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公开(公告)号：US06855478B2
公开(公告)日：2005-02-15
申请号：US10297957
申请日：2001-06-14
申请人： Robert J. DeVoe , Catherine A. Leatherdale , Guoping Mao , Patrick R. Fleming , Harvey W. Kalweit
发明人： Robert J. DeVoe , Catherine A. Leatherdale , Guoping Mao , Patrick R. Fleming , Harvey W. Kalweit
IPC分类号： B29C67/00 , G02B3/00 , G02B3/06 , G02B5/18 , G02B6/122 , G02B6/13 , G02B6/138 , G03F7/038 , G03F7/20 , G03C1/73 , G02B6/00
CPC分类号： G03C1/73 , B29C64/135 , B29L2011/0075 , B33Y10/00 , B33Y70/00 , G02B3/06 , G02B6/1221 , G02B6/13 , G02B6/138 , G03F7/0387 , G03F7/2053
摘要： Method of fabricating an optical element. A photodefinable composition is provided that includes (i) a hydrophobic, photodefinable polymer, said photodefinable polymer having a glass transition temperature in the cured state of at least about 80° C.; and (ii) a multiphoton photoinitiator system comprising at least one multiphoton photosensitizer and preferably at least one phtoinitiator that is capable of being photosensitized by the photosensitizer. One or more portions of the composition are imagewise exposed to the electromagnetic energy under conditions effective to photodefinably form at least a portion of a three-dimensional optical element.
摘要翻译： 制造光学元件的方法。 提供了一种可光分解的组合物，其包括（i）疏水的光可定义聚合物，所述光可定义聚合物的玻璃化转变温度在至少约80℃的固化状态; 和（ii）多光子光引发剂体系，其包含至少一种多光子光敏剂，优选至少一种光敏引发剂，其能够被光敏剂光敏化。 组合物的一个或多个部分在有效地光可定义地形成三维光学元件的至少一部分的条件下成像地暴露于电磁能。
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公开(公告)号：US07118845B2
公开(公告)日：2006-10-10
申请号：US10455675
申请日：2003-06-05
IPC分类号： C08F2/50
CPC分类号： C08F2/50 , G03F7/0047 , G03F7/029 , G03F7/0295 , G03F7/031 , G03F7/038 , G03F7/2053 , Y10S430/114 , Y10S430/115 , Y10S430/116 , Y10S430/117
摘要： A process for fabricating of an article by exposing a photoreactive composition to light under multiphoton absorption conditions. The light passes through an optical system having a final optical element having a numeric aperture in a range of from 0.65 to 1.25, inclusive.
摘要翻译： 一种通过将光反应性组合物在多光子吸收条件下曝光来制造制品的方法。 光通过具有最小光学元件的光学系统，该光学元件的数值孔径在0.65至1.25的范围内，包括端值。
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公开(公告)号：US06941052B2
公开(公告)日：2005-09-06
申请号：US10325582
申请日：2002-12-19
CPC分类号： G02B6/02114 , C03C25/6208 , G02B6/02133 , G02B6/02185
摘要： A refractive index grating comprising an optical fiber having at least one radiation-sensitized portion, in a longitudinal section of the optical fiber, containing a periodic variation of refractive index. The refractive index grating has an initial magnitude that changes no more than two percent after conditioning at a temperature of 300° C. for a time of ten minutes.
摘要翻译： 折射率光栅，包括在光纤的纵向截面中具有至少一个辐射敏化部分的光纤，其包含折射率的周期性变化。 折射率光栅的初始幅度在300℃的温度下调节10分钟之后变化不超过2％。
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公开(公告)号：US4148133A
公开(公告)日：1979-04-10
申请号：US904085
申请日：1978-05-08
IPC分类号： H01L21/28 , H01L21/311 , H01L21/314 , H01L21/336 , H01L21/768 , H01L21/02
CPC分类号： H01L29/66568 , H01L21/31111 , H01L21/3144 , H01L21/76804 , H01L21/28167 , H01L21/28211 , Y10S438/945
摘要： An improved method is disclosed for etching the thick field insulator films of silicon-oxy-nitride, during the fabrication process of metal oxide semiconductor (MOS) devices, wherein a polycrystalline silicon etch mask is used in conjunction with an acid etchant to etch the gate and interconnect openings through the thick field insulator to the source, gate and chain regions of the MOS devices for a memory array.
摘要翻译： 公开了一种用于在金属氧化物半导体（MOS）器件的制造工艺期间蚀刻硅 - 氮化物的厚场绝缘膜的改进方法，其中多晶硅蚀刻掩模与酸蚀刻剂结合使用以蚀刻栅极 并且将穿过厚场绝缘体的开口互连到用于存储器阵列的MOS器件的源极，栅极和链区。
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