公开(公告)号：US09667891B2

公开(公告)日：2017-05-30

申请号：US14713446

申请日：2015-05-15

申请人： Min Ah Chae ,  Hee Sung Shim

发明人： Min Ah Chae ,  Hee Sung Shim

IPC分类号： H04N5/347 ,  H04N5/378

CPC分类号： H04N5/347 ,  H04N5/378

摘要： Disclosed is an image sensor that includes a pixel array including a plurality of unit pixels in a matrix having rows and columns, a binning sampling unit configured to (i) amplify with different gains signals from unit pixels selected from the unit pixels in each of the columns, and (ii) output a binning sampling signal according to an average of the amplified signals, and an analog-to-digital converter configured to convert the binning sampling signal to a digital signal.

公开(公告)号：US20160037092A1

公开(公告)日：2016-02-04

申请号：US14713446

申请日：2015-05-15

申请人： Min Ah CHAE ,  Hee Sung SHIM

发明人： Min Ah CHAE ,  Hee Sung SHIM

IPC分类号： H04N5/347 ,  H04N5/378 ,  H04N5/3745

CPC分类号： H04N5/347 ,  H04N5/378

摘要： Disclosed is an image sensor that includes a pixel array including a plurality of unit pixels in a matrix having rows and columns, a binning sampling unit configured to (i) amplify with different gains signals from unit pixels selected from the unit pixels in each of the columns, and (ii) output a binning sampling signal according to an average of the amplified signals, and an analog-to-digital converter configured to convert the binning sampling signal to a digital signal.

摘要翻译： 公开了一种图像传感器，包括：像素阵列，其包括具有行和列的矩阵中的多个单位像素;合并采样单元，被配置为（i）用来自从每个单元像素中选择的单位像素的单位像素的不同增益信号进行放大 列，以及（ii）根据放大信号的平均值输出合并采样信号;以及模数转换器，被配置为将分箱采样信号转换为数字信号。

公开(公告)号：US08237100B2

公开(公告)日：2012-08-07

申请号：US12574761

申请日：2009-10-07

申请人： Hee Sung Shim

发明人： Hee Sung Shim

IPC分类号： H01L27/00 ,  H01L31/062

CPC分类号： H01L27/14632 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14687 ,  H01L27/14689

摘要： An image sensor is provided. The image sensor comprises a readout circuitry, a first image sensing device, an interconnection, and a second image sensing device. The readout circuitry is disposed in a first substrate. The first image sensing device is disposed at one side of the readout circuitry of the first substrate. The interconnection is disposed over the first substrate and electrically connected to the readout circuitry. The second image sensing device is disposed over the interconnection.

摘要翻译： 提供图像传感器。 图像传感器包括读出电路，第一图像感测装置，互连和第二图像感测装置。 读出电路设置在第一衬底中。 第一图像感测装置设置在第一基板的读出电路的一侧。 互连设置在第一基板上并电连接到读出电路。 第二图像感测装置布置在互连上。

公开(公告)号：US07632699B2

公开(公告)日：2009-12-15

申请号：US11612600

申请日：2006-12-19

申请人： Hee Sung Shim

发明人： Hee Sung Shim

IPC分类号： H01L21/00

CPC分类号： H01L27/14603 ,  H01L27/1463

摘要： A method for manufacturing a CMOS image sensor that independently forms a poly routing line connected to a gate poly of a reset transistor is provided. In an embodiment, a semiconductor substrate is prepared defining a device isolation region and an active region. Subsequently, a plurality of gate polys are formed on a predetermined portion of the active region. A photodiode is formed in a portion of the semiconductor substrate located at one side of one of the plurality of gate polys. After an oxide layer is deposited on the semiconductor substrate including the gate polys, the oxide layer is selectively removed to form oxide layer patterns for exposing a portion of the plurality of gate polys. After a polysilicon layer is deposited on the oxide layer pattern, the polysilicon layer is selectively removed to form a routing line connected to the portion of the plurality of gate polys.

