公开(公告)号：US20150014735A1

公开(公告)日：2015-01-15

申请号：US14329362

申请日：2014-07-11

申请人： Ji Hyung MOON

发明人： Ji Hyung MOON

IPC分类号： H01L33/36 ,  H01L33/22

CPC分类号： H01L33/387 ,  H01L33/0012 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

摘要： The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a plurality of first electrodes disposed under the light emitting structure and electrically connected to the first conductive semiconductor layer by passing through the second conductive semiconductor layer, the active layer and a portion of the first conductive semiconductor layer; a second electrode disposed under the light emitting structure to be electrically connected to the second conductive semiconductor layer; a first insulating layer disposed around the first electrode to insulate the first electrode from the second electrode; a bonding layer electrically connected to the second electrode by passing through the first electrode and the first insulating layer; and a second insulating layer around the bonding layer.

摘要翻译： 发光器件包括发光结构，其包括第一导电半导体层，第一导电半导体层下方的有源层和有源层下的第二导电半导体层; 多个第一电极，设置在所述发光结构的下面，并通过所述第二导电半导体层，所述有源层和所述第一导电半导体层的一部分电连接到所述第一导电半导体层; 设置在所述发光结构下面以与所述第二导电半导体层电连接的第二电极; 设置在所述第一电极周围以使所述第一电极与所述第二电极绝缘的第一绝缘层; 通过穿过所述第一电极和所述第一绝缘层与所述第二电极电连接的接合层; 以及在所述接合层周围的第二绝缘层。

公开(公告)号：US08884312B2

公开(公告)日：2014-11-11

申请号：US13370601

申请日：2012-02-10

申请人： Ji Hyung Moon ,  Sang Youl Lee ,  Young kyu Jeong

发明人： Ji Hyung Moon ,  Sang Youl Lee ,  Young kyu Jeong

IPC分类号： H01L29/18 ,  H01L21/00 ,  H01L33/38 ,  H01L33/20 ,  F21Y101/02 ,  F21K99/00 ,  H01L33/48 ,  H01L33/00 ,  H01L33/22 ,  F21V29/00 ,  H01L33/40 ,  H01L33/44

CPC分类号： H01L25/13 ,  F21K9/23 ,  F21V29/83 ,  F21Y2115/10 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62 ,  H01L33/64 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting device is disclosed. The disclosed light emitting device includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, a second electrode layer disposed beneath the light emitting structure and electrically connected to the second-conductivity-type semiconductor layer, a first electrode layer including a main electrode disposed beneath the second electrode layer, and at least one contact electrode branching from the main electrode and extending through the second electrode layer, the second-conductivity-type semiconductor layer and the active layer, to contact the first-conductivity-type semiconductor layer, and an insulating layer interposed between the first electrode layer and the second electrode layer and between the first electrode layer and the light emitting structure. The first-conductivity-type semiconductor layer includes a first region and a second region having a smaller height than the first region, and the first region overlaps with the contact electrode.

摘要翻译： 公开了一种发光器件。 所公开的发光器件包括：发光结构，包括第一导电型半导体层，有源层和第二导电类型半导体层;第二电极层，设置在发光结构的下面，并电连接到第二导电型半导体层 导电型半导体层，包括设置在第二电极层下方的主电极的第一电极层和从主电极分支并延伸穿过第二电极层的至少一个接触电极，第二导电型半导体层和 与第一导电型半导体层接触的有源层和介于第一电极层和第二电极层之间以及第一电极层和发光结构之间的绝缘层。 第一导电型半导体层包括第一区域和具有比第一区域更小的高度的第二区域，并且第一区域与接触电极重叠。

公开(公告)号：US08847268B2

公开(公告)日：2014-09-30

申请号：US13014390

申请日：2011-01-26

申请人： Kwang Ki Choi ,  Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Ji Hyung Moon

发明人： Kwang Ki Choi ,  Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Ji Hyung Moon

IPC分类号： H01L33/00 ,  H01L33/36 ,  H01L33/40 ,  H01L33/44 ,  H01L33/42 ,  H01L33/22 ,  H01L33/10

CPC分类号： H01L33/44 ,  F21K9/23 ,  F21Y2105/10 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/387 ,  H01L33/40 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/0002 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

摘要翻译： 公开了一种发光器件和发光器件封装。 发光器件包括发光结构，其包括第一导电半导体层，第一导电半导体层上的有源层和有源层上的第二导电半导体层，与第一导电半导体层的顶表面接触的粘合层 与第一导电半导体的顶表面和粘合剂层的顶表面接触的第一电极和与第二导电半导体层接触的第二电极，其中与第一电极接触的粘合剂层与第二电极间隔开。

