摘要:
For a radiation imaging inspection system, apparatus, and/or method, the system, particularly a trailer security inspection system, includes a protective wall forming an inspection passage for passage of a trailer, a radiation imaging system effecting security inspection of the trailer passing through the inspection passage, and a fraction arrangement for hauling the trailer.
摘要:
The present invention relates to the TV field. An auto-broadcasting TV unit and an auto-broadcasting method are provided in the present invention to solve the problem of complicated operations for broadcast of a TV terminal with the existing technology. The device includes an antenna, a TV signal processing module, a sensor, and a judging module. The TV signal processing module is configured to process signals received by the antenna and display signals to a user. The sensor is configured to detect the use status of the antenna and send the status information of the antenna to the judging module. The judging module is configured to turn on or turn off the TV signal processing module according to the status information. The benefit of the present invention is to simplify the operation for a user.
摘要:
A utilization method and apparatus for guard band, used under the premise that side-channel interference is suppressed when a time division duplex (TDD) system and a frequency division duplex (FDD) system coexist, utilizes guard band effectively and increases utilization rate of mobile communication spectrum resources. The utilization method for guard band comprises: a first base station in a TDD system allocates a first frequency resource within an uplink guard band to a first user equipment and issues resource scheduling information (S1001); the first base station receives the uplink data carried in uplink time units on the first frequency resource, which is sent by the first user equipment according to the resource scheduling information (S 1002); the first base station carries the downlink data in downlink time units and sends the downlink data to the first user equipment on a second frequency resource, the second frequency resource comprises frequency resource in a downlink guard band and/or frequency resource in a TDD band (S1003).
摘要:
A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) flash memory, comprising: preparing a silicon substrate including a silicon oxide-silicon nitride-silicon oxide (ONO) layer, a first polysilicon layer and a first etch stop layer in sequence; etching the first etch stop layer along a direction of bit line; selectively etching the first polysilicon layer with the first etch stop layer as a mask, till the silicon oxide-silicon nitride-silicon oxide (ONO) layer is exposed, the etched first polysilicon layer having an inverse trapezia section along a direction of word line; filling a dielectic layer between portions of the first polysilicon layer, the dielectric layer having a trapezia section along the direction of word line. After the above steps, it becomes easy to remove the portion of the first polysilicon layer on a sidewall of the dielectric layer by vertical etching. Thus, no polysilicon residue will be formed on the sidewall of the dielectric layer. Thereby, the short circuit between different memory cells may be avoided.
摘要:
A method and a system for implementing ring back tones and ring back images in the VP service provides quality-assured and customized ring back tones and ring back images. A control module plays the ring back tones and ring back images for calling UEs through a voice and image channel defined in the VP series of protocols by resolving or pre-negotiating the voice and image coding formats supported by the calling UEs.
摘要:
For a radiation imaging inspection system, apparatus, and/or method, the system, particularly a trailer security inspection system, may include a protective wall forming an inspection passage for passage of a trailer, a radiation imaging system effecting security inspection of the trailer passing through the inspection passage, and a traction arrangement for hauling the trailer.
摘要:
A method for realizing ring back tone and ring back image in video phone service, wherein when the calling subscriber initiates the VP service call, the control module adopts the calling subscriber supported phonetic and image encoding form which are resolved or preliminary arranged, and plays the ring back tone and ring back image to the calling subscriber through the phonetic and image channel in VP telephone series protocol. The invention enables that the VP service in 3G system can provide high quality and uniformly customized ring back tone, and at the same time, it can provide ring back image.
摘要:
A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) flash memory, comprising: preparing a silicon substrate including a silicon oxide-silicon nitride-silicon oxide (ONO) layer, a first polysilicon layer and a first etch stop layer in sequence; etching the first etch stop layer along a direction of bit line; selectively etching the first polysilicon layer with the first etch stop layer as a mask, till the silicon oxide-silicon nitride-silicon oxide (ONO) layer is exposed, the etched first polysilicon layer having an inverse trapezia section along a direction of word line; filling a dielectic layer between portions of the first polysilicon layer, the dielectric layer having a trapezia section along the direction of word line. After the above steps, it becomes easy to remove the portion of the first polysilicon layer on a sidewall of the dielectric layer by vertical etching. Thus, no polysilicon residue will be formed on the sidewall of the dielectric layer. Thereby, the short circuit between different memory cells may be avoided.
摘要:
A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) flash memory includes preparing a silicon substrate including a silicon oxide-silicon nitride-silicon oxide (ONO) layer, a first polysilicon layer and a first etch stop layer in sequence; etching the first etch stop layer along a direction of bit line; selectively etching the first polysilicon layer with the first etch stop layer as a mask, till the silicon oxide-silicon nitride-silicon oxide (ONO) layer is exposed, the etched first polysilicon layer having an inverse trapezia section along a direction of word line; and filling a dielectic layer between portions of the first polysilicon layer, the dielectric layer having a trapezia section along the direction of word line. After the above steps, it becomes easier to remove the portion of the first polysilicon layer on a sidewall of the dielectric layer by vertical etching. Thus, no polysilicon residue will be formed on the sidewall of the dielectric layer, and the short circuit between different memory cells may be avoided.
摘要:
A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) flash memory, comprising: preparing a silicon substrate including a silicon oxide-silicon nitride-silicon oxide (ONO) layer, a first polysilicon layer and a first etch stop layer in sequence; etching the first etch stop layer along a direction of bit line; selectively etching the first polysilicon layer with the first etch stop layer as a mask, till the silicon oxide-silicon nitride-silicon oxide (ONO) layer is exposed, the etched first polysilicon layer having an inverse trapezia section along a direction of word line; filling a dielectic layer between portions of the first polysilicon layer, the dielectric layer having a trapezia section along the direction of word line. After the above steps, it becomes easy to remove the portion of the first polysilicon layer on a sidewall of the dielectric layer by vertical etching. Thus, no polysilicon residue will be formed on the sidewall of the dielectric layer. Thereby, the short circuit between different memory cells may be avoided.