Light emitting diode package and fabrication method thereof
    1.
    发明授权
    Light emitting diode package and fabrication method thereof 有权
    发光二极管封装及其制造方法

    公开(公告)号:US08168453B2

    公开(公告)日:2012-05-01

    申请号:US12370802

    申请日:2009-02-13

    IPC分类号: H01L21/56

    摘要: An LED package and a fabrication method therefor. The LED package includes first and second lead frames made of heat and electric conductors, each of the lead frames comprising a planar base and extensions extending in opposed directions and upward directions from the base. The package also includes a package body made of a resin and configured to surround the extensions of the first and second lead frames to fix the first and second lead frames while exposing underside surfaces of the first and second lead frames. The LED package further includes a light emitting diode chip disposed on an upper surface of the base of the first lead frame and electrically connected to the bases of the first and second lead frames, and a transparent encapsulant for encapsulating the light emitting diode chip.

    摘要翻译: 一种LED封装及其制造方法。 LED封装包括由热和电导体制成的第一引线框架和第二引线框架,每个引线框架包括平面基座和从基座向相反方向和向上方向延伸的延伸部分。 封装还包括由树脂制成的封装主体,并且被配置为围绕第一引线框架和第二引线框架的延伸部分以固定第一和第二引线框架同时暴露第一引线框架和第二引线框架的下侧表面。 LED封装还包括设置在第一引线框架的基座的上表面上并电连接到第一引线框架和第二引线框架的基座的发光二极管芯片,以及用于封装发光二极管芯片的透明密封剂。

    Vertical gallium nitride-based light emitting diode and method of manufacturing the same
    2.
    发明授权
    Vertical gallium nitride-based light emitting diode and method of manufacturing the same 有权
    立式氮化镓系发光二极管及其制造方法

    公开(公告)号:US07872276B2

    公开(公告)日:2011-01-18

    申请号:US11742818

    申请日:2007-05-01

    IPC分类号: H01L33/00

    摘要: A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.

    摘要翻译: 制造垂直GaN基LED的方法包括:形成其中n型GaN基半导体层,有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构,使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

    LIGHT EMITTING DIODE PACKAGE AND FABRICATION METHOD THEREOF
    3.
    发明申请
    LIGHT EMITTING DIODE PACKAGE AND FABRICATION METHOD THEREOF 有权
    发光二极管封装及其制造方法

    公开(公告)号:US20090197360A1

    公开(公告)日:2009-08-06

    申请号:US12370802

    申请日:2009-02-13

    IPC分类号: H01L21/56

    摘要: An LED package and a fabrication method therefor. The LED package includes first and second lead frames made of heat and electric conductors, each of the lead frames comprising a planar base and extensions extending in opposed directions and upward directions from the base. The package also includes a package body made of a resin and configured to surround the extensions of the first and second lead frames to fix the first and second lead frames while exposing underside surfaces of the first and second lead frames. The LED package further includes a light emitting diode chip disposed on an upper surface of the base of the first lead frame and electrically connected to the bases of the first and second lead frames, and a transparent encapsulant for encapsulating the light emitting diode chip.

    摘要翻译: 一种LED封装及其制造方法。 LED封装包括由热和电导体制成的第一引线框架和第二引线框架,每个引线框架包括平面基座和从基座向相反方向和向上方向延伸的延伸部分。 封装还包括由树脂制成的封装主体,并且被配置为围绕第一引线框架和第二引线框架的延伸部分以固定第一和第二引线框架同时暴露第一引线框架和第二引线框架的下侧表面。 LED封装还包括设置在第一引线框架的基座的上表面上并电连接到第一引线框架和第二引线框架的基座的发光二极管芯片,以及用于封装发光二极管芯片的透明密封剂。

    VERTICAL GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    VERTICAL GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
    立式氮化镓系发光二极管及其制造方法

    公开(公告)号:US20080048206A1

    公开(公告)日:2008-02-28

    申请号:US11742818

    申请日:2007-05-01

    IPC分类号: H01L33/00 H01L21/20

    摘要: A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.

