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    Positive electrode of crystalline silicon solar cell having gate rupture prevention function
    2.
    发明授权
    Positive electrode of crystalline silicon solar cell having gate rupture prevention function 有权

    公开(公告)号：US11817511B2

    公开(公告)日：2023-11-14

    申请号：US17262690

    申请日：2019-07-23

    Applicant: Zhejiang Aiko Solar Energy Technology Co., Ltd. ,  Guangdong Aiko Solar Energy Technology Co., Ltd.

    Inventor： Kang-Cheng Lin ,  Mingzhang Feng ,  Jiebin Fang ,  Gang Chen

    IPC: H01L31/0224 ,  H01L31/068

    CPC classification number: H01L31/022433 ,  H01L31/068

    Abstract: Disclosed is a positive electrode of a crystalline silicon solar cell with a break-proof grid function, comprising a positive electrode busbar (1), a positive electrode grid (2), and a break-proof grid structure (3). The break-proof grid structure (3) and the positive electrode grid (2) are integrally printed and formed. The break-proof grid structure (3) is an octagon with a hollow-out groove (4) provided on its rear side. The break-proof grid structure (3) includes a rectangular grid segment (31) located in the middle, and two isosceles trapezoidal grid segments (32) that are located at both sides of the rectangular grid segment (31) and are provided symmetrically with the rectangular grid segment (31) as a center. The rectangular grid segment (31) spans the positive electrode busbar (1), and the left and right ends of the rectangular grid segment (31) extend out of the positive electrode busbar (1). The extended grid segment is a rectangular extensional break-proof grid segment (311). Both ends of the isosceles trapezoidal grid segment (32) respectively are in contact with the extensional break-proof grid segment (311) and the positive electrode grid (2). The hollow-out groove (4) is located within the isosceles trapezoidal grid segment (32) or spans the extensional break-proof grid segment (311) and the isosceles trapezoidal grid segment (32). A break-proof grid design in the positive electrode employs the combination of the octagon and the hollow-out groove, and can effectively reduce the probability of grid breakage when the front-side electrode is printed.

    POSITIVE ELECTRODE OF CRYSTALLINE SILICON SOLAR CELL HAVING GATE RUPTURE PREVENTION FUNCTION
    3.
    发明申请
    POSITIVE ELECTRODE OF CRYSTALLINE SILICON SOLAR CELL HAVING GATE RUPTURE PREVENTION FUNCTION 有权

    公开(公告)号：US20210399151A1

    公开(公告)日：2021-12-23

    申请号：US17262690

    申请日：2019-07-23

    Applicant: Zhejiang Aiko Solar Energy Technology Co., Ltd. ,  Guangdong Aiko Solar Energy Technology Co., Ltd.

    Inventor： Kang-Cheng LIN ,  Mingzhang FENG ,  Jiebin FANG ,  Gang CHEN

    IPC: H01L31/0224 ,  H01L31/068

    Abstract: Disclosed is a positive electrode of a crystalline silicon solar cell with a break-proof grid function, comprising a positive electrode busbar (1), a positive electrode grid (2), and a break-proof grid structure (3). The break-proof grid structure (3) and the positive electrode grid (2) are integrally printed and formed. The break-proof grid structure (3) is an octagon with a hollow-out groove (4) provided on its rear side. The break-proof grid structure (3) includes a rectangular grid segment (31) located in the middle, and two isosceles trapezoidal grid segments (32) that are located at both sides of the rectangular grid segment (31) and are provided symmetrically with the rectangular grid segment (31) as a center. The rectangular grid segment (31) spans the positive electrode busbar (1), and the left and right ends of the rectangular grid segment (31) extend out of the positive electrode busbar (1). The extended grid segment is a rectangular extensional break-proof grid segment (311). Both ends of the isosceles trapezoidal grid segment (32) respectively are in contact with the extensional break-proof grid segment (311) and the positive electrode grid (2). The hollow-out groove (4) is located within the isosceles trapezoidal grid segment (32) or spans the extensional break-proof grid segment (311) and the isosceles trapezoidal grid segment (32). A break-proof grid design in the positive electrode employs the combination of the octagon and the hollow-out groove, and can effectively reduce the probability of grid breakage when the front-side electrode is printed.

    PERC SOLAR CELL CAPABLE OF IMPROVING PHOTOELECTRIC CONVERSION EFFICIENCY AND PREPARATION METHOD THEREOF
    5.
    发明申请
    PERC SOLAR CELL CAPABLE OF IMPROVING PHOTOELECTRIC CONVERSION EFFICIENCY AND PREPARATION METHOD THEREOF 审中-公开

    公开(公告)号：US20200075782A1

    公开(公告)日：2020-03-05

    申请号：US16490862

    申请日：2017-06-24

    Applicant: Guangdong Aiko Solar Energy Technology Co., Ltd. ,  Zhejiang Aiko Solar Energy Technology Co., Ltd.

