知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

215 条记录 (耗时 0.03 秒)

    Semiconductor light emitting device
    1.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US09412908B2

    公开(公告)日：2016-08-09

    申请号：US13548822

    申请日：2012-07-13

    申请人： Hwan Hee Jeong

    发明人： Hwan Hee Jeong

    IPC分类号： H01L33/00 ,  H01L33/40 ,  H01L33/62 ,  H01L33/38

    CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed are a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad on the plurality of compound semiconductor layers; an electrode layer under the plurality of compound semiconductor layers; and a supporting member disposed under the plurality of compound semiconductor layers and corresponding to the pad.

    摘要翻译： 公开了一种半导体发光器件。 半导体发光器件包括多个化合物半导体层，包括第一导电半导体层，有源层和第二导电半导体层; 多个化合物半导体层上的焊盘; 多个化合物半导体层下方的电极层; 以及配置在所述多个化合物半导体层下方并对应于所述垫的支撑构件。

    Light emitting device and fabricating method thereof
    2.
    发明授权
    Light emitting device and fabricating method thereof 有权
    发光元件及其制造方法

    公开(公告)号：US09281341B2

    公开(公告)日：2016-03-08

    申请号：US13358266

    申请日：2012-01-25

    申请人： Hwan Hee Jeong

    发明人： Hwan Hee Jeong

    IPC分类号： H01L33/02 ,  H01L27/15 ,  H01L27/12

    CPC分类号： H01L27/15 ,  H01L27/1266 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： Disclosed is a light emitting device including a support substrate, a transistor unit disposed at one side of the upper surface of the support substrate, a light emitting device unit disposed at the other side of the upper surface of the support substrate, and an insulating layer disposed between the transistor unit and the light emitting device unit and between the support substrate and the transistor unit and isolating the transistor unit from the light emitting device unit.

    摘要翻译： 公开了一种发光器件，包括支撑衬底，设置在支撑衬底的上表面的一侧的晶体管单元，设置在支撑衬底的上表面另一侧的发光器件单元，以及绝缘层 设置在晶体管单元和发光器件单元之间以及支撑衬底和晶体管单元之间，并将晶体管单元与发光器件单元隔离。

    Light emitting device and light emitting device package having the same
    4.
    发明授权
    Light emitting device and light emitting device package having the same 有权
    发光器件和具有该发光器件的发光器件封装

    公开(公告)号：US08901597B2

    公开(公告)日：2014-12-02

    申请号：US13567446

    申请日：2012-08-06

    申请人： Hwan Hee Jeong

    发明人： Hwan Hee Jeong

    IPC分类号： H01L33/00 ,  H01L33/44 ,  H01L33/46 ,  H01L33/40

    CPC分类号： H01L33/54 ,  F21K9/23 ,  F21Y2105/10 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L33/12 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

    摘要： Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer, an electrode electrically connected to the first conductive semiconductor layer, a reflective layer under the second conductive semiconductor layer, a protective layer disposed around a lower surface of the second conductive semiconductor layer, and a buffer layer disposed on at least one of top and lower surfaces of the protective layer.

    摘要翻译： 公开了一种发光器件和具有该发光器件的发光器件封装。 发光器件包括发光结构，其包括第一导电半导体层，第二导电半导体层和介于第一导电半导体层和第二导电半导体层之间的有源层，电连接到第一导电半导体层 ，在第二导电半导体层下面的反射层，设置在第二导电半导体层的下表面周围的保护层和设置在保护层的顶表面和下表面中的至少一个上的缓冲层。

    Light emitting device capable of preventing breakage during high drive voltage and light emitting device package including the same
    5.
    发明授权
    Light emitting device capable of preventing breakage during high drive voltage and light emitting device package including the same 有权
    能够防止高驱动电压下的断线的发光装置和包含该发光装置的发光装置封装