公开(公告)号：US08809895B2

公开(公告)日：2014-08-19

申请号：US13175549

申请日：2011-07-01

申请人： Kwang Ki Choi ,  Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Ji hyung Moon ,  Se Yeon Jung ,  Tae-Yeon Seong

发明人： Kwang Ki Choi ,  Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Ji hyung Moon ,  Se Yeon Jung ,  Tae-Yeon Seong

IPC分类号： H01L33/14 ,  H01L33/46 ,  H01L33/64

CPC分类号： H01L33/14 ,  H01L33/16 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： Provided are a light emitting device and a method of fabricating the same. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer being formed of a semiconductor material. Also, the light emitting device further includes a current spreading layer comprising a plurality of carbon nanotube bundles physically connected to each other on one of the first and second conductive type semiconductor layers.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括第一导电类型半导体层，第二导电类型半导体层和在第一导电类型半导体层和第二导电类型半导体层之间的有源层，有源层由半导体材料形成。 此外，发光器件还包括电流扩展层，其包括在第一和第二导电类型半导体层中的一个上彼此物理连接的多个碳纳米管束。

公开(公告)号：US08643040B2

公开(公告)日：2014-02-04

申请号：US13102478

申请日：2011-05-06

申请人： Sang Youl Lee ,  Ji Hyung Moon ,  June O Song ,  Kwang Ki Choi ,  Chung Song Kim ,  Hwan Hee Jeong

发明人： Sang Youl Lee ,  Ji Hyung Moon ,  June O Song ,  Kwang Ki Choi ,  Chung Song Kim ,  Hwan Hee Jeong

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： A light emitting device includes a light emitting structure including a second conduction type semiconductor layer, an active layer, and a first conduction type semiconductor layer, a second electrode layer arranged under the light emitting structure, a first electrode layer having at least portion extending to contact the first conduction type semiconductor layer passing the second conduction type semiconductor layer and the active layer, and an insulating layer arranged between the second electrode layer and the first electrode layer, between the second conduction type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein said at least one portion of the first electrode layer contacting the first conduction type semiconductor layer has a roughness.

摘要翻译： 发光器件包括：发光结构，包括第二导电类型半导体层，有源层和第一导电类型半导体层;布置在发光结构下方的第二电极层;第一电极层，至少部分延伸到 接触通过第二导电类型半导体层和有源层的第一导电类型半导体层，以及布置在第二电极层和第一电极层之间，在第二导电类型半导体层和第一电极层之间以及介于 所述有源层和所述第一电极层，其中所述与所述第一导电型半导体层接触的所述第一电极层的所述至少一部分具有粗糙度。

公开(公告)号：US08513679B2

公开(公告)日：2013-08-20

申请号：US12797927

申请日：2010-06-10

申请人： Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Ji Hyung Moon ,  Kwang Ki Choi

发明人： Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Ji Hyung Moon ,  Kwang Ki Choi

IPC分类号： H01L27/15

CPC分类号： H01L33/44 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2933/0091 ,  H01L2924/00014

摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, a reflective layer, a conductive support member, and a channel layer. The light-emitting structure may include a plurality of compound semiconductor layers. The electrode may be disposed on the compound semiconductor layer. The reflective layer may be disposed under the compound semiconductor layer. The conductive support member may be disposed under the reflective layer. The channel layer may be disposed along a bottom edge of the compound semiconductor layer.

摘要翻译： 提供了一种半导体发光器件。 半导体发光器件可以包括发光结构，电极，反射层，导电支撑构件和沟道层。 发光结构可以包括多个化合物半导体层。 电极可以设置在化合物半导体层上。 反射层可以设置在化合物半导体层之下。 导电支撑构件可以设置在反射层下方。 沟道层可以沿着化合物半导体层的底部边缘设置。

公开(公告)号：US20120112231A1

公开(公告)日：2012-05-10

申请号：US13339513

申请日：2011-12-29

申请人： Hwan Hee JEONG ,  Ji Hyung MOON ,  Sang Youl LEE ,  June O SONG

发明人： Hwan Hee JEONG ,  Ji Hyung MOON ,  Sang Youl LEE ,  June O SONG

IPC分类号： H01L33/60

CPC分类号： H01L33/42 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers, an electrode on the first conductive type semiconductor layer, a reflective layer under the second conductive type semiconductor layer, a protective layer on an outer portion of the reflective layer, the protective layer including a first portion between the reflective layer and the second conductive layer, and a second portion that extends beyond the second conductive type semiconductor layer; and a light extraction structure including a compound semiconductor on the second portion of the protective layer.

