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公开(公告)号:US06876323B2
公开(公告)日:2005-04-05
申请号:US10338886
申请日:2003-01-09
CPC分类号: H01Q21/0087 , H01Q21/0025 , H01Q23/00
摘要: A radar system with a phase controlled antenna array that contains a number of data and supply networks (2), which are installed so that they are interchangeable, and a transmit/receive module (3) containing a transmitter and receiver circuit (4) as well as a number of circulator circuits (8) and a number of antenna elements (9) that are coupled via a circulator circuit (8) to the transmitter and receiver circuit (4). Transmitter and receiver circuits (4), circulator circuits (8), and antenna elements (9) are combined in each transmit/receive module (3) and the transmit/receive modules (3) are arranged interchangeably on the radiation side of the radar or EW system (1).
摘要翻译: 一种具有相控天线阵列的雷达系统,其包含多个数据和供电网络(2),其被安装成可互换,以及包含发射机和接收机电路(4)的发射/接收模块(3) 以及通过循环器电路(8)耦合到发射机和接收机电路(4)的多个环行器电路(8)和多个天线元件(9)。 发射机和接收机电路(4),环行器电路(8)和天线元件(9)组合在每个发射/接收模块(3)中,并且发射/接收模块(3)可互换地布置在雷达的辐射侧 或EW系统(1)。
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公开(公告)号:US06365477B1
公开(公告)日:2002-04-02
申请号:US09363746
申请日:1999-07-30
申请人: Christoph Gässler , Helmut Leier , Hyunchol Shin
发明人: Christoph Gässler , Helmut Leier , Hyunchol Shin
IPC分类号: H01L21331
CPC分类号: H01L29/66318 , H01L29/7371
摘要: A method for producing a heterobipolar transistor, arranged on a substrate of semiconductor material on which is grown a semiconductor sequence for a collector, a base and an emitter, which method includes: etching the layer sequence to form a transistor with a mesa structure, carrying out a first planarizing step to the upper limit of the base during which the surface of the base is protected by a protecting portion of the emitter layer adjacent to the base; removing this protective layer; depositing a metal contact layer for the base; carrying out a second planarizing step for the base emitter mesa; and finally depositing a connecting metallization layer for the collector, base and emitter.
摘要翻译: 一种异质双极晶体管的制造方法,其特征在于,在半导体材料的基板上配置有用于集电极,基极和发射极的半导体序列的方法,所述方法包括:蚀刻所述层序列以形成具有台面结构的晶体管, 将第一平面化步骤转移到基底的上限,其中基底的表面被邻近基底的发射极层的保护部分保护; 去除该保护层; 为基底沉积金属接触层; 对基极发射极台面进行第二平面化步骤; 最后沉积用于集电极,基极和发射极的连接金属化层。
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