    摘要翻译: 制造垂直GaN基LED的方法包括:形成其中n型GaN基半导体层,有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构,使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

    Direct-type backlight unit having surface light source
    5.
    发明申请
    Direct-type backlight unit having surface light source 失效
    具有表面光源的直接型背光单元

    公开(公告)号:US20080007939A1

    公开(公告)日:2008-01-10

    申请号:US11822331

    申请日:2007-07-05

    IPC分类号: G09F13/04

    摘要: In a direct-type backlight unit, a board has upper and lower surfaces defining a thickness therebetween. A plurality of unit light sources are disposed on the board. Here, in each of the unit light sources, a wiring pattern is formed on the board. A light emitting device is disposed on the wiring pattern to electrically connect thereto. A non-conductive side wall surrounds, without interruption, the light emitting device at a predetermined interval therefrom, the non-conductive side wall having a height lower than that of the light emitting device. Also, an encapsulant is formed in a dome shape inside the side wall. In this fashion, the light emitting devices are mounted on the board by a chip-on-board technique.

    摘要翻译: 在直接型背光单元中,板具有限定其间厚度的上表面和下表面。 多个单元光源设置在板上。 这里,在各单位光源中,在基板上形成配线图案。 发光器件设置在布线图案上以与其电连接。 非导电侧壁以不间断的方式围绕发光器件以预定的间隔包围,非导电侧壁的高度低于发光器件的高度。 此外,密封剂在侧壁内形成为圆顶形状。 以这种方式,发光器件通过板上芯片技术安装在板上。

    Light emitting diode package and fabrication method thereof
    6.
    发明授权
    Light emitting diode package and fabrication method thereof 有权
    发光二极管封装及其制造方法

    公开(公告)号:US08735931B2

    公开(公告)日:2014-05-27

    申请号:US12907348

    申请日:2010-10-19

    IPC分类号: H01L33/62

    摘要: An LED package and a fabrication method therefor. The LED package includes first and second lead frames made of heat and electric conductors, each of the lead frames comprising a planar base and extensions extending in opposed directions and upward directions from the base. The package also includes a package body made of a resin and configured to surround the extensions of the first and second lead frames to fix the first and second lead frames while exposing underside surfaces of the first and second lead frames. The LED package further includes a light emitting diode chip disposed on an upper surface of the base of the first lead frame and electrically connected to the bases of the first and second lead frames, and a transparent encapsulant for encapsulating the light emitting diode chip.

    摘要翻译: 一种LED封装及其制造方法。 LED封装包括由热和电导体制成的第一引线框架和第二引线框架,每个引线框架包括平面基座和从基座向相反方向和向上方向延伸的延伸部分。 封装还包括由树脂制成的封装主体,并且被配置为围绕第一引线框架和第二引线框架的延伸部分以固定第一和第二引线框架同时暴露第一引线框架和第二引线框架的下侧表面。 LED封装还包括设置在第一引线框架的基座的上表面上并电连接到第一引线框架和第二引线框架的基座的发光二极管芯片,以及用于封装发光二极管芯片的透明密封剂。

    Direct-type backlight unit having surface light source
    7.
    发明授权
    Direct-type backlight unit having surface light source 失效
    具有表面光源的直接型背光单元

    公开(公告)号:US07887225B2

    公开(公告)日:2011-02-15

    申请号:US11822331

    申请日:2007-07-05

    IPC分类号: F21V8/00

    摘要: In a direct-type backlight unit, a board has upper and lower surfaces defining a thickness therebetween. A plurality of unit light sources are disposed on the board. Here, in each of the unit light sources, a wiring pattern is formed on the board. A light emitting device is disposed on the wiring pattern to electrically connect thereto. A non-conductive side wall surrounds, without interruption, the light emitting device at a predetermined interval therefrom, the non-conductive side wall having a height lower than that of the light emitting device. Also, an encapsulant is formed in a dome shape inside the side wall. In this fashion, the light emitting devices are mounted on the board by a chip-on-board technique.

