公开(公告)号：US20110193089A1

公开(公告)日：2011-08-11

申请号：US12753098

申请日：2010-04-01

申请人： Cheng-Wei Chou ,  Hsueh-Hsing Lu ,  Hung-Che Ting ,  Tsung-Hsiang Shih ,  Chia-Yu Chen

发明人： Cheng-Wei Chou ,  Hsueh-Hsing Lu ,  Hung-Che Ting ,  Tsung-Hsiang Shih ,  Chia-Yu Chen

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A pixel structure including a substrate, a gate, an insulation layer, a metal oxide semiconductor (MOS) layer, a source and a drain, at least one film layer, and a first electrode layer is provided. The gate is disposed on the substrate. The insulation layer covers the gate. The MOS layer is disposed on the insulation layer above the gate. The source and the drain are disposed on the MOS layer. The film layer covers the MOS layer and includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks ultraviolet light from reaching the MOS layer. The first electrode layer is electrically connected to the source or the drain.

摘要翻译： 提供了包括基板，栅极，绝缘层，金属氧化物半导体（MOS）层，源极和漏极，至少一个膜层和第一电极层的像素结构。 栅极设置在基板上。 绝缘层覆盖门。 MOS层设置在栅极上方的绝缘层上。 源极和漏极设置在MOS层上。 膜层覆盖MOS层，并且包括透明光催化材料，其中透明光催化材料阻挡紫外光到达MOS层。 第一电极层电连接到源极或漏极。

公开(公告)号：US08541779B1

公开(公告)日：2013-09-24

申请号：US13606027

申请日：2012-09-07

申请人： Hong-Syu Chen ,  Shou-Wei Fang ,  Jen-Yu Lee ,  Tsung-Hsiang Shih ,  Hsueh-Hsing Lu ,  Chia-Yu Chen

发明人： Hong-Syu Chen ,  Shou-Wei Fang ,  Jen-Yu Lee ,  Tsung-Hsiang Shih ,  Hsueh-Hsing Lu ,  Chia-Yu Chen

IPC分类号： H01L29/08

CPC分类号： H01L27/3246

摘要： A pixel structure of an organic electroluminescence apparatus includes at least an active device connected to a scan line and a data line, a first electrode, a dielectric material layer, a first isolating layer, a second isolating layer, an organic light-emitting material layer and a second electrode. The dielectric material layer is disposed on the first electrode and has a first opening to expose the first electrode. The first isolating layer disposed on the dielectric material layer includes an oxide semiconductor material and has a second opening to expose the first electrode. The second isolating layer is disposed on the first isolating layer and has a third opening to expose the first electrode in the first opening and the first isolating layer in a sidewall of the second opening. The organic light-emitting material layer is in the third opening. The second electrode is on the organic light-emitting layer.

摘要翻译： 有机电致发光装置的像素结构至少包括连接到扫描线和数据线的有源器件，第一电极，电介质材料层，第一隔离层，第二隔离层，有机发光材料层 和第二电极。 介电材料层设置在第一电极上，并具有第一开口以暴露第一电极。 设置在电介质材料层上的第一绝缘层包括氧化物半导体材料，并具有第二开口以暴露第一电极。 第二绝缘层设置在第一隔离层上，并且具有第三开口以暴露第一开口中的第一电极和第二开口的侧壁中的第一隔离层。 有机发光材料层位于第三开口内。 第二电极在有机发光层上。

公开(公告)号：US20130134425A1

公开(公告)日：2013-05-30

申请号：US13615661

申请日：2012-09-14

申请人： Yi-Chen Chung ,  Chia-Yu Chen ,  Hui-Ling Ku ,  Yu-Hung Chen ,  Chi-Wei Chou ,  Fan-Wei Chang ,  Hsueh-Hsing Lu ,  Hung-Che Ting