    公开(公告)号：US08884506B2

    公开(公告)日：2014-11-11

    申请号：US13402619

    申请日：2012-02-22

    申请人： Hwan Hee Jeong

    发明人： Hwan Hee Jeong

    IPC分类号： F21V21/00 ,  H01L33/60 ,  H01L27/15 ,  H01L33/62

    CPC分类号： H01L27/156 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

    摘要： A light emitting device includes a light emitting structure divided into a plurality of light emitting cells and a boundary region, the light emitting cells including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, respectively; a first electrode disposed on each of the light emitting cells; first conductive layers disposed under the light emitting cells; at least one second conductive layer disposed under the first conductive layers; a first insulation layer disposed between each of the first conductive layers, and between the first conductive layers and the at least one second conductive layer; and a connecting electrode connecting the first electrode on one light emitting cell with the at least one second conductive layer under another light emitting cell. The at least one second conductive layer is connected with one of the first conductive layers through the first insulation layer.

    摘要翻译： 发光器件包括分为多个发光单元和边界区域的发光结构，所述发光单元分别包括第一导电型半导体层，有源层和第二导电型半导体层; 设置在每个所述发光单元上的第一电极; 设置在发光单元下方的第一导电层; 设置在所述第一导电层下方的至少一个第二导电层; 设置在每个第一导电层之间以及在第一导电层和至少一个第二导电层之间的第一绝缘层; 以及将一个发光单元上的第一电极与另一个发光单元下的至少一个第二导电层连接的连接电极。 所述至少一个第二导电层通过所述第一绝缘层与所述第一导电层之一连接。

    Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system
    7.
    发明授权
    Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system 有权
    发光器件，制造发光器件的方法，发光器件封装和照明系统

    公开(公告)号：US08835972B2

    公开(公告)日：2014-09-16

    申请号：US14070740

    申请日：2013-11-04

    申请人： Hwan Hee Jeong

    发明人： Hwan Hee Jeong

    IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/22

    CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12032 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00

    摘要： Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode electrically connected to the first conductive type semiconductor layer, an insulating support member under the light emitting structure layer, and a plurality of conductive layers between the light emitting structure layer and the insulating support member. At least one of the plurality of conductive layers has a width greater than that of the light emitting structure layer and includes a contact part disposed further outward from a sidewall of the light emitting structure layer.

    摘要翻译： 提供了一种发光装置。 发光器件包括在第一导电类型半导体层和第二导电类型半导体层之间包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光结构层，第一电极电连接到 第一导电类型半导体层，发光结构层下面的绝缘支撑构件，以及在发光结构层和绝缘支撑构件之间的多个导电层。 多个导电层中的至少一个具有比发光结构层的宽度大的宽度，并且包括从发光结构层的侧壁进一步向外设置的接触部。

    LIGHT EMITTING DEVICE
    8.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20140231833A1

    公开(公告)日：2014-08-21

    申请号：US14171191

    申请日：2014-02-03

    申请人： Hwan Hee JEONG

    发明人： Hwan Hee JEONG

    IPC分类号： H01L33/36 ,  H01L33/08

    CPC分类号： H01L33/36 ,  H01L27/156 ,  H01L33/08 ,  H01L33/382 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： A first light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. A second light emitting structure includes a third semiconductor layer, an active layer, and a fourth semiconductor layer. A first electrode and a second electrode connect to the first semiconductor layer, and the second semiconductor layer, respectively. A third electrode and a fourth electrode connect to the third semiconductor layer, and the fourth semiconductor layer, respectively. A first contact portion includes a first region connected to the first electrode and a second region making contact with a top surface of the first semiconductor layer, and a second contact portion connects to the second and third electrodes. A third contact portion includes a first region connected to the third electrode and a second region making contact with a top surface of the third semiconductor layer.

    摘要翻译： 第一发光结构包括第一半导体层，有源层和第二半导体层。 第二发光结构包括第三半导体层，有源层和第四半导体层。 第一电极和第二电极分别连接到第一半导体层和第二半导体层。 第三电极和第四电极分别连接到第三半导体层和第四半导体层。 第一接触部分包括连接到第一电极的第一区域和与第一半导体层的顶表面接触的第二区域，以及连接到第二和第三电极的第二接触部分。 第三接触部分包括连接到第三电极的第一区域和与第三半导体层的顶表面接触的第二区域。