    Inventor： Chun-Wen LAI ,  Jiebin FANG ,  Gang CHEN

    IPC: H01L31/0216 ,  H01L21/02 ,  H01L31/0224

    Abstract: A PERC solar cell capable of improving photoelectric conversion efficiency and a preparation method thereof are provided. The solar cell consecutively includes, from the bottom up, a rear silver electrode (1), a rear aluminum field (2), a rear silicon nitride film (3), a rear aluminum oxide film (4), P-type silicon (5), N-type silicon (6), a front silicon nitride film (7), and a front silver electrode (8). The rear aluminum field (2) is connected to the P-type silicon (5) via a rear aluminum strip (10). The P-type silicon (5) is a silicon wafer of the cell. The N-type silicon (6) is an N-type emitter formed by diffusion via the front surface of the silicon wafer. The front silicon nitride film (7) is deposited on the front surface of the silicon wafer. The rear aluminum oxide film (4) is deposited on the rear surface of the silicon wafer. The rear aluminum oxide film (3) is deposited after the front silicon nitride film (7) is deposited on the silicon wafer, and the rear surface of the silicon wafer is washed before depositing the rear aluminum oxide film (3). The cell can significantly improves passivation effect of the rear aluminum oxide film and improve the open-circuit voltage and short-circuit current of the cell, thereby increasing photoelectric conversion efficiency of the cell.

    BIFACIAL P-TYPE PERC SOLAR CELL AND MODULE, SYSTEM, AND PREPARATION METHOD THEREOF
    6.
    发明申请
    BIFACIAL P-TYPE PERC SOLAR CELL AND MODULE, SYSTEM, AND PREPARATION METHOD THEREOF 审中-公开

    公开(公告)号：US20190259887A1

    公开(公告)日：2019-08-22

    申请号：US16345735

    申请日：2017-06-07

    Applicant: Guangdong Aiko Solar Energy Technology Co., Ltd. ,  ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD.

    Inventor： Kang-Cheng Lin ,  Jiebin Fang ,  Gang Chen

    IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/18

    Abstract: The present invention discloses a bifacial P-type PERC solar cell, which consecutively comprises a rear silver electrode, rear aluminum grid lines, a rear surface passivation layer, a P-type silicon, an N-type emitter, a front surface silicon nitride film, and a front silver electrode; a laser grooving region is formed at the rear surface passivation layer by laser grooving; the rear aluminum grid lines are connected to the P-type silicon via the laser grooving region; the laser grooving region includes a plurality of sets of laser grooving units arranged horizontally; each of the sets of laser grooving units includes one or more laser grooving bodies arranged horizontally; the rear aluminum grid lines are perpendicular to the laser grooving bodies. The present invention is simple in structure, low in cost, widely applicable, and has a high photoelectric conversion efficiency.

    Bifacial P-type PERC solar cell and module, system, and preparation method thereof
    8.
    发明授权
    Bifacial P-type PERC solar cell and module, system, and preparation method thereof 有权

    公开(公告)号：US10964828B2

    公开(公告)日：2021-03-30

    申请号：US16489670

    申请日：2018-02-28

    Applicant: Guangdong Aiko Solar Energy Technology Co., Ltd. ,  Zhejiang Aiko Solar Energy Technology Co., Ltd.

    Inventor： Kang-Cheng Lin ,  Jiebin Fang ,  Gang Chen

    IPC: H01L31/0224 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/18

    Abstract: Provided are a bifacial P-type PERC solar cell, preparation method, module and system. The bifacial P-type PERC solar cell consecutively comprises a rear silver electrode (1), rear aluminum grid lines (2), a rear passivation layer (3), P-type silicon (4), an N-type emitter (5), a front silicon nitride film (6), and a front silver electrode (7); the rear silver electrode (1) is perpendicularly connected with the rear aluminum grid lines (2), grid line backbones (10) are disposed on the rear aluminum grid lines (2), an outer aluminum grid frame (9) is disposed around the rear aluminum grid lines (2), the grid line backbones (10) are connected with the rear aluminum grid lines (2), and the outer aluminum grid frame (9) is connected with the rear aluminum grid lines (2) and the rear silver electrode (1); a first laser grooving region (8) is formed in the rear passivation layer (3) with laser grooving, and the rear aluminum grid lines (2) are connected to the P-type silicon (4) via the first laser grooving region (8); the first laser grooving region (8) includes a plurality of sets of first laser grooving units (81) arranged horizontally, each of the sets of first laser grooving units (81) includes one or more first laser grooving bodies (82) arranged horizontally, and the rear aluminum grid lines (2) are perpendicular to the first laser grooving bodies (82). The solar cell is simple in structure, low in cost and easy to popularize, and has a high photoelectric conversion efficiency.

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