发明人： Yi-Chen Chung ,  Chia-Yu Chen ,  Hui-Ling Ku ,  Yu-Hung Chen ,  Chi-Wei Chou ,  Fan-Wei Chang ,  Hsueh-Hsing Lu ,  Hung-Che Ting

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L27/15 ,  H01L33/08

CPC分类号： H01L27/1288 ,  H01L21/28008 ,  H01L21/31133 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L2227/323

摘要： A manufacturing method of an array substrate includes the following steps. A gate electrode and a gate insulator layer are successively formed on a substrate. A semiconductor layer, an etching stop layer, a hard mask layer, and a second patterned photoresist are successively formed on the gate insulator layer. The second patterned photoresist is employed for performing an over etching process to the hard mask layer to form a patterned hard mask layer. The second patterned photoresist is employed for performing a first etching process to the etching stop layer. The second patterned photoresist is then employed for performing a second etching process to the semiconductor layer to form a patterned semiconductor layer. The etching stop layer uncovered by the patterned hard mask layer is then removed for forming a patterned etching stop layer.

摘要翻译： 阵列基板的制造方法包括以下步骤。 在基板上依次形成栅极电极和栅极绝缘体层。 在栅极绝缘体层上依次形成半导体层，蚀刻停止层，硬掩模层和第二图案化光致抗蚀剂。 第二图案化的光致抗蚀剂用于对硬掩模层进行过蚀刻工艺以形成图案化的硬掩模层。 第二图案化光刻胶用于对蚀刻停止层进行第一蚀刻处理。 然后使用第二图案化的光致抗蚀剂来对半导体层执行第二蚀刻工艺以形成图案化的半导体层。 由图案化的硬掩模层未覆盖的蚀刻停止层然后被去除以形成图案化的蚀刻停止层。

公开(公告)号：US08969146B2

公开(公告)日：2015-03-03

申请号：US13615661

申请日：2012-09-14

申请人： Yi-Chen Chung ,  Chia-Yu Chen ,  Hui-Ling Ku ,  Yu-Hung Chen ,  Chi-Wei Chou ,  Fan-Wei Chang ,  Hsueh-Hsing Lu ,  Hung-Che Ting

发明人： Yi-Chen Chung ,  Chia-Yu Chen ,  Hui-Ling Ku ,  Yu-Hung Chen ,  Chi-Wei Chou ,  Fan-Wei Chang ,  Hsueh-Hsing Lu ,  Hung-Che Ting

IPC分类号： H01L21/84

CPC分类号： H01L27/1288 ,  H01L21/28008 ,  H01L21/31133 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L2227/323

摘要： A manufacturing method of an array substrate includes the following steps. A gate electrode and a gate insulator layer are successively formed on a substrate. A semiconductor layer, an etching stop layer, a hard mask layer, and a second patterned photoresist are successively formed on the gate insulator layer. The second patterned photoresist is employed for performing an over etching process to the hard mask layer to form a patterned hard mask layer. The second patterned photoresist is employed for performing a first etching process to the etching stop layer. The second patterned photoresist is then employed for performing a second etching process to the semiconductor layer to form a patterned semiconductor layer. The etching stop layer uncovered by the patterned hard mask layer is then removed for forming a patterned etching stop layer.

摘要翻译： 阵列基板的制造方法包括以下步骤。 在基板上依次形成栅极电极和栅极绝缘体层。 在栅极绝缘体层上依次形成半导体层，蚀刻停止层，硬掩模层和第二图案化光致抗蚀剂。 第二图案化的光致抗蚀剂用于对硬掩模层进行过蚀刻工艺以形成图案化的硬掩模层。 第二图案化光刻胶用于对蚀刻停止层进行第一蚀刻处理。 然后使用第二图案化的光致抗蚀剂来对半导体层执行第二蚀刻工艺以形成图案化的半导体层。 由图案化的硬掩模层未覆盖的蚀刻停止层然后被去除以形成图案化的蚀刻停止层。