摘要翻译： 提供一种用于制造独立地形成连接到复位晶体管的栅极poly的多路布线的CMOS图像传感器的方法。 在一个实施例中，制备限定器件隔离区域和有源区域的半导体衬底。 随后，在活性区域的预定部分上形成多个栅极聚合物。 在半导体衬底的位于多个栅极聚合物之一的一侧的部分中形成光电二极管。 在包括栅极聚合物的半导体衬底上沉积氧化物层之后，选择性地除去氧化物层以形成用于暴露多个栅极聚合物的一部分的氧化物层图案。 在多晶硅层沉积在氧化物层图案上之后，选择性地去除多晶硅层以形成连接到多个栅极聚合物的部分的布线。

公开(公告)号：US07592196B2

公开(公告)日：2009-09-22

申请号：US12001705

申请日：2007-12-11

申请人： Hee Sung Shim

发明人： Hee Sung Shim

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14609

摘要： A method for fabricating a CMOS image sensor may include forming an isolation layer defining an active area on a semiconductor substrate, forming first and second gate electrodes in the transistor area of the semiconductor substrate, forming a photodiode area in the semiconductor substrate at a first side of the first gate electrode, forming an oxide layer over the photodiode area, the oxide layer having a thickness greater than that of the dielectric layer, forming a source/drain extension area in the semiconductor substrate at a second side of the second gate electrode and between the first and second gate electrodes, forming source/drain regions in the transistor area of the semiconductor substrate by ion implantation through the dielectric layer, and forming a complementary ion implantation region in the photodiode area through the oxide layer.

摘要翻译： CMOS图像传感器的制造方法可以包括在半导体衬底上形成限定有源区的隔离层，在半导体衬底的晶体管区域形成第一和第二栅电极，在半导体衬底的第一侧形成光电二极管区域 在所述光电二极管区域上形成氧化物层，所述氧化物层的厚度大于所述电介质层的厚度，在所述第二栅电极的第二侧在所述半导体衬底中形成源极/漏极扩展区域，以及 在第一和第二栅电极之间，通过离子注入通过电介质层在半导体衬底的晶体管区域中形成源/漏区，并通过氧化物层在光电二极管区域中形成互补离子注入区。

公开(公告)号：US20090166779A1

公开(公告)日：2009-07-02

申请号：US12344538

申请日：2008-12-28

申请人： Hee-Sung Shim

发明人： Hee-Sung Shim

IPC分类号： H01L31/02 ,  H01L21/00

CPC分类号： H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1469

摘要： Embodiments relate to an image sensor and a method of manufacturing an image sensor. According to embodiments, an image sensor may include a first substrate, a photodiode, and an ion implantation isolation layer. According to embodiments, circuitry including a metal interconnection may be disposed over the first substrate. A photodiode may be provided in a crystalline semiconductor layer bonded to the first substrate, and electrically connected to the metal interconnection. The ion implantation isolation layer may be provided in the photodiode.

摘要翻译： 实施例涉及图像传感器和图像传感器的制造方法。 根据实施例，图像传感器可以包括第一衬底，光电二极管和离子注入隔离层。 根据实施例，包括金属互连的电路可以设置在第一基板上。 可以在结合到第一基板的结晶半导体层中提供光电二极管，并且电连接到金属互连。 离子注入隔离层可以设置在光电二极管中。

公开(公告)号：US07531391B2

公开(公告)日：2009-05-12

申请号：US11318574

申请日：2005-12-28

申请人： Hee Sung Shim

发明人： Hee Sung Shim

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643

摘要： A CMOS image sensor includes a semiconductor substrate with a first conductive type including a photodiode region and a transistor region, a gate electrode formed on the transistor region of the substrate, a first impurity region with a second conductive type formed in a portion of the semiconductor substrate between the photodiode region and the gate electrode, and a second impurity region with the second conductive type formed in the photodiode region of the semiconductor substrate.

