Abstract:
A silicon carbide Schottky diode device with mesa terminations and the manufacturing method thereof are provided. The silicon carbide Schottky diode device includes an n-type epitaxial silicon carbide layer with mesa terminations on an n-type silicon carbide substrate, two p-type regions in the n-type epitaxial silicon carbide layer and a Schottky metal contact on the n-type epitaxial silicon carbide layer and the p-type regions, a dielectric layer on sidewalls and planes of the mesa terminations.
Abstract:
A data storing method includes providing a storage space, receiving a data stream, establishing a cluster link when the data stream is stored into the storage space, and before the data stream is completely stored in the storage space, storing a cluster number of a specific node in the cluster link and information about a cluster following the specific node, and setting the content of the specific node as an EOF. A data storage system thereof can access a real-time data stream stored in the storage space, or release the occupied space in the storage space through deleting the file of the real-time data stream, even if the real-time data stream is interrupted abnormally during storage.
Abstract:
This invention discloses a reduced-width, low-error multiplier that can be used in Digital Signal Processing (DSP). Specifically, this invention relates to a reduced-width, low-error multiplier capable of processing digital signals of communication systems such as a timing recovery circuit, a carrier recovery circuit, and a FIR filter, etc. This invention derives a binary compensation vector to compensate for the error caused by the reduction of area without any hardware overhead, and implements the compensation structure of an Array and a Booth multiplier to reduce hardware complexity.