公开(公告)号：US08936679B2

公开(公告)日：2015-01-20

申请号：US13137812

申请日：2011-09-14

申请人： Hironori Banba ,  Hiromichi Isogai ,  Yoshiaki Abe ,  Takashi Ishikawa ,  Shingo Narimatsu ,  Jun Nakao ,  Hiroyuki Abiko ,  Michihiro Ohwa

发明人： Hironori Banba ,  Hiromichi Isogai ,  Yoshiaki Abe ,  Takashi Ishikawa ,  Shingo Narimatsu ,  Jun Nakao ,  Hiroyuki Abiko ,  Michihiro Ohwa

IPC分类号： C30B15/22 ,  C30B15/30 ,  C30B29/06

CPC分类号： C30B15/22 ,  C30B15/30 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1072

摘要： According to one exemplary embodiment, a single crystal pulling-up apparatus of pulling-up silicon single crystals by a Czochralski method, is provided with: a neck diameter measuring portion which measures a diameter of a grown neck portion; a first compensation portion which outputs a first compensated pulling-up speed for the seed crystals based on a difference between a measured value of the diameter of the neck portion and a target value of the neck portion diameter previously stored; a second compensation portion which outputs a second pulling-up speed while limiting an upper limit of the first pulling-up speed to a first limit value; and a crucible rotation number compensation portion which lowers the number of a rotation of a crucible at least in a period where the upper limit of the first pulling-up speed is limited to the first limit value.

摘要翻译： 根据一个示例性实施例，提供了通过切克劳斯基法（Czochralski method）提升单晶硅的单晶提拉装置：颈部直径测量部分，其测量生长的颈部的直径; 第一补偿部，其基于颈部直径的测量值与预先存储的颈部直径的目标值之间的差，输出晶种的第一补偿提升速度; 第二补偿部，其将第一上拉速度的上限限制为第一限制值，输出第二提升速度; 以及至少在第一提升速度的上限被限制到第一限制值的期间，降低坩埚的旋转次数的坩埚旋转数补偿部。

公开(公告)号：US20120067272A1

公开(公告)日：2012-03-22

申请号：US13137812

申请日：2011-09-14

申请人： Hironori Banba ,  Hiromichi Isogai ,  Yoshiaki Abe ,  Takashi Ishikawa ,  Shingo Narimatsu ,  Jun Nakao ,  Hiroyuki Abiko ,  Michihiro Ohwa

发明人： Hironori Banba ,  Hiromichi Isogai ,  Yoshiaki Abe ,  Takashi Ishikawa ,  Shingo Narimatsu ,  Jun Nakao ,  Hiroyuki Abiko ,  Michihiro Ohwa

IPC分类号： C30B15/22 ,  C30B15/30

CPC分类号： C30B15/22 ,  C30B15/30 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1072

摘要： According to one exemplary embodiment, a single crystal pulling-up apparatus of pulling-up silicon single crystals by a Czochralski method, is provided with: a neck diameter measuring portion which measures a diameter of a grown neck portion; a first compensation portion which outputs a first compensated pulling-up speed for the seed crystals based on a difference between a measured value of the diameter of the neck portion and a target value of the neck portion diameter previously stored; a second compensation portion which outputs a second pulling-up speed while limiting an upper limit of the first pulling-up speed to a first limit value; and a crucible rotation number compensation portion which lowers the number of a rotation of a crucible at least in a period where the upper limit of the first pulling-up speed is limited to the first limit value.

摘要翻译： 根据一个示例性实施例，提供了通过切克劳斯基法（Czochralski method）提升单晶硅的单晶提拉装置：颈部直径测量部分，其测量生长的颈部的直径; 第一补偿部，其基于颈部直径的测量值与预先存储的颈部直径的目标值之间的差，输出晶种的第一补偿提升速度; 第二补偿部，其将第一上拉速度的上限限制为第一限制值，输出第二提升速度; 以及至少在第一提升速度的上限被限制到第一限制值的期间，降低坩埚的旋转次数的坩埚旋转数补偿部。