摘要翻译： CMOS图像传感器包括具有包括光电二极管区域和晶体管区域的第一导电类型的半导体衬底，形成在衬底的晶体管区域上的栅电极，形成在半导体的一部分中的具有第二导电类型的第一杂质区域 光电二极管区域和栅电极之间的衬底，以及形成在半导体衬底的光电二极管区域中的具有第二导电类型的第二杂质区域。

公开(公告)号：US20080160660A1

公开(公告)日：2008-07-03

申请号：US12001705

申请日：2007-12-11

申请人： Hee Sung Shim

发明人： Hee Sung Shim

IPC分类号： H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/14609

摘要： A method for fabricating a CMOS image sensor may include forming an isolation layer defining an active area on a semiconductor substrate, forming first and second gate electrodes in the transistor area of the semiconductor substrate, forming a photodiode area in the semiconductor substrate at a first side of the first gate electrode, forming an oxide layer over the photodiode area, the oxide layer having a thickness greater than that of the dielectric layer, forming a source/drain extension area in the semiconductor substrate at a second side of the second gate electrode and between the first and second gate electrodes, forming source/drain regions in the transistor area of the semiconductor substrate by ion implantation through the dielectric layer, and forming a complementary ion implantation region in the photodiode area through the oxide layer.

摘要翻译： CMOS图像传感器的制造方法可以包括在半导体衬底上形成限定有源区的隔离层，在半导体衬底的晶体管区域形成第一和第二栅电极，在半导体衬底的第一侧形成光电二极管区域 在所述光电二极管区域上形成氧化物层，所述氧化物层的厚度大于所述电介质层的厚度，在所述第二栅电极的第二侧在所述半导体衬底中形成源极/漏极扩展区域，以及 在第一和第二栅电极之间，通过离子注入通过电介质层在半导体衬底的晶体管区域中形成源/漏区，并通过氧化物层在光电二极管区域中形成互补离子注入区。

公开(公告)号：US20070155038A1

公开(公告)日：2007-07-05

申请号：US11612619

申请日：2006-12-19

申请人： Hee Sung Shim

发明人： Hee Sung Shim

IPC分类号： H01L21/00

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： A method of manufacturing a complementary metal oxide semiconductor (CMOS) image sensor is provided. The method can include the steps of: providing a semiconductor substrate having an active region and an isolation region defined thereon; forming a photodiode at a photodiode area of the active region; forming first and second gate polys on a transistor region of the active region; forming a floating diffusion region on the semiconductor substrate between the first and second gate polys for receiving electrons transferred from the photodiode; and forming a floating diffusion node region at a part of the floating diffusion region for forming a metal contact. The floating diffusion region can be formed independently of the floating diffusion node region, so that a junction leakage current generated from the floating diffusion node region can be controlled.

摘要翻译： 提供了制造互补金属氧化物半导体（CMOS）图像传感器的方法。 该方法可以包括以下步骤：提供具有限定在其上的有源区和隔离区的半导体衬底; 在有源区的光电二极管区域形成光电二极管; 在有源区域的晶体管区域上形成第一和第二栅极聚合物; 在所述第一和第二栅极聚合物之间的所述半导体衬底上形成用于接收从所述光电二极管转移的电子的浮动扩散区; 以及在用于形成金属接触的浮动扩散区域的一部分处形成浮动扩散节点区域。 可以独立于浮动扩散节点区域形成浮动扩散区域，从而可以控制从浮动扩散节点区域产生的结漏电流。

公开(公告)号：US09456160B2

公开(公告)日：2016-09-27

申请号：US14684706

申请日：2015-04-13

申请人： Hee Sung Shim ,  Yong In Han

发明人： Hee Sung Shim ,  Yong In Han

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N5/378 ,  H04N5/347 ,  H04N5/353

CPC分类号： H04N5/378 ,  H04N5/347 ,  H04N5/3535

摘要： Disclosed is an image sensor. The disclosed image sensor includes a pixel array including a plurality of unit pixels arranged in a matrix form having rows and columns, a binning sampling unit configured to output a binning sampling signal according to an average of signals from two or more unit pixels selected from among the unit pixels of each of the columns, and an analog-to-digital converter configured to convert the binning sampling signal to a digital signal. The selected unit pixels have different exposure times.

摘要翻译： 公开了一种图像传感器。 所公开的图像传感器包括：像素阵列，包括以行和列为矩阵形式布置的多个单位像素;配合采样单元，被配置为根据来自两个或更多个单位像素的信号的平均值输出合并采样信号， 每个列的单位像素和被配置为将分箱采样信号转换为数字信号的模拟 - 数字转换器。 所选单位像素具有不同的曝光时间。