘要翻译: 通过用玻璃层覆盖图案化的光致抗蚀剂,平坦化玻璃层,蚀刻光致抗蚀剂,然后蚀刻铬掩模,在等离子体反应器中使用PBS(聚亚丁基砜)光致抗蚀剂图案化。 转移到铬掩模的图案是光致抗蚀剂层中的图案的负或反向。
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公开(公告)号:US4790258A
公开(公告)日:1988-12-13
申请号:US34121
申请日:1987-04-03
IPC分类号: H01L21/687 , B05C13/00
CPC分类号: H01L21/68742 , Y10S414/135
摘要: An improved pin lift mechanism for plasma processing of semiconductor wafers is disclosed in which the pins are each contained in a non-magnetic tube which is sealed to the wafer chuck. A magnetic slug in each tube couples external motion of a magnet to the pin.
摘要翻译: 公开了一种用于半导体晶片等离子体处理的改进的引脚提升机构,其中每个引脚均包含在密封于晶片卡盘的非磁性管中。 每个管中的磁芯将磁体的外部运动耦合到引脚。
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