公开(公告)号：US08039054B2

公开(公告)日：2011-10-18

申请号：US10854942

申请日：2004-05-27

申请人： In-Sung Park ,  Young-Wook Park ,  Myeong-Jin Kim ,  Eun-Taek Yim ,  Han-Mei Choi ,  Kyoung-Seok Kim ,  Beung-Keun Lee

发明人： In-Sung Park ,  Young-Wook Park ,  Myeong-Jin Kim ,  Eun-Taek Yim ,  Han-Mei Choi ,  Kyoung-Seok Kim ,  Beung-Keun Lee

IPC分类号： C23C16/00

CPC分类号： C23C16/45531 ,  C23C16/403 ,  C23C16/45527 ,  C23C16/45561

摘要： A layer deposition method includes: feeding a reactant with a first flow of an inert gas as a carrier gas into a reaction chamber to chemisorb the reactant on a substrate; feeding the first flow of the inert gas to purge the reaction chamber and a first reactant feed line; and feeding the second flow of the inert gas into the reaction chamber through a feed line different from the first reactant feed line.

摘要翻译： 层沉积方法包括：将具有作为载气的惰性气体的第一流的反应物进料到反应室中以化学吸附基材上的反应物; 供给惰性气体的第一流以吹扫反应室和第一反应物进料管线; 以及通过不同于第一反应物进料管线的进料管线将惰性气体的第二流量进料到反应室中。

公开(公告)号：US07201807B2

公开(公告)日：2007-04-10

申请号：US10734479

申请日：2003-12-12

申请人： Eun-Taek Yim ,  Young-Wook Park ,  In-Sung Park ,  Han-Mei Choi ,  Kyoung-Seok Kim

发明人： Eun-Taek Yim ,  Young-Wook Park ,  In-Sung Park ,  Han-Mei Choi ,  Kyoung-Seok Kim

IPC分类号： B08B5/00 ,  B08B9/093

CPC分类号： C23C16/4405 ,  B08B7/00 ,  B08B7/0035 ,  H01J37/32862 ,  H01L21/3162 ,  Y10S438/905

摘要： Disclosed are a method for cleaning a deposition chamber by removing attached metal oxides, and a deposition apparatus for performing in situ cleaning. A first gas and a second gas are provided into the deposition chamber. The first gas is reacted with metal included in the metal oxide to generate reacting residues. The second gas then decomposes the reacting residues, and the decomposed residues are exhausted out of the chamber. Thus, this cleaning process can be rapidly accomplished while the deposition chamber is not opened or separated from a deposition apparatus.

摘要翻译： 公开了通过去除附着的金属氧化物来清洁沉积室的方法，以及用于进行原位清洁的沉积装置。 第一气体和第二气体被提供到沉积室中。 第一种气体与包含在金属氧化物中的金属反应以产生反应残余物。 然后第二气体分解反应残余物，并将分解的残余物排出室外。 因此，当沉积室不从沉积设备打开或分离时，可以快速实现该清洁过程。

公开(公告)号：US06989338B2

公开(公告)日：2006-01-24

申请号：US10737394

申请日：2003-12-15

申请人： Han-Mei Choi ,  Young-Wook Park ,  Eun-Taek Yim ,  Dong-Jo Kang ,  Kyoung-Seok Kim

发明人： Han-Mei Choi ,  Young-Wook Park ,  Eun-Taek Yim ,  Dong-Jo Kang ,  Kyoung-Seok Kim

IPC分类号： H01L21/26

CPC分类号： H01L21/28194 ,  H01L29/513 ,  H01L29/517

摘要： Disclosed is a method for forming a multi-layered structure having at least two films on a semiconductor substrate. The substrate is disposed on a thermally conductible stage for supporting the substrate. After the distance between the stage and the substrate is adjusted to a first interval so that the substrate has a first temperature by heat transferred from the stage, a first thin film is formed on the substrate at the first temperature. The distance is then adjusted from the first interval to a second interval so that the substrate reaches a second temperature, and then a second thin film is formed on the first thin film at the second temperature, thereby forming the multi-layered structure on the substrate. The multi-layered structure can be employed for a gate insulation film or the dielectric film of a capacitor.

摘要翻译： 公开了一种在半导体衬底上形成至少具有两个膜的多层结构的方法。 基板设置在用于支撑基板的导热性台上。 在阶段和衬底之间的距离被调整到第一间隔，使得衬底具有通过从载物台传递的热量的第一温度，在第一温度下在衬底上形成第一薄膜。 然后将距离从第一间隔调整到第二间隔，使得衬底达到第二温度，然后在第二温度下在第一薄膜上形成第二薄膜，从而在衬底上形成多层结构 。 多层结构可以用于栅极绝缘膜或电容器的电介质膜。