公开(公告)号：US20080105889A1

公开(公告)日：2008-05-08

申请号：US11976791

申请日：2007-10-29

Applicant: Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

Inventor： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/22 ,  H01L33/32

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract translation: 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US20100193823A1

公开(公告)日：2010-08-05

申请号：US12756528

申请日：2010-04-08

Applicant: Tae Jun KIM ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

Inventor： Tae Jun KIM ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC: H01L33/44

CPC classification number: H01L33/0079 ,  H01L33/22 ,  H01L33/32

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract translation: 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US20120241804A1

公开(公告)日：2012-09-27

申请号：US13421337

申请日：2012-03-15

Applicant: In-joon PYEON

Inventor： In-joon PYEON

IPC: H01L33/38 ,  H01L33/52

CPC classification number: H01L33/52 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2933/005 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device package and method of manufacturing the same. The method includes: preparing a package main body comprising a plurality of cavities, wherein a light-emitting device chip is mounted in each of the cavities and a through hole is formed in a bottom of each of the cavities; preparing a fixed mold providing a first surface that blocks the cavity; coupling the package main body to the fixed mold such that an end portion of the cavity contacts the first surface; supplying an encapsulation material into the cavity through the through hole; hardening the encapsulation material; and separating the package main body from the fixed mold, and dicing the package main body into a plurality of light-emitting device packages using a singulation operation. The encapsulation material is supplied while disposing the package main body on the fixed mold so that the encapsulation material is supplied in a gravitational direction.

Abstract translation: 发光器件封装及其制造方法。 该方法包括：制备包括多个空腔的封装主体，其中在每个空腔中安装发光器件芯片，并且在每个空腔的底部形成通孔; 制备固定模具，提供阻挡空腔的第一表面; 将包装主体联接到固定模具，使得空腔的端部接触第一表面; 通过所述通孔将封装材料供应到所述空腔中; 硬化封装材料; 以及将所述包装主体与所述固定模具分离，并且使用单独操作将所述包装主体切割成多个发光装置包装。 在将包装主体设置在固定模具上的同时供给封装材料，使得封装材料在重力方向上被供应。

公开(公告)号：US07727787B2

公开(公告)日：2010-06-01

申请号：US11976791

申请日：2007-10-29

Applicant: Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

Inventor： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC: H01L21/304

CPC classification number: H01L33/0079 ,  H01L33/22 ,  H01L33/32

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract translation: 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US09130133B2

公开(公告)日：2015-09-08

申请号：US13421337

申请日：2012-03-15

Applicant: In-joon Pyeon

Inventor： In-joon Pyeon

IPC: H01L33/00 ,  H01L33/52 ,  H01L23/00

CPC classification number: H01L33/52 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2933/005 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device package and method of manufacturing the same. The method includes: preparing a package main body comprising a plurality of cavities, wherein a light-emitting device chip is mounted in each of the cavities and a through hole is formed in a bottom of each of the cavities; preparing a fixed mold providing a first surface that blocks the cavity; coupling the package main body to the fixed mold such that an end portion of the cavity contacts the first surface; supplying an encapsulation material into the cavity through the through hole; hardening the encapsulation material; and separating the package main body from the fixed mold, and dicing the package main body into a plurality of light-emitting device packages using a singulation operation. The encapsulation material is supplied while disposing the package main body on the fixed mold so that the encapsulation material is supplied in a gravitational direction.

Abstract translation: 发光器件封装及其制造方法。 该方法包括：制备包括多个空腔的封装主体，其中在每个空腔中安装发光器件芯片，并且在每个空腔的底部形成通孔; 制备固定模具，提供阻挡空腔的第一表面; 将包装主体联接到固定模具，使得空腔的端部接触第一表面; 通过所述通孔将封装材料供应到所述空腔中; 硬化封装材料; 以及将所述包装主体与所述固定模具分离，并且使用单独操作将所述包装主体切割成多个发光装置包装。 在将包装主体设置在固定模具上的同时供给封装材料，使得封装材料在重力方向上被供应。

公开(公告)号：US08124997B2

公开(公告)日：2012-02-28

申请号：US12756528

申请日：2010-04-08

Applicant: Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

Inventor： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC: H01L31/0232

CPC classification number: H01L33/0079 ,  H01L33/22 ,  H01L33/32

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract translation: 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US20110049552A1

公开(公告)日：2011-03-03

申请号：US12810097

申请日：2008-12-24

Applicant: In Joon Pyeon ,  Hong Min Kim

Inventor： In Joon Pyeon ,  Hong Min Kim

IPC: H01L23/28 ,  H01L33/00

CPC classification number: H01L33/62 ,  H01L33/486 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/01021 ,  H01L2924/01068 ,  H01L2924/00014

Abstract: There is provided a light emitting diode (LED) package. The LED package includes A light emitting diode (LED) package includes a pair of lead frames connected with at least one LED chip through a metal wire, a package body integrally fixed with the lead frames and having a cavity having an open top, a lead frame bent downwardly to a lower part of an external mounting surface of the package body, a light-transmissive, transparent resin covering the LED chip and filling the cavity, a recess formed in a bottom surface of the cavity, in which the LED chip is mounted, and a transparent resin including a fluorescent material formed in the recess and the cavity. Accordingly, the amount of light-transmissive, transparent resin filling the cavity is reduced to save on manufacturing costs, and the height of the resin is lowered to improve the luminance of light. Also, the height of the package body is lowered, contributing to manufacturing a small product.

Abstract translation: 提供了一种发光二极管（LED）封装。 LED封装包括：发光二极管（LED）封装，包括通过金属线与至少一个LED芯片连接的一对引线框架，与引线框架整体固定并具有开口顶部的空腔的封装体，引线 框架向下弯曲到封装体的外部安装表面的下部，覆盖LED芯片并填充空腔的透光的透明树脂，形成在腔的底表面中的凹部，其中LED芯片是 以及包含形成在凹部和空腔中的荧光材料的透明树脂。 因此，减少填充空腔的透光性透明树脂的量，以节省制造成本，并且降低树脂的高度以提高光的亮度。 此外，包装体的高度降低，有助于制造小产品。

公开(公告)号：USD597501S1

公开(公告)日：2009-08-04

申请号：US29325548

申请日：2008-10-02

Applicant: Jae Joon Yoon ,  Sung Soo Park ,  In Joon Pyeon

Designer： Jae Joon Yoon ,  Sung Soo Park ,  In Joon Pyeon