公开(公告)号：US5780314A

公开(公告)日：1998-07-14

申请号：US892467

申请日：1997-07-14

申请人： Hugo Wai-Kung Chan

发明人： Hugo Wai-Kung Chan

IPC分类号： H01L39/02 ,  H01B12/04 ,  H01L21/60 ,  H01L23/44 ,  H01L23/498 ,  H01L27/18 ,  H01L39/24

CPC分类号： H01L24/81 ,  H01L23/445 ,  H01L23/49816 ,  H01L23/49888 ,  H01L27/18 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3011 ,  H01L2924/3025 ,  Y10S505/703 ,  Y10S505/856

摘要： A superconductive electrical device is operable simultaneously at relatively higher temperatures, i.e., 60-90K, and at relatively lower temperatures, i.e., less than 12K. The device comprises a non-superconductive substrate with two regions, a first relatively high temperature region and a second relatively low temperature region. A high temperature superconductor is on the first region and a portion of the second region. A dielectric layer is on the high temperature superconductor. A low temperature superconductor is on the second region of the substrate and on a portion of the dielectric layer. Integrated circuit chips can be secured to both superconductors, thereby yielding a superconductive multi-chip module operable at two different temperatures, such as in a cryo-cooler with two temperature stages.

摘要翻译： 超导电气装置可以在相对较高的温度即60-90K的温度下和在相对较低的温度即小于12K的温度下同时操作。 该器件包括具有两个区域的非超导衬底，第一较高温度区域和第二较低温度区域。 高温超导体位于第一区域和第二区域的一部分上。 介电层位于高温超导体上。 低温超导体位于衬底的第二区域和电介质层的一部分上。 集成电路芯片可以固定到两个超导体上，从而产生可在两个不同温度下操作的超导多芯片模块，例如在具有两个温度级的低温冷却器中。

公开(公告)号：US5773875A

公开(公告)日：1998-06-30

申请号：US606177

申请日：1996-02-23

申请人： Hugo Wai-Kung Chan

发明人： Hugo Wai-Kung Chan

IPC分类号： H01L39/02 ,  H01B12/04 ,  H01L21/60 ,  H01L23/44 ,  H01L23/498 ,  H01L27/18 ,  H01L39/00 ,  H01L23/34 ,  H04B1/00

CPC分类号： H01L24/81 ,  H01L23/445 ,  H01L23/49816 ,  H01L23/49888 ,  H01L27/18 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3011 ,  H01L2924/3025 ,  Y10S505/703 ,  Y10S505/856

摘要： A superconductive electrical device is operable simultaneously at relatively higher temperatures, i.e., 60-90K, and at relatively lower temperatures, i.e., less than 12K. The device comprises a non-superconductive substrate with two regions, a first relatively high temperature region and a second relatively low temperature region. A high temperature superconductor is on the first region and a portion of the second region. A dielectric layer is on the high temperature superconductor. A low temperature superconductor is on the second region of the substrate and on a portion of the dielectric layer. Integrated circuit chips can be secured to both superconductors, thereby yielding a superconductive multi-chip module operable at two different temperatures, such as in a cryo-cooler with two temperature stages.

摘要翻译： 超导电气装置可以在相对较高的温度即60-90K的温度下和在相对较低的温度即小于12K的温度下同时操作。 该器件包括具有两个区域的非超导衬底，第一较高温度区域和第二较低温度区域。 高温超导体位于第一区域和第二区域的一部分上。 介电层位于高温超导体上。 低温超导体位于衬底的第二区域和电介质层的一部分上。 集成电路芯片可以固定到两个超导体上，从而产生可在两个不同温度下操作的超导多芯片模块，例如在具有两个温度级的低温冷却器中。

公开(公告)号：US5863868A

公开(公告)日：1999-01-26

申请号：US937372

申请日：1997-09-25

申请人： Hugo Wai-Kung Chan ,  Kenneth P. Daly ,  James M. Murduck

发明人： Hugo Wai-Kung Chan ,  Kenneth P. Daly ,  James M. Murduck

IPC分类号： H01L39/22 ,  G01B39/00 ,  H01L29/06 ,  G01P39/00

CPC分类号： H01L39/225

摘要： A SQUID 10 was multiple junctions, each junction allowing a critical current to flow therethrough. The SQUID 10 comprises a laminar structure including: (a) a substantially planar substrate 12; (b) a first high temperature superconductive layer 14 of substantially uniform thickness deposited on the substrates; (c) a dielectric layer 16 deposited on the first superconductive layer 14, the dielectric layer 16 comprising a planar level segment 18 having two ramp segments defining SQUID junctions at opposing ends 20 and defining SQUID hole; and (d) a second high temperature superconductive layer 24 of substantially uniform thickness deposited on the dielectric layer 16, the second high temperature superconductive layer 24 covering all three segments of the dielectric layer 16. A magnetic field substantially parallel to the substrate applied to the SQUID hole modulates a critical current flowing through the junctions while minimizing magnetic field penetration into the junctions and minimizing SQUID loop inductance.

摘要翻译： SQUID 10是多个连接点，每个连接点允许临界电流流过。 SQUID 10包括层状结构，包括：（a）基本平坦的基板12; （b）沉积在基板上的基本均匀厚度的第一高温超导层14; （c）沉积在第一超导层14上的电介质层16，介电层16包括平坦的电平段18，该平面电平段18具有在相对端20处限定SQUID结并限定SQUID孔的两个斜坡段; 和（d）沉积在电介质层16上的基本上均匀厚度的第二高温超导层24，第二高温超导层24覆盖电介质层16的所有三个段。基本上平行于衬底的磁场施加到 SQUID空穴调制流过结的临界电流，同时最小化磁场穿入接头并最小化SQUID回路电感。