摘要翻译： 公开了一种发光器件和发光器件封装。 发光器件包括在第一和第二导电类型半导体层之间包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光结构，第一导电类型半导体层上的电极，反射 在所述第二导电类型半导体层下面的层，在所述反射层的外部部分上的保护层，所述保护层包括在所述反射层和所述第二导电层之间的第一部分，以及延伸超过所述第二导电类型半导体的第二部分 层; 以及在保护层的第二部分上包括化合物半导体的光提取结构。

公开(公告)号：US08039860B2

公开(公告)日：2011-10-18

申请号：US13024874

申请日：2011-02-10

申请人： Ji Hyung Moon ,  Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Kwang Ki Choi

发明人： Ji Hyung Moon ,  Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Kwang Ki Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/385 ,  H01L33/486 ,  H01L33/62 ,  H01L33/64 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a conductive layer under the second conductive type semiconductor layer; an adhesive layer under the conductive layer; a support member under the adhesive layer; a contact electrode connected to the first conductive type semiconductor layer; a first lead electrode under the support member; a first electrode connecting the contact electrode to the first lead electrode on a first region of the support member; a second electrode connected to at least one of the conductive layer and the adhesive layer on a second region of the support member; a second lead electrode connected to the second electrode under the support member; and a first insulating layer between the contact electrode and the light emitting structure layer.

摘要翻译： 公开了一种发光器件和具有该发光器件的发光器件封装。 发光器件包括发光结构层，该发光结构层包括第一导电类型半导体层，第一导电类型半导体层下面的有源层和有源层下面的第二导电类型半导体层; 第二导电类型半导体层下的导电层; 导电层下方的粘合剂层; 在粘合剂层下面的支撑构件; 连接到所述第一导电类型半导体层的接触电极; 在支撑构件下方的第一引线电极; 在所述支撑构件的第一区域上将所述接触电极连接到所述第一引线电极的第一电极; 在所述支撑构件的第二区域上连接到所述导电层和所述粘合剂层中的至少一个的第二电极; 第二引线电极，其在所述支撑构件的下方连接到所述第二电极; 以及在所述接触电极和所述发光结构层之间的第一绝缘层。

公开(公告)号：US20110215352A1

公开(公告)日：2011-09-08

申请号：US13040984

申请日：2011-03-04

申请人： Hwan Hee Jeong ,  Sang Youl Lee ,  Ji Hyung Moon ,  June O Song ,  Kwang Ki Choi ,  Dae Sung Kang

发明人： Hwan Hee Jeong ,  Sang Youl Lee ,  Ji Hyung Moon ,  June O Song ,  Kwang Ki Choi ,  Dae Sung Kang

IPC分类号： H01L33/32

CPC分类号： H01L33/0079 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/36 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12032 ,  H01L2933/0058 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed is a method of manufacturing a light emitting device. The light emitting device includes a nitride semiconductor layer, an electrode on the nitride semiconductor layer, a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer under the nitride semiconductor layer, and a conductive layer under the light emitting structure. The nitride semiconductor layer has band gap energy lower than band gap energy of the first conductive type semiconductor layer.

摘要翻译： 公开了一种制造发光器件的方法。 发光器件包括氮化物半导体层，氮化物半导体层上的电极，在氮化物半导体层下面的包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构，以及导电 层下发光结构。 氮化物半导体层具有比第一导电型半导体层的带隙能量低的带隙能量。

公开(公告)号：US20110204402A1

公开(公告)日：2011-08-25

申请号：US13030600

申请日：2011-02-18

申请人： Hwan Hee Jeong ,  Sang Youl Lee ,  Ji Hyung Moon ,  June O. Song ,  Kwang Ki Choi

发明人： Hwan Hee Jeong ,  Sang Youl Lee ,  Ji Hyung Moon ,  June O. Song ,  Kwang Ki Choi

IPC分类号： H01L33/40 ,  H01L33/38

CPC分类号： H01L33/385 ,  H01L24/24 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00012 ,  H01L2924/00

摘要： A light emitting device according to the embodiment includes a substrate; a protective layer on the substrate; a electrode layer on the protective layer; a light emitting structure disposed on the electrode layer to generate light and provided with a first semiconductor layer, an active layer under the first semiconductor layer, and a second conductive semiconductor layer under the active layer; and a first electrode having a first end disposed on a top surface of the light emitting structure and a second end disposed on the protective layer. The protective layer comes into Schottky contact with at least one of the electrode layer and the first electrode.

摘要翻译： 根据实施例的发光器件包括基板; 衬底上的保护层; 保护层上的电极层; 发光结构，设置在所述电极层上以产生光并具有第一半导体层，所述第一半导体层下的有源层和所述有源层下的第二导电半导体层; 以及第一电极，其具有设置在所述发光结构的顶表面上的第一端和设置在所述保护层上的第二端。 保护层与电极层和第一电极中的至少一个进行肖特基接触。