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    Nonvolatile semiconductor device including a floating gate, method of manufacturing the same and associated systems
    1.
    发明授权
    Nonvolatile semiconductor device including a floating gate, method of manufacturing the same and associated systems 失效
    包括浮动栅极的非易失性半导体器件，其制造方法和相关系统

    公开(公告)号：US07902024B2

    公开(公告)日：2011-03-08

    申请号：US11896982

    申请日：2007-09-07

    申请人： Se-Hoon Lee ,  Donghoon Jang ,  Jong Jin Lee ,  Jeong-Dong Choe

    发明人： Se-Hoon Lee ,  Donghoon Jang ,  Jong Jin Lee ,  Jeong-Dong Choe

    IPC分类号： H01L21/336

    CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L29/66825 ,  H01L29/7881

    摘要： A memory device includes a first floating gate electrode on a substrate between adjacent isolation layers in the substrate, at least a portion of the first floating gate protruding above a portion of the adjacent isolation layers, a second floating gate electrode, electrically connected to the first floating gate electrode, on at least one of the adjacent isolation layers, a dielectric layer over the first and second floating gate electrodes, and a control gate over the dielectric layer and the first and second floating gate electrodes.

    摘要翻译： 存储器件包括在衬底中相邻隔离层之间的衬底上的第一浮置栅电极，第一浮置栅极的至少一部分突出在相邻隔离层的一部分上方，第二浮栅电极电连接到第一浮栅 浮栅电极，在至少一个相邻的隔离层上，第一和第二浮置栅电极之上的电介质层，以及介电层上的控制栅极以及第一和第二浮栅电极。

    Nonvolatile semiconductor device including a floating gate, method of manufacturing the same and associated systems
    2.
    发明申请
    Nonvolatile semiconductor device including a floating gate, method of manufacturing the same and associated systems 失效
    包括浮动栅极的非易失性半导体器件，其制造方法和相关系统

    公开(公告)号：US20080265304A1

    公开(公告)日：2008-10-30

    申请号：US11896982

    申请日：2007-09-07

    申请人： Se-Hoon Lee ,  Donghoon Jang ,  Jong Jin Lee ,  Jeong-Dong Choe

    发明人： Se-Hoon Lee ,  Donghoon Jang ,  Jong Jin Lee ,  Jeong-Dong Choe

    IPC分类号： H01L29/788 ,  H01L21/336

    CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L29/66825 ,  H01L29/7881

    摘要： A memory device includes a first floating gate electrode on a substrate between adjacent isolation layers in the substrate, at least a portion of the first floating gate protruding above a portion of the adjacent isolation layers, a second floating gate electrode, electrically connected to the first floating gate electrode, on at least one of the adjacent isolation layers, a dielectric layer over the first and second floating gate electrodes, and a control gate over the dielectric layer and the first and second floating gate electrodes.

    摘要翻译： 存储器件包括在衬底中相邻隔离层之间的衬底上的第一浮置栅电极，第一浮置栅极的至少一部分突出在相邻隔离层的一部分上方，第二浮栅电极电连接到第一浮栅 浮栅电极，在至少一个相邻的隔离层上，第一和第二浮置栅电极之上的电介质层，以及介电层上的控制栅极以及第一和第二浮栅电极。

    NONVOLATILE SEMICONDUCTOR DEVICE INCLUDING A FLOATING GATE AND ASSOCIATED SYSTEMS
    3.
    发明申请
    NONVOLATILE SEMICONDUCTOR DEVICE INCLUDING A FLOATING GATE AND ASSOCIATED SYSTEMS 有权
    非挥发性半导体器件，包括浮动门和相关系统

    公开(公告)号：US20110156125A1

    公开(公告)日：2011-06-30

    申请号：US13040380

    申请日：2011-03-04

    申请人： Se-Hoon LEE ,  Donghoon Jang ,  Jong Jin Lee ,  Jeong-Dong Choe

    发明人： Se-Hoon LEE ,  Donghoon Jang ,  Jong Jin Lee ,  Jeong-Dong Choe

    IPC分类号： H01L29/788

    CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L29/66825 ,  H01L29/7881

    摘要： A memory device includes a first floating gate electrode on a substrate between adjacent isolation layers in the substrate, at least a portion of the first floating gate protruding above a portion of the adjacent isolation layers, a second floating gate electrode, electrically connected to the first floating gate electrode, on at least one of the adjacent isolation layers, a dielectric layer over the first and second floating gate electrodes, and a control gate over the dielectric layer and the first and second floating gate electrodes.

    摘要翻译： 存储器件包括在衬底中相邻隔离层之间的衬底上的第一浮置栅电极，第一浮置栅极的至少一部分突出在相邻隔离层的一部分上方，第二浮栅电极电连接到第一浮栅 浮栅电极，在至少一个相邻的隔离层上，第一和第二浮置栅电极之上的电介质层，以及介电层上的控制栅极以及第一和第二浮栅电极。

    Nonvolatile semiconductor device including a floating gate and associated systems
    4.
    发明授权
    Nonvolatile semiconductor device including a floating gate and associated systems 有权
    包括浮动栅极和相关系统的非易失性半导体器件

    公开(公告)号：US08330205B2

    公开(公告)日：2012-12-11

    申请号：US13040380

    申请日：2011-03-04

    申请人： Se-Hoon Lee ,  Donghoon Jang ,  Jong Jin Lee ,  Jeong-Dong Choe

    发明人： Se-Hoon Lee ,  Donghoon Jang ,  Jong Jin Lee ,  Jeong-Dong Choe

    IPC分类号： H01L29/788

    CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L29/66825 ,  H01L29/7881

    摘要： A memory device includes a first floating gate electrode on a substrate between adjacent isolation layers in the substrate, at least a portion of the first floating gate protruding above a portion of the adjacent isolation layers, a second floating gate electrode, electrically connected to the first floating gate electrode, on at least one of the adjacent isolation layers, a dielectric layer over the first and second floating gate electrodes, and a control gate over the dielectric layer and the first and second floating gate electrodes.

    摘要翻译： 存储器件包括在衬底中相邻隔离层之间的衬底上的第一浮置栅电极，第一浮置栅极的至少一部分突出在相邻隔离层的一部分上方，第二浮栅电极电连接到第一浮栅 浮栅电极，在至少一个相邻的隔离层上，第一和第二浮置栅电极之上的电介质层，以及介电层上的控制栅极以及第一和第二浮栅电极。