    摘要翻译: 在直接型背光单元中,板具有限定其间厚度的上表面和下表面。 多个单元光源设置在板上。 这里,在各单位光源中,在基板上形成配线图案。 发光器件设置在布线图案上以与其电连接。 非导电侧壁以不间断的方式围绕发光器件以预定的间隔包围,非导电侧壁的高度低于发光器件的高度。 此外,密封剂在侧壁内形成为圆顶形状。 以这种方式,发光器件通过板上芯片技术安装在板上。

    LIGHT EMITTING DIODE PACKAGE AND FABRICATION METHOD THEREOF
    8.
    发明申请
    LIGHT EMITTING DIODE PACKAGE AND FABRICATION METHOD THEREOF 有权
    发光二极管封装及其制造方法

    公开(公告)号:US20110031526A1

    公开(公告)日:2011-02-10

    申请号:US12907348

    申请日:2010-10-19

    IPC分类号: H01L33/62

    摘要: An LED package and a fabrication method therefor. The LED package includes first and second lead frames made of heat and electric conductors, each of the lead frames comprising a planar base and extensions extending in opposed directions and upward directions from the base. The package also includes a package body made of a resin and configured to surround the extensions of the first and second lead frames to fix the first and second lead frames while exposing underside surfaces of the first and second lead frames. The LED package further includes a light emitting diode chip disposed on an upper surface of the base of the first lead frame and electrically connected to the bases of the first and second lead frames, and a transparent encapsulant for encapsulating the light emitting diode chip.

    摘要翻译: 一种LED封装及其制造方法。 LED封装包括由热和电导体制成的第一引线框架和第二引线框架,每个引线框架包括平面基座和从基座向相反方向和向上方向延伸的延伸部分。 封装还包括由树脂制成的封装主体,并且被配置为围绕第一引线框架和第二引线框架的延伸部分以固定第一和第二引线框架同时暴露第一引线框架和第二引线框架的下侧表面。 LED封装还包括设置在第一引线框架的基座的上表面上并电连接到第一引线框架和第二引线框架的基座的发光二极管芯片,以及用于封装发光二极管芯片的透明密封剂。

    Light emitting diode package and fabrication method thereof
    9.
    发明申请
    Light emitting diode package and fabrication method thereof 审中-公开
    发光二极管封装及其制造方法

    公开(公告)号:US20070241362A1

    公开(公告)日:2007-10-18

    申请号:US11730965

    申请日:2007-04-05

    IPC分类号: H01L33/00

    摘要: An LED package and a fabrication method therefor. The LED package includes first and second lead frames made of heat and electric conductors, each of the lead frames comprising a planar base and extensions extending in opposed directions and upward directions from the base. The package also includes a package body made of a resin and configured to surround the extensions of the first and second lead frames to fix the first and second lead frames while exposing underside surfaces of the first and second lead frames. The LED package further includes a light emitting diode chip disposed on an upper surface of the base of the first lead frame and electrically connected to the bases of the first and second lead frames, and a transparent encapsulant for encapsulating the light emitting diode chip.

    摘要翻译: 一种LED封装及其制造方法。 LED封装包括由热和电导体制成的第一引线框架和第二引线框架,每个引线框架包括平面基座和从基座向相反方向和向上方向延伸的延伸部分。 封装还包括由树脂制成的封装主体,并且被配置为围绕第一引线框架和第二引线框架的延伸部分以固定第一和第二引线框架同时暴露第一引线框架和第二引线框架的下侧表面。 LED封装还包括设置在第一引线框架的基座的上表面上并电连接到第一引线框架和第二引线框架的基座的发光二极管芯片,以及用于封装发光二极管芯片的透明密封剂。