公开(公告)号：US3632434A

公开(公告)日：1972-01-04

申请号：US3632434D

申请日：1969-01-21

Applicant: JERALD L HUTSON

Inventor： HUTSON JERALD L

IPC: H01L21/316 ,  H01L23/31 ,  B44D1/18 ,  H01L1/10

CPC classification number: H01L21/316 ,  H01L23/3157 ,  H01L2924/0002 ,  Y10S148/118 ,  H01L2924/00

Abstract: A process for glass passivating silicon semiconductor junctions comprises the steps of coating a slice of semiconductor material containing exposed rectifying junctions in a liquid mixture of powdered glass and an organic component, spinning the slice to remove excess mixture, but leave remaining on the slice a thin uniform film of the mixture, heating the slice in an oxygen atmosphere to form a very thin silicon dioxide layer on the surface of the slice while burning off the organic component to leave the glass in a highly compacted, dry powder form tightly adhering to the slice, and again heating the slice in a dry, substantially oxygen-free atmosphere at a temperature sufficient to fuse the glass powder together and to the slice.

Abstract translation: 用于玻璃钝化硅半导体结的方法包括以下步骤：在玻璃粉末和有机组分的液体混合物中涂覆含有暴露的精馏结的半导体材料片，旋转切片以除去过量的混合物，但留在切片上薄 混合物的均匀膜，在氧气气氛中加热切片以在切片的表面上形成非常薄的二氧化硅层，同时燃烧有机组分，使玻璃留下紧密粘附在切片上的高度紧密，干燥的粉末形式 ，并再次在干燥的，基本上无氧的气氛中加热切片，其温度足以将玻璃粉末熔合到切片上。

公开(公告)号：US3996601A

公开(公告)日：1976-12-07

申请号：US568470

申请日：1975-04-16

Applicant: Jerald L. Hutson

Inventor： Jerald L. Hutson

IPC: H01L29/747 ,  H01L29/87

CPC classification number: H01L29/747 ,  H01L29/87

Abstract: The specification discloses a semiconductor switch having a body formed from at least five layers of alternating first and second types of semiconductor material. A pair of regions of the first type of semiconductor material are formed on an outer surface of the body and are spaced apart by a pair of regions of the second type of semiconductor material. Electrodes contact the regions and form a gate and an anode. An electrode contacts the other outer surface of the body to form a second anode. Structure is provided for electrically connecting at least one of the regions with an intermediate layer which is interior within the body and is not immediately adjacent the regions. This shorting structure increases the switching speed of the device and improves the commutating and static dv/dt capabilities of the device.

Abstract translation: 本说明书公开了一种半导体开关，其具有由至少五层交替的第一和第二类型的半导体材料形成的主体。 第一类型的半导体材料的一对区域形成在主体的外表面上并且被第二类型的半导体材料的一对区域隔开。 电极接触区域并形成栅极和阳极。 电极接触主体的另一个外表面以形成第二阳极。 提供了用于将至少一个区域与内部在内部并且不紧邻区域的中间层电连接的结构。 这种短路结构提高了器件的开关速度，并提高了器件的整流和静态dv / dt功能。